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1.发明申请公开(公告)号：US20080050675A1
公开(公告)日：2008-02-28
申请号：US11844591
申请日：2007-08-24
IPC分类号： G03C1/00
CPC分类号： G03F7/0048 , G03F7/0046 , G03F7/0392
摘要： A positive resist composition comprising: (A) a resin having a repeating unit represented by a specific formula (I) and a repeating unit represented by a specific formula (A1); (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (F) a surfactant represented by a specific formula (II); and a pattern forming method using the same.
摘要翻译： 正型抗蚀剂组合物，其包含：（A）具有由特定式（I）表示的重复单元的树脂和由特定式（A1）表示的重复单元; （B）能够在用光化射线或辐射照射时能产生酸的化合物; 和（F）由特定式（II）表示的表面活性剂; 以及使用该图案形成方法的图案形成方法。
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2.发明申请公开(公告)号：US20070218407A1
公开(公告)日：2007-09-20
申请号：US11717645
申请日：2007-03-14
IPC分类号： G03C1/00
CPC分类号： G03F7/0397 , Y10S430/108 , Y10S430/111
摘要： A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation: wherein AR represents a benzene ring or a naphthalene ring; R represents a hydrogen atom, an alkyl group, a cycloalkyl group or an aryl group; Z represents a linking group for forming a ring together with AR; and A represents an atom or group selected from the group consisting of a hydrogen atom, an alkyl group, a halogen atom, a cyano group and an alkyloxycarbonyl group, and a pattern forming method using the resist composition.
摘要翻译： 一种抗蚀剂组合物，其包含：（A）含有由式（I）表示的重复单元的树脂; 和（B）能够在用光化射线或辐射照射时能产生酸的化合物：其中AR表示苯环或萘环; R表示氢原子，烷基，环烷基或芳基; Z表示与AR一起形成环的连接基团; A表示选自氢原子，烷基，卤素原子，氰基和烷氧基羰基的原子或基团，以及使用该抗蚀剂组合物的图案形成方法。
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3.发明授权公开(公告)号：US07887988B2
公开(公告)日：2011-02-15
申请号：US11717645
申请日：2007-03-14
CPC分类号： G03F7/0397 , Y10S430/108 , Y10S430/111
摘要： A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation: wherein AR represents a benzene ring or a naphthalene ring; R represents a hydrogen atom, an alkyl group, a cycloalkyl group or an aryl group; Z represents a linking group for forming a ring together with AR; and A represents an atom or group selected from the group consisting of a hydrogen atom, an alkyl group, a halogen atom, a cyano group and an alkyloxycarbonyl group, and a pattern forming method using the resist composition.
摘要翻译： 一种抗蚀剂组合物，其包含：（A）含有由式（I）表示的重复单元的树脂; 和（B）能够在用光化射线或辐射照射时能产生酸的化合物：其中AR表示苯环或萘环; R表示氢原子，烷基，环烷基或芳基; Z表示与AR一起形成环的连接基团; A表示选自氢原子，烷基，卤素原子，氰基和烷氧基羰基的原子或基团，以及使用该抗蚀剂组合物的图案形成方法。
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4.发明申请公开(公告)号：US20070218406A1
公开(公告)日：2007-09-20
申请号：US11717618
申请日：2007-03-14
IPC分类号： G03C1/00
CPC分类号： G03F7/0392 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation: wherein AR represents an aryl group; Rn represents an alkyl group, a cycloalkyl group or an aryl group; and A represents an atom or group selected from the group consisting of a hydrogen atom, an alkyl group, a halogen atom, a cyano group and an alkyloxycarbonyl group, and a pattern forming method using the resist composition.
摘要翻译： 一种抗蚀剂组合物，其包含：（A）含有由式（I）表示的重复单元的树脂; 和（B）能够在用光化射线或辐射照射时能够产生酸的化合物：其中AR表示芳基; Rn表示烷基，环烷基或芳基; A表示选自氢原子，烷基，卤素原子，氰基和烷氧基羰基的原子或基团，以及使用该抗蚀剂组合物的图案形成方法。
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5.发明授权公开(公告)号：US07625690B2
公开(公告)日：2009-12-01
申请号：US11717618
申请日：2007-03-14
CPC分类号： G03F7/0392 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation: wherein AR represents an aryl group; Rn represents an alkyl group, a cycloalkyl group or an aryl group; and A represents an atom or group selected from the group consisting of a hydrogen atom, an alkyl group, a halogen atom, a cyano group and an alkyloxycarbonyl group, and a pattern forming method using the resist composition.
摘要翻译： 一种抗蚀剂组合物，其包含：（A）含有由式（I）表示的重复单元的树脂; 和（B）能够在用光化射线或辐射照射时能够产生酸的化合物：其中AR表示芳基; Rn表示烷基，环烷基或芳基; A表示选自氢原子，烷基，卤素原子，氰基和烷氧基羰基的原子或基团，以及使用该抗蚀剂组合物的图案形成方法。
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公开(公告)号：US08785104B2
公开(公告)日：2014-07-22
申请号：US12921354
申请日：2009-03-13
CPC分类号： G03F7/0045 , C08F8/12 , C08F12/24 , C09D125/14 , G03F7/0046 , G03F7/0392 , G03F7/0397 , C08F212/14 , C08F2220/1825
摘要： A resist composition and a pattern forming method using the composition are provided, the resist composition including: (A) a resin that decomposes by an action of an acid to increase a solubility of the resin (A) in an alkali developer; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a compound represented by formula (C1); and (D) a solvent: wherein n represents an integer of 1 to 6; w represents an integer of 1 to 6; p represents an integer of 1 to 6; m represents an integer of 1 to 6; Ra, Rb, Rc and Rd each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group, provided that Ra and Rb may combine together to form a ring, and Rc and Rd may combine together to form a ring.
摘要翻译： 提供了使用该组合物的抗蚀剂组合物和图案形成方法，该抗蚀剂组合物包括：（A）通过酸的作用分解以提高树脂（A）在碱性显影剂中的溶解度的树脂; （B）能够在用光化射线或辐射照射时能够产生酸的化合物; （C）由式（C1）表示的化合物; 和（D）溶剂：其中n表示1至6的整数; w表示1〜6的整数， p表示1〜6的整数， m表示1〜6的整数， Ra，Rb，Rc和Rd各自独立地表示氢原子，烷基，环烷基，芳基或芳烷基，条件是Ra和Rb可以结合在一起形成环，Rc和Rd可以结合在一起 形成一个戒指。
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7.发明授权Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method 有权图案形成方法，图案形成方法中使用的抗蚀剂组合物，图案形成方法中使用的负显影液和用于图案形成方法的负显影用漂洗溶液公开(公告)号：US08034547B2
公开(公告)日：2011-10-11
申请号：US12145151
申请日：2008-06-24
IPC分类号： G03F7/30
CPC分类号： G03F7/0397 , G03F7/325 , Y10S430/106 , Y10S430/111
摘要： A pattern forming method includes (a) coating a substrate with a resist composition including a resin that includes a repeating unit represented by a following general formula (NGH-1), and, by the action of an acid, increases the polarity and decreases the solubility in a negative developing solution; (b) exposing; and (d) developing with a negative developing solution: wherein RNGH1 represents a hydrogen atom or an alkyl group; and RNGH2 to RNGH4 each independently represents a hydrogen atom or a hydroxyl group, provided that at least one of RNGH2 to RNGH4 represents a hydroxyl group.
摘要翻译： 图案形成方法包括：（a）用包含由以下通式（NGH-1）表示的重复单元的树脂的抗蚀剂组合物涂布基材，并且通过酸的作用增加极性，并降低 在负显影液中的溶解度; （b）曝光; 和（d）用负显影液显影：其中RNGH1表示氢原子或烷基; 并且RNGH 2至RNGH 4各自独立地表示氢原子或羟基，条件是RNGH 2至RNGH 4中的至少一个表示羟基。
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8.发明授权公开(公告)号：US07923196B2
公开(公告)日：2011-04-12
申请号：US12672329
申请日：2008-08-01
CPC分类号： G03F7/0397 , C08F8/12 , C08F12/22 , C08F12/24 , C08F212/14 , C08F2800/10 , G03F7/0045 , G03F7/0392 , Y10S430/114 , Y10S430/146 , C08F220/18 , C08F2220/1825 , C08F220/14
摘要： A positive resist composition comprising (A) a resin which contains all of the repeating units represented by formulae (I) to (III), and becomes soluble in an alkali developer by the action of an acid, and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and a pattern forming method using the composition. A represents a group capable of decomposing and leaving by the action of an acid, each R1 independently represents hydrogen or a methyl group, R2 represents a phenyl group or a cyclohexyl group, m represents 1 or 2, and n represents an integer of 0 to 2. By virtue of this construction, a resist composition ensuring high resolution, good pattern profile, sufficient depth of focus, little defects after development, and sufficiently high plasma etching resistance is provided.
摘要翻译： 一种正型抗蚀剂组合物，其包含（A）含有由式（I）至（III）表示的所有重复单元的树脂，并且通过酸的作用变得可溶于碱性显影剂，和（B）能够 在用光化射线或辐射照射时产生酸; 以及使用该组合物的图案形成方法。 A表示能够通过酸的分解和离去的基团，每个R 1独立地表示氢或甲基，R 2表示苯基或环己基，m表示1或2，n表示0〜 通过这种结构，提供了确保高分辨率，良好的图案轮廓，足够的焦深，显影后的小缺陷以及足够高的耐等离子体耐蚀刻性的抗蚀剂组合物。
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9.发明授权公开(公告)号：US07250246B2
公开(公告)日：2007-07-31
申请号：US11041384
申请日：2005-01-25
申请人： Kazuyoshi Mizutani
发明人： Kazuyoshi Mizutani
CPC分类号： G03F7/0392 , G03F7/0397 , Y10S430/111
摘要： A positive resist composition which can be suitably used in an ultramicrolithography process such as production of VLSI or high-capacity microchip and in other photofabrication processes and can ensure good sensitivity, resolution, pattern profile and line edge roughness when irradiated with actinic rays or radiation, particularly, electron beam, X-ray or EUV; and a pattern formation method using the composition, are provided, the positive resist composition comprising (A) a resin comprising a specific acryl-based repeating unit and a specific styrene-based repeating unit, which increases the dissolution rate in an alkali developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and (C) a solvent; and a pattern formation method using the composition.
摘要翻译： 正极抗蚀剂组合物可以适用于超微光刻工艺如VLSI或大容量微芯片的生产和其它光制造工艺中，并且当用光化射线或辐射照射时可以确保良好的灵敏度，分辨率，图案轮廓和线边缘粗糙度， 特别是电子束，X射线或EUV; 和使用该组合物的图案形成方法，正型抗蚀剂组合物包含（A）包含特定的丙烯酸类重复单元和特定苯乙烯基重复单元的树脂，其增加碱显影剂中的溶解速率 酸的作用，（B）在用光化射线或辐射照射时能够产生酸的化合物，和（C）溶剂; 以及使用该组合物的图案形成方法。
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公开(公告)号：US07217493B2
公开(公告)日：2007-05-15
申请号：US10840624
申请日：2004-05-07
CPC分类号： G03F7/0757 , G03F7/0392 , Y10S430/106 , Y10S430/115
摘要： A positive resist composition comprising (A) polysiloxane or polysilsesquioxane that has a property of increasing solubility in an alkali developing solution by the action of an acid and contains a group capable of being decomposed with an acid, (B) a compound that generates a sulfonic acid upon irradiation of an actinic ray or radiation and (C) an organic basic compound, wherein an amount of the compound that generates a sulfonic acid upon irradiation of an actinic ray or radiation is from 6 to 20% by weight based on the total solid content of the positive resist composition.
摘要翻译： 一种正型抗蚀剂组合物，其包含（A）聚硅氧烷或聚倍半硅氧烷，其具有通过酸的作用增加在碱性显影液中的溶解度的性质，并且含有能够被酸分解的基团，（B）产生磺酸的化合物 通过光化射线或辐射照射时的酸和（C）有机碱性化合物，其中在光化学射线或辐射照射时产生磺酸的化合物的量为基于总固体的6至20重量％ 正性抗蚀剂组合物的含量。
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