公开(公告)号：US09053834B2

公开(公告)日：2015-06-09

申请号：US13194621

申请日：2011-07-29

申请人： Fusao Hirose ,  Jun Kojima ,  Kazutoshi Kojima ,  Tomohisa Kato ,  Ayumu Adachi ,  Koichi Nishikawa

发明人： Fusao Hirose ,  Jun Kojima ,  Kazutoshi Kojima ,  Tomohisa Kato ,  Ayumu Adachi ,  Koichi Nishikawa

IPC分类号： H01B1/04 ,  C30B31/00 ,  C30B29/36 ,  C30B23/02 ,  C30B23/00

CPC分类号： H01B1/04 ,  C30B23/00 ,  C30B23/02 ,  C30B29/36 ,  C30B31/00

摘要： A silicon carbide single crystal includes nitrogen as a dopant and aluminum as a dopant. A nitrogen concentration is 2×1019 cm−3 or higher and a ratio of an aluminum concentration to the nitrogen concentration is within a range of 5% to 40%.

摘要翻译： 碳化硅单晶包括氮作为掺杂剂和铝作为掺杂剂。 氮浓度为2×10 19 cm -3以上，铝浓度与氮浓度的比例在5％〜40％的范围内。

公开(公告)号：US20120025153A1

公开(公告)日：2012-02-02

申请号：US13194621

申请日：2011-07-29

申请人： Fusao Hirose ,  Jun Kojima ,  Kazutoshi Kojima ,  Tomohisa Kato ,  Ayumu Adachi ,  Koichi Nishikawa

发明人： Fusao Hirose ,  Jun Kojima ,  Kazutoshi Kojima ,  Tomohisa Kato ,  Ayumu Adachi ,  Koichi Nishikawa

IPC分类号： H01B1/04 ,  C30B23/02

CPC分类号： H01B1/04 ,  C30B23/00 ,  C30B23/02 ,  C30B29/36 ,  C30B31/00

摘要： A silicon carbide single crystal includes nitrogen as a dopant and aluminum as a dopant. A nitrogen concentration is 2×1019 cm−3 or higher and a ratio of an aluminum concentration to the nitrogen concentration is within a range of 5% to 40%.

摘要翻译： 碳化硅单晶包括氮作为掺杂剂和铝作为掺杂剂。 氮浓度为2×10 19 cm -3以上，铝浓度与氮浓度的比例在5％〜40％的范围内。

公开(公告)号：US20070001175A1

公开(公告)日：2007-01-04

申请号：US10567729

申请日：2004-08-19

申请人： Kazutoshi Kojima ,  Satoshi Kuroda ,  Hajime Okumura

发明人： Kazutoshi Kojima ,  Satoshi Kuroda ,  Hajime Okumura

IPC分类号： H01L31/0312

CPC分类号： H01L29/1608 ,  C30B25/02 ,  C30B25/20 ,  C30B29/36 ,  H01L21/0445 ,  H01L29/045 ,  Y10S438/931

摘要： Provided is a silicon carbide epitaxial wafer which is formed on a substrate that is less than 1° off from the {0001} surface of silicon carbide having an α-type crystal structure, wherein the crystal defects in the SiC epitaxial wafer are reduced while the flatness of the surface thereof is improved.

摘要翻译： 提供了一种碳化硅外延晶片，其形成在与具有α型晶体结构的碳化硅的{0001}表面小于1°的基板上，其中SiC外延晶片中的晶体缺陷减小， 表面的平坦度提高。

公开(公告)号：US20050077591A1

公开(公告)日：2005-04-14

申请号：US10928269

申请日：2004-08-30

申请人： Kenji Fukuda ,  Ryouji Kosugi ,  Shinsuke Harada ,  Junji Senzaki ,  Kazutoshi Kojima ,  Satoshi Kuroda

发明人： Kenji Fukuda ,  Ryouji Kosugi ,  Shinsuke Harada ,  Junji Senzaki ,  Kazutoshi Kojima ,  Satoshi Kuroda

IPC分类号： H01L21/28 ,  H01L21/04 ,  H01L21/329 ,  H01L29/04 ,  H01L29/12 ,  H01L29/24 ,  H01L29/47 ,  H01L29/78 ,  H01L29/80 ,  H01L29/812 ,  H01L29/861 ,  H01L29/872 ,  H01L29/15

CPC分类号： H01L29/1608 ,  H01L29/045 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7801 ,  H01L29/7827 ,  H01L29/7835 ,  H01L29/812 ,  H01L29/8611 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device formed on a silicon carbide semiconductor substrate comprises an epitaxial layer formed on a surface sloping (or inclining) by 0 to less than 1 degree from a (000-1) face of the silicon carbide semiconductor substrate, wherein at least one of a P type semiconductor area or an N type semiconductor area is selectively formed in the epitaxial layer by ion implantation, a metal electrode is formed so as to contact a surface layer of the P type semiconductor area or the N type semiconductor area, a rectification function is shown between the metal electrode and the P type semiconductor area or the N type semiconductor area, and the semiconductor device is formed on the silicon carbide semiconductor substrate of a Schottky barrier diode or a PN type diode.

摘要翻译： 形成在碳化硅半导体衬底上的半导体器件包括形成在从碳化硅半导体衬底的（000-1）面倾斜（或倾斜）0至小于1度的表面上的外延层，其中至少一个 通过离子注入在外延层中选择性地形成P型半导体区域或N型半导体区域，形成与P型半导体区域或N型半导体区域的表面层接触的金属电极，整流功能 示出在金属电极和P型半导体区域或N型半导体区域之间，并且半导体器件形成在肖特基势垒二极管或PN型二极管的碳化硅半导体衬底上。

公开(公告)号：US08293623B2

公开(公告)日：2012-10-23

申请号：US12677255

申请日：2008-09-12

申请人： Kenji Momose ,  Michiya Odawara ,  Keiichi Matsuzawa ,  Hajime Okumura ,  Kazutoshi Kojima ,  Yuuki Ishida ,  Hidekazu Tsuchida ,  Isaho Kamata

发明人： Kenji Momose ,  Michiya Odawara ,  Keiichi Matsuzawa ,  Hajime Okumura ,  Kazutoshi Kojima ,  Yuuki Ishida ,  Hidekazu Tsuchida ,  Isaho Kamata

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： C23C16/46 ,  C23C16/325 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/0262

摘要： An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cm2 or less.

摘要翻译： 外延SiC单晶衬底，其包括主表面为c面的SiC单晶晶片或倾斜角度大于0度但小于10度的c面倾斜的表面;以及SiC外延膜 其形成在SiC单晶晶片的主表面上，其中形成在SiC外延膜中的穿线边缘位错阵列的位错阵列密度为10阵列/ cm 2以下。

公开(公告)号：US07265388B2

公开(公告)日：2007-09-04

申请号：US10928269

申请日：2004-08-30

申请人： Kenji Fukuda ,  Ryouji Kosugi ,  Shinsuke Harada ,  Junji Senzaki ,  Kazutoshi Kojima ,  Satoshi Kuroda

发明人： Kenji Fukuda ,  Ryouji Kosugi ,  Shinsuke Harada ,  Junji Senzaki ,  Kazutoshi Kojima ,  Satoshi Kuroda

IPC分类号： H01L29/15

CPC分类号： H01L29/1608 ,  H01L29/045 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7801 ,  H01L29/7827 ,  H01L29/7835 ,  H01L29/812 ,  H01L29/8611 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device formed on a silicon carbide semiconductor substrate comprises an epitaxial layer formed on a surface sloping (or inclining) by 0 to less than 1 degree from a (000-1) face of the silicon carbide semiconductor substrate, wherein at least one of a P type semiconductor area or an N type semiconductor area is selectively formed in the epitaxial layer by ion implantation, a metal electrode is formed so as to contact a surface layer of the P type semiconductor area or the N type semiconductor area, a rectification function is shown between the metal electrode and the P type semiconductor area or the N type semiconductor area, and the semiconductor device is formed on the silicon carbide semiconductor substrate of a Schottky barrier diode or a PN type diode.

摘要翻译： 形成在碳化硅半导体衬底上的半导体器件包括形成在从碳化硅半导体衬底的（000-1）面倾斜（或倾斜）0至小于1度的表面上的外延层，其中至少一个 通过离子注入在外延层中选择性地形成P型半导体区域或N型半导体区域，形成与P型半导体区域或N型半导体区域的表面层接触的金属电极，整流功能 示出在金属电极和P型半导体区域或N型半导体区域之间，并且半导体器件形成在肖特基势垒二极管或PN型二极管的碳化硅半导体衬底上。

公开(公告)号：US07635868B2

公开(公告)日：2009-12-22

申请号：US10567729

申请日：2004-08-19

申请人： Kazutoshi Kojima ,  Satoshi Kuroda ,  Hajime Okumura

发明人： Kazutoshi Kojima ,  Satoshi Kuroda ,  Hajime Okumura

IPC分类号： H01L31/0312

CPC分类号： H01L29/1608 ,  C30B25/02 ,  C30B25/20 ,  C30B29/36 ,  H01L21/0445 ,  H01L29/045 ,  Y10S438/931

摘要： Provided is a silicon carbide epitaxial wafer which is formed on a substrate that is less than 1° off from the {0001} surface of silicon carbide having an α-type crystal structure, wherein the crystal defects in the SiC epitaxial wafer are reduced while the flatness of the surface thereof is improved.

摘要翻译： 提供了一种碳化硅外延晶片，其形成在与具有α型晶体结构的碳化硅的{0001}表面小于1°的基板上，其中SiC外延晶片中的晶体缺陷减小， 表面的平坦度提高。

公开(公告)号：US08716718B2

公开(公告)日：2014-05-06

申请号：US13617596

申请日：2012-09-14

申请人： Kenji Momose ,  Michiya Odawara ,  Keiichi Matsuzawa ,  Hajime Okumura ,  Kazutoshi Kojima ,  Yuuki Ishida ,  Hidekazu Tsuchida ,  Isaho Kamata

发明人： Kenji Momose ,  Michiya Odawara ,  Keiichi Matsuzawa ,  Hajime Okumura ,  Kazutoshi Kojima ,  Yuuki Ishida ,  Hidekazu Tsuchida ,  Isaho Kamata

IPC分类号： H01L29/15 ,  H01L31/0312

CPC分类号： C23C16/46 ,  C23C16/325 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/0262

摘要： An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cm2 or less.

摘要翻译： 外延SiC单晶衬底，其包括主表面为c面的SiC单晶晶片或倾斜角度大于0度但小于10度的c面倾斜的表面;以及SiC外延膜 其形成在SiC单晶晶片的主表面上，其中形成在SiC外延膜中的穿线边缘位错阵列的位错阵列密度为10阵列/ cm 2以下。

公开(公告)号：US20110006309A1

公开(公告)日：2011-01-13

申请号：US12677255

申请日：2008-09-12

申请人： Kenji Momose ,  Michiya Odawara ,  Keiichi Matsuzawa ,  Hajime Okumura ,  Kazutoshi Kojima ,  Yuuki Ishida ,  Hidekazu Tsuchida ,  Isaho Kamata

发明人： Kenji Momose ,  Michiya Odawara ,  Keiichi Matsuzawa ,  Hajime Okumura ,  Kazutoshi Kojima ,  Yuuki Ishida ,  Hidekazu Tsuchida ,  Isaho Kamata

IPC分类号： H01L29/24 ,  H01L21/20

CPC分类号： C23C16/46 ,  C23C16/325 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/0262

摘要： An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cm2 or less.

摘要翻译： 外延SiC单晶衬底，其包括主表面为c面的SiC单晶晶片或倾斜角度大于0度但小于10度的c面倾斜的表面;以及SiC外延膜 其形成在SiC单晶晶片的主表面上，其中形成在SiC外延膜中的穿线边缘位错阵列的位错阵列密度为10阵列/ cm 2以下。