公开(公告)号：US20190109197A1

公开(公告)日：2019-04-11

申请号：US15728070

申请日：2017-10-09

Applicant: GLOBALFOUNDRIES INC.

Inventor： Haiting WANG ,  Wei ZHAO ,  Hui ZANG ,  Hong YU ,  Zhenyu HU ,  Scott BEASOR ,  Erik GEISS ,  Jerome CIAVATTI ,  Jae Gon LEE

IPC: H01L29/417 ,  H01L27/11 ,  H01L27/088 ,  H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/8234

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to scaled memory structures with middle of the line cuts and methods of manufacture The structure comprises: a plurality of fin structures formed on a substrate; a plurality of gate structures spanning over adjacent fin structures; a cut in adjacent epitaxial source/drain regions; and a cut in contact material formed adjacent to the plurality of gate structures, which provides separate contacts.

公开(公告)号：US20210066464A1

公开(公告)日：2021-03-04

申请号：US17097419

申请日：2020-11-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hui ZANG ,  Ruilong XIE ,  Jae Gon LEE

IPC: H01L29/417 ,  H01L29/08 ,  H01L29/51 ,  H01L29/78 ,  H01L21/768 ,  H01L29/66 ,  H01L23/528 ,  H01L23/522

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a scaled gate contact and source/drain cap and methods of manufacture. The structure includes: a gate structure comprising an active region; source and drain contacts adjacent to the gate structure; a capping material over the source and drain contacts; a gate contact formed directly above the active region of the gate structure and over the capping material; a U-shape dielectric material around the gate contact, above the source and drain contacts; and a contact in direct electrical contact to the source and drain contacts.