公开(公告)号：US09348228B2

公开(公告)日：2016-05-24

申请号：US13733182

申请日：2013-01-03

Applicant: GLOBALFOUNDRIES INC.

Inventor： Martin Glodde ,  Wu-Song Huang ,  Ratnam Sooriyakumaran

IPC: G03F7/09 ,  G03F7/075 ,  G02B1/111 ,  G02B1/11

CPC classification number: G03F7/091 ,  G02B1/11 ,  G02B1/111 ,  G03F7/0752 ,  G03F7/0755

Abstract: A silicon-containing antireflective coating formulation comprising: (i) an aqueous base insoluble organosilicon component having a multiplicity of hydrocarbon groups derivatized with hydroxy groups in the absence of Si—O—C and Si—O—H moieties; (ii) a vinylether component having a multiplicity of vinylether groups; and (iii) a casting solvent. Also disclosed is a method for converting the silicon-containing antireflective coating formulation into a crosslinked silicon-containing antireflective film comprising organosilicon units interconnected by acetal or ketal groups. The method entails (a) coating a substrate with the silicon-containing antireflective coating formulation and (b) heating the coated substrate to a temperature at which crosslinking between the organosilicon silicon component and vinylether component occurs. Further disclosed is a method for patterning an antireflective coating on a substrate using the crosslinked silicon-containing antireflective film in a lithographic patterning process wherein the crosslinked silicon-containing antireflective film is situated between the substrate and a photoresist.

Abstract translation: 一种含硅抗反射涂层制剂，其包含：（i）在不存在Si-O-C和Si-O-H部分的情况下，具有多个用羟基衍生的烃基的不溶于碱的水溶性有机硅组分; （ii）具有多个乙烯基醚基团的乙烯基醚组分; 和（iii）铸塑溶剂。 还公开了一种将含硅抗反射涂料制剂转变为含有缩合缩醛交联的含硅抗反射薄膜的方法，该薄膜包含通过缩醛或缩酮基相互连接的有机硅单元。 该方法包括：（a）用含硅抗反射涂层制剂涂覆基材，和（b）将涂覆的基材加热至发生有机硅硅组分和乙烯基醚组分之间的交联的温度。 进一步公开的是一种在光刻图案化工艺中使用交联的含硅抗反射膜在基片上图案化抗反射涂层的方法，其中交联的含硅抗反射膜位于基底和光致抗蚀剂之间。

公开(公告)号：US09465290B2

公开(公告)日：2016-10-11

申请号：US14243238

申请日：2014-04-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： Wu-Song Huang ,  Martin Glodde ,  Dario L. Goldfarb ,  Wai-Kin Li ,  Sen Liu ,  Libor Vyklicky

IPC: C09D5/32 ,  C09D163/00 ,  C08K5/00 ,  G03F7/038 ,  G03F7/09 ,  G03F7/11 ,  H01L51/44

CPC classification number: G03F7/0388 ,  G03F7/038 ,  G03F7/091 ,  G03F7/11 ,  H01L51/447

Abstract: A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

Abstract translation: 一种可固化液体制剂，其包含：（i）一种或多种近红外吸收聚甲炔染料; （ii）一种或多种可交联聚合物; 和（iii）一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。

公开(公告)号：US09551696B2

公开(公告)日：2017-01-24

申请号：US14311380

申请日：2014-06-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Mark S. Chace ,  Martin Glodde ,  Margaret C. Lawson ,  Janine L. Protzman ,  Qin Yuan

IPC: B08B7/04 ,  G01N21/00 ,  G03F7/42 ,  G01N33/44 ,  G03F7/20 ,  B08B7/00

CPC classification number: G01N33/44 ,  B08B7/00 ,  B08B7/0035 ,  B08B7/04 ,  G01N1/44 ,  G03F7/70916

Abstract: A method of testing the cleanability of polymerized sublimate outgassed from a lithography material during a thermal heating process including; placing a wafer on a wafer hotplate inside a chamber with the wafer being covered by a lithography material; placing a target, having a starting composition, above the wafer in the chamber; heating the wafer using the wafer hotplate in an attempt to outgas a sublimate, where the sublimate condenses on the target; forming a polymerized sublimate on the target; and applying organic solvents to the target to determine the cleanability of the polymerized sublimate.

Abstract translation: 一种在热加热过程中测试从光刻材料脱气的聚合升华物的可清洁性的方法，包括： 将晶片放置在室内的晶片加热板上，晶片被光刻材料覆盖; 将具有起始组成的靶放置在所述腔中的所述晶片之上; 使用晶片加热板加热晶片以试图排出升华，其中升华在目标上冷凝; 在目标上形成聚合的升华; 并向目标物施加有机溶剂以确定聚合的升华物的可清洁性。

公开(公告)号：US09460934B2

公开(公告)日：2016-10-04

申请号：US13833317

申请日：2013-03-15

Applicant: GLOBALFOUNDRIES INC. ,  SHIN-ETSU Chemical Company, Ltd.

Inventor： Martin Glodde ,  Wu-Song Huang ,  Javier J. Perez ,  Takeshi Kinsho ,  Tsutomu Ogihara ,  Seiichiro Tachibana ,  Takeru Watanabe

IPC: H01L21/76 ,  H01L21/311 ,  H01L21/027 ,  G03F7/075 ,  G03F7/09

CPC classification number: H01L21/31111 ,  G03F7/0752 ,  G03F7/091 ,  H01L21/0276

Abstract: An silicon-containing antireflective coating (SiARC) material is applied on a substrate. The SiARC material which includes a base polymer and may include a boron silicate polymer including silsesquioxane. An etch sequence is utilized, which includes a first wet etch employing a basic solution, a second wet etch employing an acidic solution, and a third wet etch employing another basic solution. The first wet etch can be employed to break up the boron silicate polymer, and the second wet etch can remove the base polymer material, and the third wet etch can remove the residual boron silicate polymer and other residual materials. The SiARC material can be removed from a substrate employing the etch sequence, and the substrate can be reused for monitoring purposes.

Abstract translation: 将硅含抗反射涂层（SiARC）材料施加在基底上。 包括基础聚合物的SiARC材料可以包括含硅倍半硅氧烷的硼硅酸盐聚合物。 使用蚀刻序列，其包括使用碱性溶液的第一湿蚀刻，使用酸性溶液的第二湿蚀刻和使用另一种碱性溶液的第三湿蚀刻。 可以使用第一湿蚀刻来分解硼硅酸盐聚合物，并且第二湿蚀刻可以去除基础聚合物材料，并且第三湿蚀刻可以除去残留的硼硅酸盐聚合物和其它残留材料。 可以使用蚀刻顺序从衬底去除SiARC材料，并且可以将衬底重新用于监测目的。