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    Precision trench capacitor
    3.
    发明授权
    Precision trench capacitor 有权
    精密沟槽电容器

    公开(公告)号：US09240406B2

    公开(公告)日：2016-01-19

    申请号：US14257143

    申请日：2014-04-21

    Applicant: GLOBALFOUNDRIES INC.

    Inventor： Kai D. Feng ,  Dan Moy ,  Chengwen Pei ,  Robert R. Robison ,  Pinping Sun ,  Richard A. Wachnik ,  Ping-Chuan Wang

    IPC: H01L27/07 ,  H01L29/66 ,  H01L29/94

    CPC classification number: H01L27/0733 ,  H01L27/0629 ,  H01L27/0805 ,  H01L27/11206 ,  H01L29/66181 ,  H01L29/945

    Abstract: A capacitor structure can include a parallel connection of a plurality of trench capacitors. First nodes of the plurality of trench capacitors are electrically tied to provide a first node of the capacitor structure. Second nodes of the plurality of trench capacitors are electrically tied together through at least one programmable electrical connection at a second node of the capacitor structure. Each programmable electrical connection can include at least one of a programmable electrical fuse and a field effect transistor, and can disconnect a corresponding trench capacitor temporarily or permanently. The total capacitance of the capacitor structure can be tuned by programming, temporarily or permanently, the at least one programmable electrical connection.

    Abstract translation: 电容器结构可以包括多个沟槽电容器的并联连接。 电连接多个沟槽电容器的第一节点以提供电容器结构的第一节点。 多个沟槽电容器的第二节点通过电容器结构的第二节点处的至少一个可编程电连接电连接在一起。 每个可编程电气连接可以包括可编程电熔丝和场效应晶体管中的至少一个，并且可以临时或永久地断开相应的沟槽电容器。 可以通过暂时或永久地编程至少一个可编程电连接来调节电容器结构的总电容。

    Buried signal transmission line
    4.
    发明授权
    Buried signal transmission line 有权
    埋地信号传输线

    公开(公告)号：US09484246B2

    公开(公告)日：2016-11-01

    申请号：US14307604

    申请日：2014-06-18

    Applicant: GLOBALFOUNDRIES INC.

    Inventor： Anthony I. Chou ,  Arvind Kumar ,  Sungjae Lee ,  Richard A. Wachnik

    IPC: H01L21/20 ,  H01L21/762 ,  H01L21/84 ,  H01L21/74 ,  H01L27/12

    CPC classification number: H01L21/76283 ,  H01L21/743 ,  H01L21/84 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A buried conductive layer is formed underneath a buried insulator layer of a semiconductor-on-insulator (SOI) substrate. A deep isolation trench laterally surrounding a portion of the buried conductive layer is formed, and is filled with at least a dielectric liner to form a deep capacitor trench isolation structure. Contact via structures are formed through the buried insulator layer and a top semiconductor layer and onto the portion of the buried conductive layer, which constitutes a buried conductive conduit. The deep capacitor trench isolation structure may be formed concurrently with at least one deep trench capacitor. A patterned portion of the top semiconductor layer may be employed as an additional conductive conduit for signal transmission. Further, the deep capacitor trench isolation structure may include a conductive portion, which can be electrically biased to control the impedance of the signal path including the buried conductive conduit.

    Abstract translation: 在绝缘体上半导体（SOI）衬底的掩埋绝缘体层下方形成掩埋导电层。 形成横向围绕埋入导电层的一部分的深隔离沟槽，并且至少填充有介电衬垫以形成深电容器沟槽隔离结构。 通过结构的接触通过掩埋绝缘体层和顶部半导体层形成，并且形成在掩埋导电层的构成掩埋导电导管的部分上。 深电容器沟槽隔离结构可以与至少一个深沟槽电容器同时形成。 可以使用顶部半导体层的图案化部分作为用于信号传输的附加导电管道。 此外，深电容器沟槽隔离结构可以包括导电部分，导电部分可被电偏置以控制包括埋入导电导管的信号路径的阻抗。

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