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    Commonly-bodied field-effect transistors
    1.
    发明授权
    Commonly-bodied field-effect transistors 有权

    公开(公告)号：US09818652B1

    公开(公告)日：2017-11-14

    申请号：US15140025

    申请日：2016-04-27

    Applicant: GLOBALFOUNDRIES INC.

    Inventor： Chengwen Pei ,  Ping-Chuan Wang ,  Kai D. Feng

    IPC: H01L27/12 ,  H01L21/84 ,  H01L21/3065 ,  H01L21/28

    CPC classification number: H01L21/84 ,  H01L27/1203

    Abstract: Structures for a commonly-bodied field-effect transistors and methods of forming such structures. The structure includes a body of semiconductor material defined by a trench isolation region in a semiconductor substrate. The body includes a plurality of first sections, a plurality of second sections, and a third section, the second sections coupling the first sections and the third section. The third section includes a contact region used as a common-body contact for at least the first sections. The first sections and the third section have a first height and the second sections have a second height that is less than the first height.

    Precision trench capacitor
    2.
    发明授权
    Precision trench capacitor 有权
    精密沟槽电容器

    公开(公告)号：US09240406B2

    公开(公告)日：2016-01-19

    申请号：US14257143

    申请日：2014-04-21

    Applicant: GLOBALFOUNDRIES INC.

    Inventor： Kai D. Feng ,  Dan Moy ,  Chengwen Pei ,  Robert R. Robison ,  Pinping Sun ,  Richard A. Wachnik ,  Ping-Chuan Wang

    IPC: H01L27/07 ,  H01L29/66 ,  H01L29/94

    CPC classification number: H01L27/0733 ,  H01L27/0629 ,  H01L27/0805 ,  H01L27/11206 ,  H01L29/66181 ,  H01L29/945

    Abstract: A capacitor structure can include a parallel connection of a plurality of trench capacitors. First nodes of the plurality of trench capacitors are electrically tied to provide a first node of the capacitor structure. Second nodes of the plurality of trench capacitors are electrically tied together through at least one programmable electrical connection at a second node of the capacitor structure. Each programmable electrical connection can include at least one of a programmable electrical fuse and a field effect transistor, and can disconnect a corresponding trench capacitor temporarily or permanently. The total capacitance of the capacitor structure can be tuned by programming, temporarily or permanently, the at least one programmable electrical connection.

    Abstract translation: 电容器结构可以包括多个沟槽电容器的并联连接。 电连接多个沟槽电容器的第一节点以提供电容器结构的第一节点。 多个沟槽电容器的第二节点通过电容器结构的第二节点处的至少一个可编程电连接电连接在一起。 每个可编程电气连接可以包括可编程电熔丝和场效应晶体管中的至少一个，并且可以临时或永久地断开相应的沟槽电容器。 可以通过暂时或永久地编程至少一个可编程电连接来调节电容器结构的总电容。

    COMMONLY-BODIED FIELD-EFFECT TRANSISTORS
    4.
    发明申请
    COMMONLY-BODIED FIELD-EFFECT TRANSISTORS 有权

    公开(公告)号：US20170316986A1

    公开(公告)日：2017-11-02

    申请号：US15140025

    申请日：2016-04-27

    Applicant: GLOBALFOUNDRIES INC.

    Inventor： Chengwen Pei ,  Ping-Chuan Wang ,  Kai D. Feng

    IPC: H01L21/84 ,  H01L21/28 ,  H01L21/3065 ,  H01L27/12

    CPC classification number: H01L21/84 ,  H01L27/1203

    Abstract: Structures for a commonly-bodied field-effect transistors and methods of forming such structures. The structure includes a body of semiconductor material defined by a trench isolation region in a semiconductor substrate. The body includes a plurality of first sections, a plurality of second sections, and a third section, the second sections coupling the first sections and the third section. The third section includes a contact region used as a common-body contact for at least the first sections. The first sections and the third section have a first height and the second sections have a second height that is less than the first height.

    Air gap electrostatic discharge structure for high speed circuits
    5.
    发明授权
    Air gap electrostatic discharge structure for high speed circuits 有权
    用于高速电路的气隙静电放电结构

    公开(公告)号：US09380688B1

    公开(公告)日：2016-06-28

    申请号：US14985542

    申请日：2015-12-31

    Applicant: International Business Machines Corporation ,  GlobalFoundries, Inc.

    Inventor： Kai D. Feng ,  Yang Liu ,  Dongbing Shao ,  Zheng Xu

    IPC: H02H9/06 ,  H05F3/04 ,  H02H7/20

    CPC classification number: H05F3/04 ,  H01L23/60 ,  H01L27/0248 ,  H01L27/0288

    Abstract: Aspects relate to an electrostatic discharge (ESD) system for ESD protection and a method of manufacturing. The ESD system includes a lower substrate, an underfill layer that is disposed on the lower substrate that includes a plurality of cavities, and an upper substrate disposed on the underfill layer. The upper substrate includes a plurality of air ventilation shafts. The ESD system also includes a plurality of air gap metal tip structures disposed within one or more of the plurality of cavities in the underfill, wherein the plurality of ventilation shafts line up with the plurality of air gap metal tip structures. At least one air gap tip structure includes an upper metallic tip and a lower metallic tip that are placed along a vertical axis that is perpendicular to the substrates. An air cavity is provided between the upper metallic tip and the lower metallic tip forming an air chamber.

    Abstract translation: 方面涉及用于ESD保护的静电放电（ESD）系统和制造方法。 ESD系统包括下基板，设置在包括多个空腔的下基板上的底部填充层，以及设置在底部填充层上的上基板。 上基板包括多个通风轴。 ESD系统还包括设置在底部填充物中的多个空腔内的一个或多个空腔内的多个气隙金属尖端结构，其中多个通气轴与多个气隙金属尖端结构对齐。 至少一个气隙尖端结构包括沿着垂直于基底的垂直轴放置的上金属末端和下金属末端。 在上金属端头和下金属端头之间设有空气腔，形成一个空气室。

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