公开(公告)号：US20180005826A1

公开(公告)日：2018-01-04

申请号：US15198570

申请日：2016-06-30

Applicant: GLOBALFOUNDRIES Inc. ,  International Business Machines Corporation

Inventor： Ajey P. JACOB ,  Jody FRONHEISER ,  Bruce DORIS ,  Huiming BU

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/161 ,  H01L29/10 ,  H01L29/06 ,  H01L21/3065 ,  H01L29/78 ,  H01L29/165

CPC classification number: H01L29/0638 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02532 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66537 ,  H01L29/66795

Abstract: A method of preventing corner rounding for an alternate channel FINFET formed in trenches and the resulting devices are provided. Embodiments include providing a Si substrate; forming a trench in the Si substrate; forming a Si based layer with a flat upper surface in the trench; and forming a SiGe layer over the Si based layer.

公开(公告)号：US20160260742A1

公开(公告)日：2016-09-08

申请号：US15156506

申请日：2016-05-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ajey Poovannummoottil JACOB ,  Kangguo CHENG ,  Bruce DORIS ,  Nicolas LOUBET ,  Prasanna KHARE ,  Rama DIVAKARUNI

IPC: H01L27/12 ,  H01L29/78 ,  H01L21/308 ,  H01L21/02 ,  H01L21/84 ,  H01L21/306

CPC classification number: H01L27/1211 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02612 ,  H01L21/02614 ,  H01L21/0262 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7849 ,  H01L29/785

Abstract: Methods and semiconductor structures formed from the methods are provided which facilitate fabricating semiconductor fin structures. The methods include, for example: providing a wafer with at least one semiconductor fin extending above a substrate; transforming a portion of the semiconductor fin(s) into an isolation layer, the isolation layer separating a semiconductor layer of the semiconductor fin(s) from the substrate; and proceeding with forming a fin device(s) of a first architectural type in a first fin region of the semiconductor fin(s), and a fin device(s) of a second architectural type in a second fin region of the semiconductor fin(s), where the first architectural type and the second architectural type are different fin device architectures.

Abstract translation: 提供了由这些方法形成的方法和半导体结构，其有助于制造半导体鳍结构。 所述方法包括例如：提供具有在衬底上延伸的至少一个半导体鳍片的晶片; 将所述半导体鳍片的一部分转换成隔离层，所述隔离层将所述半导体鳍片的半导体层与所述衬底分离; 并且在半导体鳍片的第一鳍片区域中形成第一结构类型的翅片装置，并且在半导体鳍片的第二鳍片区域中形成第二结构类型的鳍片装置（ s），其中第一架构类型和第二架构类型是不同的fin设备架构。