公开(公告)号：US09791771B2

公开(公告)日：2017-10-17

申请号：US15041476

申请日：2016-02-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： Zhengqing John Qi ,  Jed H. Rankin

IPC: G03F1/22 ,  G06F17/50 ,  G03F1/72 ,  G03F1/24 ,  G03F7/20 ,  G03F1/84 ,  G03F7/11 ,  G03F1/80

CPC classification number: G03F1/22 ,  G03F1/24 ,  G03F1/72 ,  G03F1/80 ,  G03F1/84 ,  G03F7/11 ,  G03F7/7065

Abstract: Disclosed are a repairable photomask structure and extreme ultraviolet (EUV) photolithography methods. The structure includes a multilayer stack, a protective layer above the stack and a light absorber layer above the protective layer. The stack includes alternating layers of high and low atomic number materials and a selected one of the high atomic number material layers is different from the others such that it functions as an etch stop layer. This configuration allows the photomask structure to be repaired if/when defects are detected near exposed surfaces of the multilayer stack following light absorber layer patterning. For example, when a defect is detected near an exposed surface of the stack in a specific opening in the light absorber layer, the opening can be selectively extended down to the etch stop layer or all the openings can be extended down to the etch stop layer in order to remove that defect.

公开(公告)号：US20170315438A1

公开(公告)日：2017-11-02

申请号：US15139994

申请日：2016-04-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Zhengqing John Qi ,  Christina A. Turley ,  Jed H. Rankin

IPC: G03F1/24

CPC classification number: G03F1/24 ,  G03F1/38

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to modified surfaces of extreme ultraviolet lithography photomasks and methods of manufacture. The structure includes a reflective surface having a patterned design, and a black border region at edges of the patterned design. The black border region includes a modified surface morphology to direct light away from reaching a subsequent mirror.

公开(公告)号：US20170235217A1

公开(公告)日：2017-08-17

申请号：US15041476

申请日：2016-02-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： Zhengqing John Qi ,  Jed H. Rankin

IPC: G03F1/22 ,  G06F17/50

CPC classification number: G03F1/22 ,  G03F1/24 ,  G03F1/72 ,  G03F1/80 ,  G03F1/84 ,  G03F7/11 ,  G03F7/7065

Abstract: Disclosed are a repairable photomask structure and extreme ultraviolet (EUV) photolithography methods. The structure includes a multilayer stack, a protective layer above the stack and a light absorber layer above the protective layer. The stack includes alternating layers of high and low atomic number materials and a selected one of the high atomic number material layers is different from the others such that it functions as an etch stop layer. This configuration allows the photomask structure to be repaired if/when defects are detected near exposed surfaces of the multilayer stack following light absorber layer patterning. For example, when a defect is detected near an exposed surface of the stack in a specific opening in the light absorber layer, the opening can be selectively extended down to the etch stop layer or all the openings can be extended down to the etch stop layer in order to remove that defect.

公开(公告)号：US10332745B2

公开(公告)日：2019-06-25

申请号：US15597277

申请日：2017-05-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Lei Sun ,  Ruilong Xie ,  Wenhui Wang ,  Yulu Chen ,  Erik Verduijn ,  Zhengqing John Qi ,  Guoxiang Ning ,  Daniel J. Dechene

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/768 ,  H01L21/3065

Abstract: Methods of forming printed patterns and structures formed using printed patterns. A first line and a second line are lithographically printed in a first layer composed of photoimageable material with a space arranged between the first line and the second line. A dummy assist feature is also lithographically printed in the photoimageable material of the first layer. A second layer underlying the first layer is etched with the first line, the second line, and the dummy assist feature present as an etch mask. The dummy assist feature is arranged on a portion of the space adjacent to the first line and supports the photoimageable material of the first line during etching.

公开(公告)号：US09946152B2

公开(公告)日：2018-04-17

申请号：US15139994

申请日：2016-04-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Zhengqing John Qi ,  Christina A. Turley ,  Jed H. Rankin

IPC: G03F1/24 ,  G03F1/22

CPC classification number: G03F1/24 ,  G03F1/38

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to modified surfaces of extreme ultraviolet lithography photomasks and methods of manufacture. The structure includes a reflective surface having a patterned design, and a black border region at edges of the patterned design. The black border region includes a modified surface morphology to direct light away from reaching a subsequent mirror.

公开(公告)号：US20180337045A1

公开(公告)日：2018-11-22

申请号：US15597277

申请日：2017-05-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Lei Sun ,  Ruilong Xie ,  Wenhui Wang ,  Yulu Chen ,  Erik Verduijn ,  Zhengqing John Qi ,  Guoxiang Ning ,  Daniel J. Dechene

IPC: H01L21/033 ,  H01L23/528 ,  H01L21/3065 ,  H01L21/768 ,  H01L21/027

CPC classification number: H01L21/0276 ,  H01L21/3083 ,  H01L21/31144 ,  H01L21/76879

Abstract: Methods of forming printed patterns and structures formed using printed patterns. A first line and a second line are lithographically printed in a first layer composed of photoimageable material with a space arranged between the first line and the second line. A dummy assist feature is also lithographically printed in the photoimageable material of the first layer. A second layer underlying the first layer is etched with the first line, the second line, and the dummy assist feature present as an etch mask. The dummy assist feature is arranged on a portion of the space adjacent to the first line and supports the photoimageable material of the first line during etching.