公开(公告)号：US10332745B2

公开(公告)日：2019-06-25

申请号：US15597277

申请日：2017-05-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Lei Sun ,  Ruilong Xie ,  Wenhui Wang ,  Yulu Chen ,  Erik Verduijn ,  Zhengqing John Qi ,  Guoxiang Ning ,  Daniel J. Dechene

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/768 ,  H01L21/3065

Abstract: Methods of forming printed patterns and structures formed using printed patterns. A first line and a second line are lithographically printed in a first layer composed of photoimageable material with a space arranged between the first line and the second line. A dummy assist feature is also lithographically printed in the photoimageable material of the first layer. A second layer underlying the first layer is etched with the first line, the second line, and the dummy assist feature present as an etch mask. The dummy assist feature is arranged on a portion of the space adjacent to the first line and supports the photoimageable material of the first line during etching.

公开(公告)号：US10802393B2

公开(公告)日：2020-10-13

申请号：US15784408

申请日：2017-10-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Lei Sun ,  Obert R. Wood, II ,  Genevieve Beique ,  Yulu Chen ,  Erik Verduijn ,  Francis Goodwin

IPC: G03F1/24 ,  G03F1/58 ,  G03F1/80

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an extreme ultraviolet (EUV) lithography mask and methods of manufacture. The EUV mask structure includes: a reflective layer; a capping material on the reflective layer; a buffer layer on the capping layer; alternating absorber layers on the buffer layer; and a capping layer on the top of the alternating absorber layers.

公开(公告)号：US20180337045A1

公开(公告)日：2018-11-22

申请号：US15597277

申请日：2017-05-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Lei Sun ,  Ruilong Xie ,  Wenhui Wang ,  Yulu Chen ,  Erik Verduijn ,  Zhengqing John Qi ,  Guoxiang Ning ,  Daniel J. Dechene

IPC: H01L21/033 ,  H01L23/528 ,  H01L21/3065 ,  H01L21/768 ,  H01L21/027

CPC classification number: H01L21/0276 ,  H01L21/3083 ,  H01L21/31144 ,  H01L21/76879

Abstract: Methods of forming printed patterns and structures formed using printed patterns. A first line and a second line are lithographically printed in a first layer composed of photoimageable material with a space arranged between the first line and the second line. A dummy assist feature is also lithographically printed in the photoimageable material of the first layer. A second layer underlying the first layer is etched with the first line, the second line, and the dummy assist feature present as an etch mask. The dummy assist feature is arranged on a portion of the space adjacent to the first line and supports the photoimageable material of the first line during etching.

公开(公告)号：US20190056651A1

公开(公告)日：2019-02-21

申请号：US15681491

申请日：2017-08-21

Applicant: GLOBALFOUNDRIES INC.

Inventor： Erik Verduijn ,  Yulu Chen ,  Lars Liebmann ,  Pawitter Mangat

IPC: G03F1/24 ,  G03F1/72 ,  G03F1/84 ,  G03F7/40 ,  H01L21/033 ,  H01L21/3213

Abstract: A photomask includes a substrate having a top surface. A topographical feature is formed on the top surface of the substrate. The topographical feature may be a bump or a pit created on the top surface of the substrate. A reflector is formed on the top surface of the substrate over the topographical feature. The topographical feature warps the reflector in order to generate phase and/or amplitude gradients in light reflected off the reflector. An absorber is patterned on the reflector defining lithographic patterns for a resist material. The gradients in the light reflected off the reflector create shadow regions during lithography of the resist material using extreme ultraviolet (EUV) light.

公开(公告)号：US09484258B1

公开(公告)日：2016-11-01

申请号：US15071247

申请日：2016-03-16

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ryan Ryoung-han Kim ,  Wenhui Wang ,  Lei Sun ,  Erik Verduijn ,  Yulu Chen

IPC: H01L21/768 ,  H01L23/528

CPC classification number: H01L21/76897 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816 ,  H01L23/5226 ,  H01L23/528

Abstract: A method for producing self-aligned vias (SAV) is provided. Embodiments include forming a ILOS layer over a dielectric layer; forming pairs of spacers over the ILOS layer, each pair of spacers having a first filler formed between adjacent spacers, and a second filler formed between each pair of spacers; forming and patterning a first OPL to expose one second filler, spacers on opposite sides of the one second filler, and a portion of the first filler adjacent each of the exposed spacers; removing the one second filler to form a SAV, and SAV etching into the ILOS layer; forming a second OPL over the first OPL and in the SAV to form a SAV plug; removing OPL layers and etching into the ILOS layer down to the dielectric layer; forming a third OPL layer in spaces between the TEOS layer; and removing the SAV plug.

Abstract translation: 提供了一种生产自对准通孔（SAV）的方法。 实施例包括在电介质层上形成ILOS层; 在ILOS层上形成隔离物对，每对隔离物具有形成在相邻间隔物之间​​的第一填料和在每对隔离物之间形成的第二填料; 形成和图案化第一OPL以暴露一个第二填料，一个第二填料的相对侧上的间隔物和与每个暴露间隔物相邻的第一填料的一部分; 去除一个第二填料以形成SAV，并且SAV蚀刻到ILOS层中; 在第一OPL和SAV上形成第二OPL以形成SAV插头; 去除OPL层并蚀刻到ILOS层中直到电介质层; 在TEOS层之间的空间中形成第三OPL层; 并卸下SAV插头。

公开(公告)号：US09478462B1

公开(公告)日：2016-10-25

申请号：US15071255

申请日：2016-03-16

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Wenhui Wang ,  Ryan Ryoung-han Kim ,  Lei Sun ,  Erik Verduijn ,  Yulu Chen

IPC: H01L21/768 ,  H01L21/306 ,  H01L21/311 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L21/76816 ,  H01L21/76808 ,  H01L21/76897 ,  H01L23/5226

Abstract: Methods of forming a SAV using a selective SAQP or SADP process are provided. Embodiments include providing on a TiN layer and dielectric layers alternating mandrels and non-mandrel fillers, spacers therebetween, and a metal cut plug through a mandrel or a non-mandrel filler; removing a non-mandrel filler through a SAV patterning stack having an opening over the non-mandrel filler and adjacent spacers, forming a trench; removing a mandrel through a second SAV patterning stack having an opening over the mandrel and adjacent spacers, forming a second trench; etching the trenches through the TiN and dielectric layers; forming plugs in the trenches; removing the mandrels and non-mandrel fillers, forming third trenches; etching the third trenches through the TiN layer; removing the metal cut plug and spacers and etching the third trenches into the dielectric layer; removing the plugs; and filling the trenches with metal.

Abstract translation: 提供了使用选择性SAQP或SADP方法形成SAV的方法。 实施例包括在TiN层和介电层上提供交替的心轴和非心轴填料，间隔件和通过心轴或非心轴填料的金属切割塞; 通过具有在非芯棒填料和相邻间隔物上的开口的SAV图案化叠层去除非芯棒填料，形成沟槽; 通过具有在所述心轴和相邻间隔物上的开口的第二SAV图案化叠层移除心轴，形成第二沟槽; 通过TiN和电介质层蚀刻沟槽; 在沟槽中形成插塞; 去除心轴和非心轴填料，形成第三沟槽; 蚀刻通过TiN层的第三沟槽; 去除金属切割塞子和间隔件并将第三沟槽蚀刻到介电层中; 取下插头; 并用金属填充沟槽。