公开(公告)号：US20140252445A1

公开(公告)日：2014-09-11

申请号：US13788174

申请日：2013-03-07

申请人： GLOBALFOUNDRIES SINGAPORE PTE. LTD.

发明人： Yu Chen ,  Huajun Liu ,  Siow Lee Chwa ,  Soh Yun Siah ,  Yanxia Shao ,  Yoke Leng Lim

IPC分类号： H01L21/283 ,  H01L29/788

CPC分类号： H01L27/11521 ,  H01L21/0332 ,  H01L21/28273 ,  H01L21/3213 ,  H01L27/11568 ,  H01L29/42328 ,  H01L29/42332 ,  H01L29/42344 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66825

摘要： Fabrication of a slim split gate cell and the resulting device are disclosed. Embodiments include forming a first gate on a substrate, the first gate having an upper surface and a hard-mask covering the upper surface, forming an interpoly isolation layer on side surfaces of the first gate and the hard-mask, forming a second gate on one side of the first gate, with an uppermost point of the second gate below the upper surface of the first gate, removing the hard-mask, forming spacers on exposed vertical surfaces, and forming a salicide on exposed surfaces of the first and second gates.

摘要翻译： 公开了一种细长分裂栅极电池的制造和所得到的器件。 实施例包括在基板上形成第一栅极，第一栅极具有上表面和覆盖上表面的硬掩模，在第一栅极和硬掩模的侧表面上形成间隔隔离层，形成第二栅极 第一栅极的一侧，第二栅极的最上部点在第一栅极的上表面下方，去除硬掩模，在暴露的垂直表面上形成间隔物，并在第一和第二栅极的暴露表面上形成硅化物 。

公开(公告)号：US09111866B2

公开(公告)日：2015-08-18

申请号：US13788174

申请日：2013-03-07

申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.

发明人： Yu Chen ,  Huajun Liu ,  Siow Lee Chwa ,  Soh Yun Siah ,  Yanxia Shao ,  Yoke Leng Lim

IPC分类号： H01L29/788 ,  H01L21/28 ,  H01L27/115 ,  H01L29/423

CPC分类号： H01L27/11521 ,  H01L21/0332 ,  H01L21/28273 ,  H01L21/3213 ,  H01L27/11568 ,  H01L29/42328 ,  H01L29/42332 ,  H01L29/42344 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66825

摘要： Fabrication of a slim split gate cell and the resulting device are disclosed. Embodiments include forming a first gate on a substrate, the first gate having an upper surface and a hard-mask covering the upper surface, forming an interpoly isolation layer on side surfaces of the first gate and the hard-mask, forming a second gate on one side of the first gate, with an uppermost point of the second gate below the upper surface of the first gate, removing the hard-mask, forming spacers on exposed vertical surfaces, and forming a salicide on exposed surfaces of the first and second gates.

摘要翻译： 公开了一种细长分裂栅极电池的制造和所得到的器件。 实施例包括在基板上形成第一栅极，第一栅极具有上表面和覆盖上表面的硬掩模，在第一栅极和硬掩模的侧表面上形成间隔隔离层，形成第二栅极 第一栅极的一侧，第二栅极的最上部点在第一栅极的上表面下方，去除硬掩模，在暴露的垂直表面上形成间隔物，并在第一和第二栅极的暴露表面上形成硅化物 。

公开(公告)号：US09236391B2

公开(公告)日：2016-01-12

申请号：US14732867

申请日：2015-06-08

申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.

发明人： Yu Chen ,  Huajun Liu ,  Siow Lee Chwa ,  Soh Yun Siah ,  Yanxia Shao ,  Yoke Leng Lim

IPC分类号： H01L29/00 ,  H01L27/115 ,  H01L21/28 ,  H01L29/423 ,  H01L29/66 ,  H01L21/033 ,  H01L21/3213

CPC分类号： H01L27/11521 ,  H01L21/0332 ,  H01L21/28273 ,  H01L21/3213 ,  H01L27/11568 ,  H01L29/42328 ,  H01L29/42332 ,  H01L29/42344 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66825

摘要： Fabrication of a slim split gate cell and the resulting device are disclosed. Embodiments include forming a first gate on a substrate, the first gate having an upper surface and a hard-mask covering the upper surface, forming an interpoly isolation layer on side surfaces of the first gate and the hard-mask, forming a second gate on one side of the first gate, with an uppermost point of the second gate below the upper surface of the first gate, removing the hard-mask, forming spacers on exposed vertical surfaces, and forming a salicide on exposed surfaces of the first and second gates.