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    Reliable contacts
    1.
    发明授权
    Reliable contacts 有权
    可靠的联系人

    公开(公告)号：US08916939B2

    公开(公告)日：2014-12-23

    申请号：US13975379

    申请日：2013-08-26

    Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

    Inventor： Hong Yu ,  Huang Liu

    IPC: H01L27/088 ,  H01L21/768 ,  H01L29/417 ,  H01L21/8234

    CPC classification number: H01L29/4175 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76897 ,  H01L21/823425 ,  H01L21/823475 ,  Y10S438/957

    Abstract: A method for forming a device is disclosed. The method includes providing a substrate prepared with first and second contact regions and a dielectric layer over the contact region. First and second vias are formed in the dielectric layer. The first via is in communication with the first contact region and the second via is in communication with the second contact region. A buried void provides a communication path between the first and second vias. The vias and buried void are at least partially filled with a dielectric filler. The partially filled buried void blocks the communication path between the first and second vias created by the buried void. The dielectric filler in the vias is removed, leaving remaining dielectric filler in the buried void to block the communication path between the first and second vias and contact plugs are formed in the vias.

    Abstract translation: 公开了一种用于形成装置的方法。 该方法包括提供用第一和第二接触区域制备的衬底和在接触区域上的电介质层。 第一和第二通孔形成在电介质层中。 第一通孔与第一接触区域连通，第二通孔与第二接触区域连通。 埋置的空隙提供第一和第二通孔之间的连通路径。 通孔和掩埋的空隙至少部分地填充有介电填料。 部分填充的掩埋空隙阻挡由埋入空隙产生的第一和第二通孔之间的连通路径。 去除通孔中的介电填料，留下掩埋空隙中的剩余电介质填料阻止第一和第二通孔之间的连通路径，并且在通孔中形成接触塞。

    Through silicon vias
    3.
    发明授权
    Through silicon vias 有权
    通过硅通孔

    公开(公告)号：US09287197B2

    公开(公告)日：2016-03-15

    申请号：US13831898

    申请日：2013-03-15

    Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

    Inventor： Benfu Lin ,  Hong Yu ,  Lup San Leong ,  Alex See ,  Wei Lu

    IPC: H01L21/44 ,  H01L21/00 ,  H01L23/48 ,  H01L21/768

    CPC classification number: H01L23/535 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/528 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A device and methods for forming a device are disclosed. A substrate is provided and a TSV is formed in the substrate through a top surface of the substrate. The TSV and top surface of the substrate is lined with an insulation stack having a first insulation layer, a polish stop layer and a second insulation layer. A conductive layer is formed on the substrate. The TSV is filled with conductive material of the conductive layer. The substrate is planarized to remove excess conductive material of the conductive layer. The planarizing stops on the polish stop layer to form a planar top surface.

    Abstract translation: 公开了一种用于形成装置的装置和方法。 提供衬底，并且通过衬底的顶表面在衬底中形成TSV。 衬底的TSV和顶表面衬有具有第一绝缘层，抛光停止层和第二绝缘层的绝缘堆叠。 在基板上形成导电层。 TSV填充有导电层的导电材料。 将衬底平坦化以除去导电层的过量导电材料。 平坦化停止在抛光停止层上以形成平坦的顶表面。

    THROUGH SILICON VIAS
    5.
    发明申请
    THROUGH SILICON VIAS 有权
    通过硅胶

    公开(公告)号：US20140264911A1

    公开(公告)日：2014-09-18

    申请号：US13831898

    申请日：2013-03-15

    Applicant: GLOBALFOUNDRIES SINGAPORE PTE. LTD.

    Inventor： Benfu LIN ,  Hong Yu ,  Lup San ,  Alex See ,  Wei Lu

    IPC: H01L23/48 ,  H01L21/768

    CPC classification number: H01L23/535 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/528 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A device and methods for forming a device are disclosed. A substrate is provided and a TSV is formed in the substrate through a top surface of the substrate. The TSV and top surface of the substrate is lined with an insulation stack having a first insulation layer, a polish stop layer and a second insulation layer. A conductive layer is formed on the substrate. The TSV is filled with conductive material of the conductive layer. The substrate is planarized to remove excess conductive material of the conductive layer. The planarizing stops on the polish stop layer to form a planar top surface.

    Abstract translation: 公开了一种用于形成装置的装置和方法。 提供衬底，并且通过衬底的顶表面在衬底中形成TSV。 衬底的TSV和顶表面衬有具有第一绝缘层，抛光停止层和第二绝缘层的绝缘堆叠。 在基板上形成导电层。 TSV填充有导电层的导电材料。 将衬底平坦化以除去导电层的过量导电材料。 平坦化停止在抛光停止层上以形成平坦的顶表面。

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