PLASMA PROCESSING APPARATUS, DEPOSITION METHOD, METHOD OF MANUFACTURING METAL PLATE HAVING DLC FILM, METHOD OF MANUFACTURING SEPARATOR, AND METHOD OF MANUFACTURING ARTICLE
    2.
    发明申请
    PLASMA PROCESSING APPARATUS, DEPOSITION METHOD, METHOD OF MANUFACTURING METAL PLATE HAVING DLC FILM, METHOD OF MANUFACTURING SEPARATOR, AND METHOD OF MANUFACTURING ARTICLE 审中-公开
    等离子体处理装置,沉积方法,制造具有DLC膜的金属板的方法,制造分离器的方法和制造方法

    公开(公告)号:US20120045591A1

    公开(公告)日:2012-02-23

    申请号:US13195291

    申请日:2011-08-01

    申请人: Ge Xu

    发明人: Ge Xu

    IPC分类号: C23C16/50 C23C16/26

    CPC分类号: C23C16/26 C23C16/515

    摘要: A plasma processing apparatus includes a holder holding an object to be processed in a vacuum chamber while being electrically connected to the object, a first take-up portion configured to take up an electrically conductive sheet and set at a potential different from that of the object at the time of plasma processing, and a second take-up portion configured to take up the electrically conductive sheet which is fed from the first take-up portion and passes through a position facing a processing surface of the object held by the holder.

    摘要翻译: 一种等离子体处理装置,包括保持在真空室中被处理物体同时与物体电连接的保持架;第一卷取部,其构成为吸收导电片并且设定为与物体不同的电位 在等离子体处理时,以及第二卷取部,其构成为吸收从第一卷取部送出的导电片,并通过面对由保持体保持的被处理物的处理面的位置。

    PROCESSES FOR THE PREPARATION OF SGLT2 INHIBITORS
    3.
    发明申请
    PROCESSES FOR THE PREPARATION OF SGLT2 INHIBITORS 有权
    制备SGLT2抑制剂的方法

    公开(公告)号:US20100222599A1

    公开(公告)日:2010-09-02

    申请号:US12545400

    申请日:2009-08-21

    IPC分类号: C07D207/16 C07D309/10

    摘要: Provided are processes for the preparation of complexes that are useful in purifying compounds having an inhibitory effect on sodium-dependent glucose cotransporter SGLT. The processes can reduce the number of steps needed to obtain the target compounds and the complexes formed in the processes are typically provided in a crystalline form.

    摘要翻译: 提供了制备可用于纯化对钠依赖性葡萄糖转运蛋白SGLT具有抑制作用的化合物的复合物的方法。 这些方法可以减少获得目标化合物所需的步骤数量,并且在该方法中形成的络合物通常以结晶形式提供。

    SPUTTER DEVICE AND METHOD OF MANUFACTURING MAGNETIC STORAGE MEDIUM
    9.
    发明申请
    SPUTTER DEVICE AND METHOD OF MANUFACTURING MAGNETIC STORAGE MEDIUM 审中-公开
    溅射装置及制造磁性储存介质的方法

    公开(公告)号:US20110290638A1

    公开(公告)日:2011-12-01

    申请号:US13168560

    申请日:2011-06-24

    申请人: Hiroshi Torii Ge Xu

    发明人: Hiroshi Torii Ge Xu

    IPC分类号: C23C14/34

    摘要: The present invention provides a sputter device and a method of manufacturing a magnetic storage medium capable of forming a buried layer with higher production efficiency in manufacturing a magnetic recording medium. In an embodiment of the present invention, cathodes in opposition to each other with a substrate (201) sandwiched in between are arranged and the phase of high-frequency power to be applied to each cathode is made the same. At this time, it is preferable to reduce the distance between each cathode and the substrate (201). Further, it is also preferable to perform deposition of a buried layer while attracting positive ions in plasma to the substrate (201) by an attracting electric field.

    摘要翻译: 本发明提供一种溅射装置和制造能够在制造磁记录介质时能够形成具有较高生产效率的掩埋层的磁存储介质的方法。 在本发明的一个实施例中,布置了彼此相对的阴极和夹在其间的基板(201),并且施加到每个阴极的高频电力的相位相同。 此时,优选减少阴极和基板(201)之间的距离。 此外,还优选通过吸引电场在衬底(201)吸引等离子体中的正离子的同时进行掩埋层的沉积。

    VACUUM PROCESSING APPARATUS AND VACUUM PROCESSING METHOD
    10.
    发明申请
    VACUUM PROCESSING APPARATUS AND VACUUM PROCESSING METHOD 审中-公开
    真空加工设备和真空加工方法

    公开(公告)号:US20110217467A1

    公开(公告)日:2011-09-08

    申请号:US13037689

    申请日:2011-03-01

    IPC分类号: C23C14/56 B05C11/00

    CPC分类号: B05C11/00 C23C14/56

    摘要: A vacuum processing apparatus includes two process chambers and three load-lock chambers which are alternately connected in series, and a transferring device which transfers a plurality of carriers only between the process chamber and the load-lock chambers that are adjacent to each other. A substrate undergoes deposition processing when the carrier is positioned in the process chamber by the transferring device, and the substrate is replaced when the carrier is positioned in the load-lock chamber by the transferring device.

    摘要翻译: 真空处理装置包括串联交替连接的两个处理室和三个装载锁定室,以及仅在处理室和彼此相邻的装载锁定室之间传送多个载体的传送装置。 当载体通过转移装置定位在处理室中时,基板经历沉积处理,并且当载体通过转印装置定位在装载锁定室中时,基板被更换。