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公开(公告)号：US20110217467A1
公开(公告)日：2011-09-08
申请号：US13037689
申请日：2011-03-01
申请人： Hajime SAHASE , Naoki Watanabe , Ge Xu
发明人： Hajime SAHASE , Naoki Watanabe , Ge Xu
摘要： A vacuum processing apparatus includes two process chambers and three load-lock chambers which are alternately connected in series, and a transferring device which transfers a plurality of carriers only between the process chamber and the load-lock chambers that are adjacent to each other. A substrate undergoes deposition processing when the carrier is positioned in the process chamber by the transferring device, and the substrate is replaced when the carrier is positioned in the load-lock chamber by the transferring device.
摘要翻译： 真空处理装置包括串联交替连接的两个处理室和三个装载锁定室，以及仅在处理室和彼此相邻的装载锁定室之间传送多个载体的传送装置。 当载体通过转移装置定位在处理室中时，基板经历沉积处理，并且当载体通过转印装置定位在装载锁定室中时，基板被更换。
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公开(公告)号：US06361667B1
公开(公告)日：2002-03-26
申请号：US09039482
申请日：1998-03-16
IPC分类号： C23C1435
CPC分类号： C23C14/345 , C23C14/35 , C23C14/351 , H01J37/3266 , H01J37/3405
摘要： This invention discloses ionization sputtering apparatuses which have a function for ionizing sputtered particles. Those apparatuses comprise an ionization means for ionizing sputtered particles from a target. The ionization means generates a plasma by applying radio frequency energy with plasma generation gas at an ionization space between the target and a holder holding a substrate. An disclosed apparatus comprises a magnetic device preventing the plasma from diffusing from the ionization space. Another disclosed apparatus comprises a magnetic device which orients the ionized sputtered particles toward the substrate.
摘要翻译： 本发明公开了具有电离溅射粒子功能的电离溅射装置。 这些装置包括用于从靶中电离溅射的颗粒的离子化装置。 电离装置通过在靶和保持基板的保持架之间的电离空间处施加等离子体产生气体的射频能量来产生等离子体。 公开的装置包括防止等离子体从电离空间扩散的磁性装置。 另一公开的装置包括将离子化的溅射颗粒定向到衬底的磁性装置。
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公开(公告)号：US5944968A
公开(公告)日：1999-08-31
申请号：US931651
申请日：1997-09-16
CPC分类号： H01J37/3455 , C23C14/35 , H01J37/3408
摘要： A sputtering apparatus is provided with a magnetic assembly which is rotated and revolved, and the eccentric distance between the rotation axis and the revolution axis is varied. By this arrangement, erosion profile of a target is made uniform, whereby a uniform thin film is deposited on a substrate surface.
摘要翻译： 溅射装置设置有旋转和旋转的磁性组件，并且旋转轴和旋转轴之间的偏心距离变化。 通过这种布置，使目标的侵蚀曲线均匀，由此在基板表面上沉积均匀的薄膜。
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公开(公告)号：US5676758A
公开(公告)日：1997-10-14
申请号：US635492
申请日：1996-04-22
申请人： Shinya Hasegawa , Shigeru Mizuno , Kazuhito Watanabe , Nobuyuki Takahashi , Manabu Tagami , Takanori Yoshimura , Hajime Sahase
发明人： Shinya Hasegawa , Shigeru Mizuno , Kazuhito Watanabe , Nobuyuki Takahashi , Manabu Tagami , Takanori Yoshimura , Hajime Sahase
IPC分类号： C23C16/50 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/509 , H01J37/32 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/455 , C23C16/45568 , C23C16/45591 , C23C16/4583 , C23C16/509 , H01J37/3244
摘要： A CVD mechanism includes a reactor, a substrate holder, a heating apparatus for heating the substrate holder, a reaction gas supply plate for supplying reaction gas into the reactor, and at least two cylinders disposed in a concentric form on the substrate-facing surface of the reaction gas supply plate so that reaction gas is supplied from an inward portion of each cylinder in the reaction gas supply plate. A power supply mechanism for supplying power to the reaction gas supply plate and the substrate holder, and ring magnets disposed in the upper and lower portions of the reactor are provided so that magnetic lines of force passing through a plasma space are generated by the facing magnetic pole parts of the respective magnets.
摘要翻译： CVD机构包括反应器，基板保持器，用于加热基板保持器的加热装置，用于将反应气体供应到反应器中的反应气体供给板，以及至少两个以同心形式设置在圆筒形基板的表面的基板 反应气体供给板，使得反应气体从反应气体供给板中的每个气缸的向内部分供给。 设置用于向反应气体供给板和基板保持器供电的供电机构和设置在电抗器的上部和下部的环形磁铁，使得通过等离子体空间的磁力线由面对的磁体 各个磁体的极部分。
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公开(公告)号：US5624499A
公开(公告)日：1997-04-29
申请号：US634676
申请日：1996-04-18
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/458 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4583
摘要： A CVD apparatus is equipped with a reactor, a substrate holder, an evacuation section, a reactive gas supply mechanism, a heating mechanism for heating the substrate holder, a differential pressure chuck clamping section for clamping the substrate, and a purge gas supply mechanism for supplying purge gas. The substrate holder is configured to have a circular purge gas blowing channel on the top surface thereof, in which a diameter of an outside wall-surface is less than a diameter of the substrate, and a plurality of purge gas passages in an inside thereof, each of which supplies the purge gas into the purge gas blowing channel. The purge gas passing the purge gas blowing channel is blown off through a clearance between the outer periphery of the substrate and the substrate holder. The purge gas passage includes a radius-directed part directed in a radius direction of the substrate holder and has a purge gas outlet provided on the outside wall-surface of the purge gas blowing channel. The flow of the purge gas in a circumferential direction within the purge gas blowing channel is turbulent and dispersed, and therefore the purge gas blow-off pressure in the whole periphery of the substrate is uniform.
摘要翻译： CVD装置配备有反应器，基板保持器，排气部，反应气体供给机构，用于加热基板保持件的加热机构，用于夹持基板的差压卡盘夹持部，以及用于 供应吹扫气体。 衬底保持器构造成在其顶表面上具有圆形吹扫气体吹送通道，其中外壁表面的直径小于衬底的直径，并且在其内部具有多个吹扫气体通道， 其中的每一个将净化气体供应到净化气体吹送通道中。 通过吹扫气体吹送通道的净化气体通过衬底的外周和衬底保持器之间的间隙被吹出。 吹扫气体通道包括朝向衬底保持器的半径方向的半径指向部分，并且具有设置在吹扫气体吹送通道的外壁表面上的吹扫气体出口。 净化气体吹送通道内的吹扫气体在圆周方向上的流动是湍流和分散的，因此衬底整个周边的吹扫气体吹出压力是均匀的。
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