REMA objective for microlithographic projection exposure systems
    1.
    发明授权
    REMA objective for microlithographic projection exposure systems 失效
    用于微光刻投影曝光系统的REMA目标

    公开(公告)号:US5982558A

    公开(公告)日:1999-11-09

    申请号:US771654

    申请日:1996-12-23

    摘要: A REMA objective 123 images an object plane 1 onto the reticle plane 33 and has a lens group 300 disposed in the half of the objective close to the reticle. The object plane 1 lies at a finite spacing. In the lens group 300, the principal ray elevations are greater in magnitude than the elevations of the peripheral rays. A scattering surface 28 is arranged in the lens group 300 having a largest magnitude of sine of the angle of incidence of the principal ray in air with respect to the surface normal (.vertline.sin (i.sub.princ).vertline.) greater than 0.35 and preferably greater than 0.5.

    摘要翻译: REMA目标123将物平面1成像到标线板平面33上,并且具有设置在靠近光罩的物体的一半中的透镜组300。 物平面1位于有限的间距处。 在透镜组300中,主射线高度的大小大于外围射线的高度。 散射表面28布置在透镜组300中,其具有相对于表面法线(| sin(ip​​rinc)|)大于0.35且优选大于0.5的空气中主射线的入射角的最大正弦值的大小 。