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公开(公告)号：US09054242B2
公开(公告)日：2015-06-09
申请号：US13022799
申请日：2011-02-08
申请人： Kenneth Warren Hang , Giovanna Laudisio , Alistair Graeme Prince , Richard John Sheffield Young
发明人： Kenneth Warren Hang , Giovanna Laudisio , Alistair Graeme Prince , Richard John Sheffield Young
IPC分类号： H01L31/0224 , H01L31/18 , C03C8/02 , C03C8/10 , C03C8/24
CPC分类号： H01L31/02245 , C03C8/02 , C03C8/10 , C03C8/24 , Y02E10/50
摘要： A process for the production of a MWT silicon solar cell comprising the steps: (1) providing an n-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) a p-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel, (b) at least one particulate p-type dopant, and (c) an organic vehicle.
摘要翻译： 一种用于生产MWT硅太阳能电池的方法，包括以下步骤：（1）提供n型硅晶片，其具有（i）在晶片的前侧和后侧之间形成通孔的孔，以及（ii） p型发射体在孔的整个前侧和内侧延伸，（2）将导电金属膏施加到硅晶片的孔中，至少提供孔的内部金属化，（3）干燥 施加的导电性金属糊料，（4）烧制干燥后的导电性金属糊料，由此晶片达到700〜900℃的峰值温度，其中导电性金属糊料没有或仅有差的穿透能力，并且包括（a ）至少一种选自银，铜和镍的颗粒状导电金属，（b）至少一种颗粒型p型掺杂剂，和（c）有机载体。
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2.发明申请公开(公告)号：US20110146781A1
公开(公告)日：2011-06-23
申请号：US12822466
申请日：2010-06-24
IPC分类号： H01L31/0224 , H01L31/18
摘要： A process for the production of a grid cathode on the front-side of a silicon wafer by applying and firing a metal paste on the silicon wafer in a front-side grid electrode pattern to form a seed grid cathode and subsequently subjecting the silicon wafer to a LIP process, wherein the metal paste comprises an organic vehicle and an inorganic content comprising (a) 90 to 98 wt.-% of at least one electrically conductive metal powder selected from the group consisting of nickel, copper and silver, and (b) 0.25 to 8 wt.-% of at least one glass frit selected from the group consisting of glass frits containing 47.5 to 64.3 wt.-% of PbO, 23.8 to 32.2 wt.-% of SiO2, 3.9 to 5.4 wt.-% of Al2O3, 2.8 to 3.8 wt.-% of TiO2 and 6.9 to 9.3 wt.-% of B2O3.
摘要翻译： 一种通过在前面的栅极电极图案中在硅晶片上施加和烧制金属浆料来形成硅晶片正面的栅极的方法，以形成种子栅极阴极，随后使硅晶片 LIP方法，其中所述金属糊包括有机载体和无机含量，所述无机物含量包含（a）90至98重量％的至少一种选自镍，铜和银的导电金属粉末和（b ）0.25至8重量％的至少一种玻璃料，其选自含有47.5至64.3重量％的PbO的玻璃料，23.8至32.2重量％的SiO 2，3.9至5.4重量％ 的Al 2 O 3，2.8〜3.8重量％的TiO 2和6.9〜9.3重量％的B 2 O 3。
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公开(公告)号：US20110139238A1
公开(公告)日：2011-06-16
申请号：US12963003
申请日：2010-12-08
申请人： Kenneth Warren Hang , Giovanna Laudisio , Alistair Graeme Prince , Richard John Sheffield Young
发明人： Kenneth Warren Hang , Giovanna Laudisio , Alistair Graeme Prince , Richard John Sheffield Young
CPC分类号： C03C8/02 , C03C8/12 , C03C8/16 , C03C8/18 , H01B1/22 , H01L31/02245 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S438/928
摘要： A process for the production of a MWT silicon solar cell comprising the steps: (1) providing a p-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) an n-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel and (b) an organic vehicle.
摘要翻译： 一种用于生产MWT硅太阳能电池的方法，包括以下步骤：（1）提供p型硅晶片，其具有（i）在晶片的前侧和后侧之间形成通孔的孔，以及（ii） n型发射体在孔的整个前侧和内侧延伸，（2）将导电金属膏施加到硅晶片的孔中，至少提供孔的内部金属化，（3）干燥 施加的导电性金属糊料，（4）烧制干燥后的导电性金属糊料，由此晶片达到700〜900℃的峰值温度，其中导电性金属糊料没有或仅有差的穿透能力，并且包括（a ）至少一种选自银，铜和镍的颗粒状导电金属和（b）有机载体。
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4.发明授权Aluminum pastes and use thereof in the production of passivated emitter and rear contact silicon solar cells 有权铝浆及其在生产钝化发射器和后接触硅太阳能电池中的应用公开(公告)号：US08999203B2
公开(公告)日：2015-04-07
申请号：US12952694
申请日：2010-11-23
申请人： Alistair Graeme Prince , Richard John Sheffield Young , Giovanna Laudisio , Gary Coultart , Kenneth Warren Hang , Ben Whittle
发明人： Alistair Graeme Prince , Richard John Sheffield Young , Giovanna Laudisio , Gary Coultart , Kenneth Warren Hang , Ben Whittle
IPC分类号： H01B1/02 , H01B1/12 , H01B1/22 , H01L31/0224
CPC分类号： H01B1/22 , H01L31/022425 , Y02E10/50
摘要： An aluminum paste comprising particulate aluminum, an organic vehicle and glass frit selected from (i) lead-free glass frits with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO2, >0 to 7 wt.-% of Al2O3 and 2 to 10 wt.-% of B2O3 and (ii) lead-containing glass frits with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO2, 2 to 6 wt.-% of Al2O3 and 6 to 9 wt.-% of B2O3, useful in the production of aluminum back electrodes of PERC silicon solar cells.
摘要翻译： 一种包含微粒铝，有机载体和玻璃料的铝糊料，其选自（i）软化点温度在550-611℃范围内并含有11至33重量％SiO 2的无铅玻璃料， > 0〜7重量％的Al 2 O 3和2〜10重量％的B 2 O 3和（ii）软化点温度在571〜636℃范围内的含铅玻璃料，含有53〜57重量％ 的PbO，25〜29重量％的SiO 2，2〜6重量％的Al 2 O 3和6〜9重量％的B 2 O 3，可用于生产PERC硅太阳能电池的铝背电极。
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5.发明申请公开(公告)号：US20110240124A1
公开(公告)日：2011-10-06
申请号：US12749790
申请日：2010-03-30
IPC分类号： H01L31/0224 , H01B1/02 , H01B1/22 , H01L21/283
CPC分类号： H01B1/22 , H01L31/022425 , Y02E10/50
摘要： Metal pastes comprising (a) at least one electrically conductive metal powder selected from the group consisting of silver, copper and nickel, (b) at least one lead-containing glass frit with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO2, 2 to 6 wt.-% of Al2O3 and 6 to 9 wt.-% of B2O3 and (c) an organic vehicle.
摘要翻译： 金属浆料，其包含（a）至少一种选自银，铜和镍的导电金属粉末，（b）至少一种软化点温度在571至636℃范围内的含铅玻璃料 ，含有53〜57重量％的PbO，25〜29重量％的SiO 2，2〜6重量％的Al 2 O 3和6〜9重量％的B 2 O 3，（c）有机载体。
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6.发明授权Process for the formation of a silver back electrode of a passivated emitter and rear contact silicon solar cell 有权用于形成钝化发射极和后接触硅太阳能电池的银背电极的工艺公开(公告)号：US09343194B2
公开(公告)日：2016-05-17
申请号：US12954039
申请日：2010-11-24
申请人： Alistair Graeme Prince , Richard John Sheffield Young , Giovanna Laudisio , Gary Coultart , Kenneth Warren Hang , Ben Whittle
发明人： Alistair Graeme Prince , Richard John Sheffield Young , Giovanna Laudisio , Gary Coultart , Kenneth Warren Hang , Ben Whittle
IPC分类号： H01L31/18 , H01L31/0224 , H01B1/22 , B22F7/04 , H01B1/16 , B22F7/08 , C03C8/12 , H01L31/0264 , B22F1/00 , C03C8/10
CPC分类号： H01B1/22 , B22F1/0059 , B22F1/007 , B22F7/04 , B22F7/08 , B22F2007/047 , C03C8/10 , C03C8/12 , H01B1/16 , H01L31/022425 , H01L31/0264 , H01L31/1884 , H01L2924/00 , H01L2924/0002 , Y02E10/50 , Y02E10/52
摘要： A process for the formation of an electrically conductive silver back electrode of a PERC silicon solar cell comprising the steps: (1) providing a silicon wafer having an ARC layer on its front-side and a perforated dielectric passivation layer on its back-side, (2) applying and drying a silver paste to form a silver back electrode pattern on the perforated dielectric passivation layer on the back-side of the silicon wafer, and (3) firing the dried silver paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the silver paste has no or only poor fire-through capability and comprises particulate silver and an organic vehicle.
摘要翻译： 一种用于形成PERC硅太阳能电池的导电银背电极的方法，包括以下步骤：（1）在其前侧提供具有ARC层的硅晶片及其背面上的穿孔电介质钝化层， （2）在硅晶片的背面的有孔电介质钝化层上施加和干燥银膏以形成银背电极图案，（3）烧制干燥的银浆，由此晶片达到峰值温度 700至900℃，其中银浆没有或仅仅具有差的穿透能力，并且包括颗粒状银和有机载体。
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公开(公告)号：US08227292B2
公开(公告)日：2012-07-24
申请号：US12963003
申请日：2010-12-08
申请人： Kenneth Warren Hang , Giovanna Laudisio , Alistair Graeme Prince , Richard John Sheffield Young
发明人： Kenneth Warren Hang , Giovanna Laudisio , Alistair Graeme Prince , Richard John Sheffield Young
IPC分类号： H01L21/00 , H01L21/50 , H01L21/48 , H01L21/44 , H01L21/4763
CPC分类号： C03C8/02 , C03C8/12 , C03C8/16 , C03C8/18 , H01B1/22 , H01L31/02245 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S438/928
摘要： A process for the production of a MWT silicon solar cell comprising the steps: (1) providing a p-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) an n-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel and (b) an organic vehicle.
摘要翻译： 一种用于生产MWT硅太阳能电池的方法，包括以下步骤：（1）提供p型硅晶片，其具有（i）在晶片的前侧和后侧之间形成通孔的孔，以及（ii） n型发射体在孔的整个前侧和内侧延伸，（2）将导电金属膏施加到硅晶片的孔中，至少提供孔的内部金属化，（3）干燥 施加的导电性金属糊料，（4）烧制干燥后的导电性金属糊料，由此晶片达到700〜900℃的峰值温度，其中导电性金属糊料没有或仅有差的穿透能力，并且包括（a ）至少一种选自银，铜和镍的颗粒状导电金属和（b）有机载体。
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公开(公告)号：US20110192456A1
公开(公告)日：2011-08-11
申请号：US13022799
申请日：2011-02-08
申请人： Kenneth Warren Hang , Giovanna Laudisio , Alistair Graeme Prince , Richard John Sheffield Young
发明人： Kenneth Warren Hang , Giovanna Laudisio , Alistair Graeme Prince , Richard John Sheffield Young
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/02245 , C03C8/02 , C03C8/10 , C03C8/24 , Y02E10/50
摘要： A process for the production of a MWT silicon solar cell comprising the steps:(1) providing an n-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) a p-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel, (b) at least one particulate p-type dopant, and (c) an organic vehicle.
摘要翻译： 一种用于生产MWT硅太阳能电池的方法，包括以下步骤：（1）提供n型硅晶片，其具有（i）在晶片的前侧和后侧之间形成通孔的孔，以及（ii） p型发射体在孔的整个前侧和内侧延伸，（2）将导电金属膏施加到硅晶片的孔中，至少提供孔的内部金属化，（3）干燥 施加的导电性金属糊料，（4）烧制干燥后的导电性金属糊料，由此晶片达到700〜900℃的峰值温度，其中导电性金属糊料没有或仅有差的穿透能力，并且包括（a ）至少一种选自银，铜和镍的颗粒状导电金属，（b）至少一种颗粒型p型掺杂剂，和（c）有机载体。
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9.发明申请PROCESS FOR THE FORMATION OF A SILVER BACK ELECTRODE OF A PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELL 有权形成钝化发射体和后接触硅太阳能电池的银背电极的工艺公开(公告)号：US20110120551A1
公开(公告)日：2011-05-26
申请号：US12954039
申请日：2010-11-24
申请人： Alistair Graeme Prince , Richard John Sheffield Young , Giovanna Laudisio , Gary Coultart , Kenneth Warren Hang , Ben Whittle
发明人： Alistair Graeme Prince , Richard John Sheffield Young , Giovanna Laudisio , Gary Coultart , Kenneth Warren Hang , Ben Whittle
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01B1/22 , B22F1/0059 , B22F1/007 , B22F7/04 , B22F7/08 , B22F2007/047 , C03C8/10 , C03C8/12 , H01B1/16 , H01L31/022425 , H01L31/0264 , H01L31/1884 , H01L2924/00 , H01L2924/0002 , Y02E10/50 , Y02E10/52
摘要： A process for the formation of an electrically conductive silver back electrode of a PERC silicon solar cell comprising the steps: (1) providing a silicon wafer having an ARC layer on its front-side and a perforated dielectric passivation layer on its back-side, (2) applying and drying a silver paste to form a silver back electrode pattern on the perforated dielectric passivation layer on the back-side of the silicon wafer, and (3) firing the dried silver paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the silver paste has no or only poor fire-through capability and comprises particulate silver and an organic vehicle.
摘要翻译： 一种用于形成PERC硅太阳能电池的导电银背电极的方法，包括以下步骤：（1）在其前侧提供具有ARC层的硅晶片及其背面上的穿孔电介质钝化层， （2）在硅晶片的背面的有孔电介质钝化层上施加和干燥银膏以形成银背电极图案，（3）烧制干燥的银浆，由此晶片达到峰值温度 700至900℃，其中银浆没有或仅仅具有差的穿透能力，并且包括颗粒状银和有机载体。
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10.发明申请公开(公告)号：US20100243048A1
公开(公告)日：2010-09-30
申请号：US12749800
申请日：2010-03-30
IPC分类号： H01L31/0224 , H01L21/3205 , H01B5/00 , H01B1/02 , H01B1/22
摘要： Metal pastes comprising (a) at least one electrically conductive metal powder selected from the group consisting of silver, copper and nickel, (b) at least one lead-free glass frit with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO2, >0 to 7 wt.-% of Al2O3 and 2 to 10 wt.-% of B2O3 and (c) an organic vehicle.
摘要翻译： 金属浆料，其包含（a）至少一种选自银，铜和镍的导电金属粉末，（b）至少一种软化点温度在550至611℃的无铅玻璃料 并且含有11至33重量％的SiO 2，> 0至7重量％的Al 2 O 3和2至10重量％的B 2 O 3和（c）有机载体。
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