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公开(公告)号：US11768153B1
公开(公告)日：2023-09-26
申请号：US17689120
申请日：2022-03-08
CPC分类号： G01N21/31 , G02B6/2935 , G02B6/29343
摘要： Disclosed is a structure (e.g., a lab-on-chip structure) including a substrate, an insulator layer on the substrate, and at least one optical ring resonator. Each ring resonator includes cladding material on the insulator layer and, embedded within the cladding material, a first waveguide core with an input and an output, and second waveguide core(s) (e.g., ring waveguide core(s)) positioned laterally adjacent to the first waveguide core. A reservoir is below the ring resonator within the insulator layer and substrate such that surfaces of the waveguide cores are exposed within the reservoir. During a sensing operation, the waveguide core surfaces contact with fluid within the reservoir and a light signal at the output of the first waveguide core is monitored (e.g., by a sensing circuit, which in some embodiments is also coupled to a reference optical ring resonator) and used, for example, for spectrum-based target identification and, optionally, characterization.
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公开(公告)号：US20220146863A1
公开(公告)日：2022-05-12
申请号：US17092793
申请日：2020-11-09
发明人： Bartlomiej J. Pawlak , Yusheng Bian
IPC分类号： G02F1/01
摘要： Structures for an optical power modulator and methods of fabricating a structure for an optical power modulator. A waveguide core includes a longitudinal axis, a first section, and a second section spaced from the first section along the longitudinal axis. An active layer includes a portion positioned along the longitudinal axis between the first section and the second section of the waveguide core. The active layer contains a material configured to have a first state with a first refractive index in response to an applied stimulus and a second state with a second refractive index different from the first refractive index.
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公开(公告)号：US11145349B1
公开(公告)日：2021-10-12
申请号：US17034405
申请日：2020-09-28
IPC分类号： G11C11/16 , G11C17/12 , G11C11/4072
摘要： Disclosed is a memory cell including parallel-connected first access transistors and a first variable resistor in series between a bitline and a source line and parallel-connected second access transistors and a second variable resistor in series between the bitline and the source line. A write wordline controls one pair of first and second access transistors so that, during an initialization mode, the resistors are concurrently subjected to the same write bias conditions for one-time programming to switch from an unprogrammed state (where the resistors have the same first resistance state) to a programmed state (where one resistor has switched to a second resistance state and a bit is stored). Discrete first and second read wordlines control another pair of first and second access transistors to enable discrete read processes associated with the first and second variable resistors. Also disclosed are an associated circuit (e.g., a PUF) and a method.
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公开(公告)号：US11069830B1
公开(公告)日：2021-07-20
申请号：US16819416
申请日：2020-03-16
IPC分类号： H01L31/028 , H01L31/105 , G02F1/225 , G02F1/015 , G02F1/025 , G02B6/13 , G02B6/42 , H01L33/06 , H01L33/26 , H01L33/14 , H01L33/00
摘要： Disclosed is a quantum-confined Stark effect (QCSE) modulator. In the modulator, a first doped semiconductor region has a first type conductivity, is at the bottom of a trench in a dielectric layer and is immediately adjacent to a semiconductor layer. An MQW region is in the trench on the first doped semiconductor region and at least upper segments of sidewalls of the MQW region are angled away from adjacent sidewalls of the trench such that there are spaces between the MQW region and the dielectric layer. Dielectric spacers fill the spaces. A second doped semiconductor region has a second type conductivity, is on top of the MQW region and optionally extends laterally onto the tops of the dielectric spacers. The spacers prevent shorting of the doped semiconductor regions. Also disclosed are embodiments of a photonics structure including the modulator and of methods for forming the modulator and the photonics structure.
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5.发明公开公开(公告)号：US20240125732A1
公开(公告)日：2024-04-18
申请号：US18047405
申请日：2022-10-18
IPC分类号： G01N27/414
CPC分类号： G01N27/414
摘要： A structure includes a cavity in a semiconductor substrate; a field effect transistor positioned over the cavity; an opening in the semiconductor substrate extending to the cavity; and a layer of insulating material filling the opening and forming an insulating material window to the cavity.
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公开(公告)号：US11474383B2
公开(公告)日：2022-10-18
申请号：US17092793
申请日：2020-11-09
发明人： Bartlomiej J. Pawlak , Yusheng Bian
摘要： Structures for an optical power modulator and methods of fabricating a structure for an optical power modulator. A waveguide core includes a longitudinal axis, a first section, and a second section spaced from the first section along the longitudinal axis. An active layer includes a portion positioned along the longitudinal axis between the first section and the second section of the waveguide core. The active layer contains a material configured to have a first state with a first refractive index in response to an applied stimulus and a second state with a second refractive index different from the first refractive index.
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公开(公告)号：US20230405582A1
公开(公告)日：2023-12-21
申请号：US17807896
申请日：2022-06-21
IPC分类号： B01L3/00 , G01N27/414
CPC分类号： B01L3/502715 , B01L2200/12 , G01N27/414 , B01L3/502707
摘要： Disclosed is a semiconductor structure including a monocrystalline silicon layer having a first surface and a second surface opposite the first surface. A cavity extends into the first semiconductor layer at the second surface. The structure also includes a polycrystalline silicon layer adjacent to the second surface and extending over the cavity. At least one opening extends through the second semiconductor layer to the cavity.
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公开(公告)号：US20230288321A1
公开(公告)日：2023-09-14
申请号：US17689120
申请日：2022-03-08
CPC分类号： G01N21/31 , G02B6/29343 , G02B6/2935
摘要： Disclosed is a structure (e.g., a lab-on-chip structure) including a substrate, an insulator layer on the substrate, and at least one optical ring resonator. Each ring resonator includes cladding material on the insulator layer and, embedded within the cladding material, a first waveguide core with an input and an output, and second waveguide core(s) (e.g., ring waveguide core(s)) positioned laterally adjacent to the first waveguide core. A reservoir is below the ring resonator within the insulator layer and substrate such that surfaces of the waveguide cores are exposed within the reservoir. During a sensing operation, the waveguide core surfaces contact with fluid within the reservoir and a light signal at the output of the first waveguide core is monitored (e.g., by a sensing circuit, which in some embodiments is also coupled to a reference optical ring resonator) and used, for example, for spectrum-based target identification and, optionally, characterization.
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公开(公告)号：US20210280703A1
公开(公告)日：2021-09-09
申请号：US16807623
申请日：2020-03-03
IPC分类号： H01L29/778 , H01L29/15 , H01L29/16 , H01L29/20 , H01L29/205 , H01L29/66 , H01L21/02
摘要： Structures including a buffer layer and methods of forming a structure including a buffer layer. A layer stack is formed on a semiconductor substrate. The layer stack includes a buffer layer and a charge-trapping layer. The buffer layer is composed of a III-V compound semiconductor material, and the charge-trapping layer is positioned between the semiconductor substrate and the buffer layer.
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