Heterogeneous microwave photonic circuits
    1.
    发明授权
    Heterogeneous microwave photonic circuits 有权
    异质微波光子电路

    公开(公告)号:US09166678B1

    公开(公告)日:2015-10-20

    申请号:US13605658

    申请日:2012-09-06

    IPC分类号: H04B10/00 H04B10/11

    摘要: Embodiments of the invention describe (M)MPICs, which include RF processing components and heterogeneous silicon photonic components that include a first region of silicon material and a second region of non-silicon material with high electro-optic efficiency (e.g., III-V material). Said heterogeneous silicon components are fabricated from the silicon and non-silicon material, and therefore may be interconnected via silicon/non-silicon waveguides formed from the above described regions of silicon/non-silicon material. The effect of interconnecting these components via said optical waveguides is that an RF signal may be processed using photonic components consistent with the size of an MMIC, without the need for any optical fibers; therefore, embodiments of the invention describe a chip scale microwave IC that has the broad optical bandwidth of photonics without any optical interfaces to fiber. Furthermore, in some embodiments, the RF processing components, heterogeneous photonic components, and control circuitry may be included in the same chip-scale package.

    摘要翻译: 本发明的实施方案描述了(M)MPIC,其包括RF处理组件和包括硅材料的第一区域和具有高电光效率的非硅材料的第二区域(例如III-V材料)的异质硅光子组件 )。 所述异质硅元件由硅和非硅材料制成,因此可以通过硅/非硅材料的上述区域形成的硅/非硅波导来互连。 通过所述光波导将这些部件互连的效果是可以使用与MMIC的尺寸一致的光子分量来处理RF信号,而不需要任何光纤; 因此,本发明的实施例描述了一种芯片级微波IC,其具有光纤的宽的光学带宽,而没有光纤的任何光接口。 此外,在一些实施例中,RF处理组件,异质光子组件和控制电路可以包括在相同的芯片级封装中。

    Efficient substrate heat transfer layer for photonic devices
    2.
    发明授权
    Efficient substrate heat transfer layer for photonic devices 有权
    用于光子器件的高效衬底传热层

    公开(公告)号:US08981383B1

    公开(公告)日:2015-03-17

    申请号:US13412449

    申请日:2012-03-05

    IPC分类号: G02B6/10

    摘要: Embodiments of the invention describe substrates, used to form optical devices, which include high thermal conductivity intermediate layers. Said substrates comprise a bulk layer, an optical device layer comprising a first material, and an intermediate layer disposed between the bulk layer and the device layer comprising a second material having a higher thermal conductivity and a lower index of refraction than the first material.In the resulting devices, said intermediate layer functions as part of the device layer structure—i.e., provides optical or electrical power dissipation (i.e. thermal) functionality for the device formed from said substrate. Thus, optical devices do not necessarily need to utilize an add-on packaging solution for heat absorption when formed from substrate stacks according to embodiments of the invention. Moreover, in some embodiments, said intermediate layer is located at “zero-distance” from the source of the heat generation, thereby efficiently transferring heat out of that region.

    摘要翻译: 本发明的实施例描述了用于形成光学器件的衬底,其包括高导热性中间层。 所述衬底包括体层,包括第一材料的光学器件层和设置在本体层和器件层之间的中间层,其包括具有比第一材料更高的导热性和较低折射率的第二材料。 在所得到的器件中,所述中间层用作器件层结构的一部分,即为由所述衬底形成的器件提供光或电功率耗散(即热)功能。 因此,根据本发明的实施例,光学器件不一定需要利用由衬底叠层形成的附加包装解决方案用于吸热。 此外,在一些实施例中,所述中间层位于距离发热源的“零距离”处,从而有效地将热量传出该区域。

    Optical cladding layer design
    4.
    发明授权
    Optical cladding layer design 有权
    光学包层设计

    公开(公告)号:US09509122B1

    公开(公告)日:2016-11-29

    申请号:US13597701

    申请日:2012-08-29

    IPC分类号: H01L31/0328 H01S5/32

    摘要: Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.

    摘要翻译: 本发明的实施例描述了与使用光学包层相关的装置,光学系统和方法。 根据一个实施例,混合光学器件包括硅半导体层和具有重叠区域的III-V半导体层,其中重叠区域中的光学模式的大部分场域将包含在III-V半导体中 层。 硅半导体层和III-V半导体层之间的包层区域具有空间特性,以将光学模式基本上限制于III-V半导体层,并且能够通过硅半导体层进行散热。

    THERMAL MANAGEMENT FOR PHOTONIC INTEGRATED CIRCUITS

    公开(公告)号:US20170205577A1

    公开(公告)日:2017-07-20

    申请号:US15478715

    申请日:2017-04-04

    IPC分类号: G02B6/122 G02B6/42 G02B6/13

    摘要: Embodiments of the invention describe apparatuses, systems, and methods of thermal management for photonic integrated circuits (PICs). Embodiments include a first device and a second device comprising including waveguides, wherein the first and second devices have different thermal operating conditions. A first region is adjacent to a waveguide of the first device, wherein its optical mode is to be substantially confined by the first region, and wherein the first region has a first thermal conductivity to dissipate heat based on the thermal operating condition of the first device. A second region is adjacent to a waveguide of the second device, wherein its optical mode is to be substantially confined by the second region, and wherein the second region has a second thermal conductivity to dissipate heat based on the thermal operating condition of the second device. In some embodiments, thermal cross talk is reduced without significantly affecting optical performance.

    OPTICAL CLADDING LAYER DESIGN
    6.
    发明申请
    OPTICAL CLADDING LAYER DESIGN 有权
    光学层压设计

    公开(公告)号:US20170077325A1

    公开(公告)日:2017-03-16

    申请号:US15361865

    申请日:2016-11-28

    IPC分类号: H01L31/0304 H01L31/0232

    摘要: Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.

    摘要翻译: 本发明的实施例描述了与使用光学包层相关的装置,光学系统和方法。 根据一个实施例,混合光学器件包括硅半导体层和具有重叠区域的III-V半导体层,其中重叠区域中的光学模式的大部分场域将包含在III-V半导体中 层。 硅半导体层和III-V半导体层之间的包层区域具有空间特性,以将光学模式基本上限制于III-V半导体层,并且能够通过硅半导体层进行散热。

    Thermal management for photonic integrated circuits
    7.
    发明授权
    Thermal management for photonic integrated circuits 有权
    光子集成电路的热管理

    公开(公告)号:US09360620B2

    公开(公告)日:2016-06-07

    申请号:US13597711

    申请日:2012-08-29

    IPC分类号: G02B6/12 G02B6/42

    摘要: Embodiments of the invention describe apparatuses, systems, and methods of thermal management for photonic integrated circuits (PICs). Embodiments include a first device and a second device comprising including waveguides, wherein the first and second devices have different thermal operating conditions. A first region is adjacent to a waveguide of the first device, wherein its optical mode is to be substantially confined by the first region, and wherein the first region has a first thermal conductivity to dissipate heat based on the thermal operating condition of the first device. A second region is adjacent to a waveguide of the second device, wherein its optical mode is to be substantially confined by the second region, and wherein the second region has a second thermal conductivity to dissipate heat based on the thermal operating condition of the second device. In some embodiments, thermal cross talk is reduced without significantly affecting optical performance.

    摘要翻译: 本发明的实施例描述了用于光子集成电路(PIC)的热管理的装置,系统和方法。 实施例包括第一装置和包括波导的第二装置,其中第一和第二装置具有不同的热操作条件。 第一区域与第一器件的波导相邻,其中其光学模式基本上被第一区域限制,并且其中第一区域具有第一导热性,以便基于第一器件的热操作条件来散热 。 第二区域与第二装置的波导相邻,其中其光学模式基本上被第二区域限制,并且其中第二区域具有第二导热性,以便基于第二装置的热操作条件来散热 。 在一些实施例中,减少热串扰而不显着影响光学性能。