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1.发明授权Spin-on protective coatings for wet-etch processing of microelectronic substrates 有权用于微电子衬底的湿法蚀刻加工的旋涂保护涂层公开(公告)号：US08192642B2
公开(公告)日：2012-06-05
申请号：US11855036
申请日：2007-09-13
申请人： Gu Xu , Kimberly A. Yess , Tony D. Flaim
发明人： Gu Xu , Kimberly A. Yess , Tony D. Flaim
CPC分类号： H01L21/0271 , B81C1/00801 , C08L63/04 , C09D125/12 , Y10T428/31511 , Y10T428/31663 , C08L2666/14
摘要： New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and compatible compounds such as monomers, oligomers, and polymers comprising epoxy groups; poly(styrene-co-allyl alcohol); and mixtures thereof. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.
摘要翻译： 提供了在制造半导体和MEMS器件期间用于湿蚀刻工艺的新的保护涂层。 这些层包括底漆层，第一保护层和任选的第二保护层。 底漆层优选在溶剂体系中包含有机硅烷化合物。 第一保护层包括由苯乙烯，丙烯腈和相容化合物如单体，低聚物和包含环氧基的聚合物制备的热塑性共聚物; 聚（苯乙烯 - 共 - 烯丙醇）; 及其混合物。 第二保护层包括高度卤化的聚合物，例如氯化聚合物，其在加热时可以或不会交联。
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2.发明申请SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES 有权用于微电子基板湿蚀刻加工的旋转保护涂层公开(公告)号：US20120130004A1
公开(公告)日：2012-05-24
申请号：US13361556
申请日：2012-01-30
申请人： Gu Xu , Kimberly A. Yess , Tony D. Flaim
发明人： Gu Xu , Kimberly A. Yess , Tony D. Flaim
IPC分类号： C09D133/20
CPC分类号： H01L21/0271 , B81C1/00801 , C08L63/04 , C09D125/12 , Y10T428/31511 , Y10T428/31663 , C08L2666/14
摘要： New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and compatible compounds such as monomers, oligomers, and polymers comprising epoxy groups; poly(styrene-co-allyl alcohol); and mixtures thereof. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer to which may or may not be crosslinked upon heating.
摘要翻译： 提供了在制造半导体和MEMS器件期间用于湿蚀刻工艺的新的保护涂层。 这些层包括底漆层，第一保护层和任选的第二保护层。 底漆层优选在溶剂体系中包含有机硅烷化合物。 第一保护层包括由苯乙烯，丙烯腈和相容化合物如单体，低聚物和包含环氧基的聚合物制备的热塑性共聚物; 聚（苯乙烯 - 共 - 烯丙醇）; 及其混合物。 第二保护层包括高度卤化的聚合物，例如氯化聚合物，其在加热时可能交联或不会交联。
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3.发明授权Spin-on protective coatings for wet-etch processing of microelectronic substrates 有权用于微电子衬底的湿法蚀刻加工的旋涂保护涂层公开(公告)号：US08445591B2
公开(公告)日：2013-05-21
申请号：US13361556
申请日：2012-01-30
申请人： Gu Xu , Kimberly A. Yess , Tony D. Flaim
发明人： Gu Xu , Kimberly A. Yess , Tony D. Flaim
CPC分类号： H01L21/0271 , B81C1/00801 , C08L63/04 , C09D125/12 , Y10T428/31511 , Y10T428/31663 , C08L2666/14
摘要： New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and compatible compounds such as monomers, oligomers, and polymers comprising epoxy groups; poly(styrene-co-allyl alcohol); and mixtures thereof. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer to which may or may not be crosslinked upon heating.
摘要翻译： 提供了在制造半导体和MEMS器件期间用于湿蚀刻工艺的新的保护涂层。 这些层包括底漆层，第一保护层和可选的第二保护层。 底漆层优选在溶剂体系中包含有机硅烷化合物。 第一保护层包括由苯乙烯，丙烯腈和相容化合物如单体，低聚物和包含环氧基的聚合物制备的热塑性共聚物; 聚（苯乙烯 - 共 - 烯丙醇）; 及其混合物。 第二保护层包括高度卤化的聚合物，例如氯化聚合物，其在加热时可能交联或不会交联。
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4.发明申请SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES 有权用于微电子基板湿蚀刻加工的旋转保护涂层公开(公告)号：US20090075087A1
公开(公告)日：2009-03-19
申请号：US11855036
申请日：2007-09-13
申请人： Gu Xu , Kimberly A. Yess , Tony D. Flaim
发明人： Gu Xu , Kimberly A. Yess , Tony D. Flaim
CPC分类号： H01L21/0271 , B81C1/00801 , C08L63/04 , C09D125/12 , Y10T428/31511 , Y10T428/31663 , C08L2666/14
摘要： New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and compatible compounds such as monomers, oligomers, and polymers comprising epoxy groups; poly(styrene-co-allyl alcohol); and mixtures thereof. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.
摘要翻译： 提供了在制造半导体和MEMS器件期间用于湿蚀刻工艺的新的保护涂层。 这些层包括底漆层，第一保护层和任选的第二保护层。 底漆层优选在溶剂体系中包含有机硅烷化合物。 第一保护层包括由苯乙烯，丙烯腈和相容化合物如单体，低聚物和包含环氧基的聚合物制备的热塑性共聚物; 聚（苯乙烯 - 共 - 烯丙醇）; 及其混合物。 第二保护层包括高度卤化的聚合物，例如氯化聚合物，其在加热时可以或不会交联。
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5.发明授权Spin-on protective coatings for wet-etch processing of microelectronic substrates 有权用于微电子衬底的湿法蚀刻加工的旋涂保护涂层公开(公告)号：US08202442B2
公开(公告)日：2012-06-19
申请号：US11856552
申请日：2007-09-17
申请人： Chenghong Li , Kimberly A. Yess , Tony D. Flaim
发明人： Chenghong Li , Kimberly A. Yess , Tony D. Flaim
CPC分类号： B81C1/00539 , C03C15/00 , C03C2218/355 , C09D125/12 , H01L21/3081 , H01L21/31144 , Y10T428/265 , Y10T428/3154 , Y10T428/31544 , Y10T428/31612 , Y10T428/31663 , Y10T428/31678 , Y10T428/31935
摘要： New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition-polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.
摘要翻译： 提供了在制造半导体和MEMS器件期间用于湿蚀刻工艺的新的保护涂层。 这些层包括底漆层，第一保护层和任选的第二保护层。 底漆层优选在溶剂体系中包含有机硅烷化合物。 第一保护层包括由苯乙烯，丙烯腈和任选的其它加成聚合单体如（甲基）丙烯酸酯单体，乙烯基苄基氯和马来酸或富马酸的二酯制备的热塑性共聚物。 第二保护层包括高度卤化的聚合物，例如氯化聚合物，其在加热时可以或不会交联。
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6.发明授权Scratch-resistant coatings for protecting front-side circuitry during backside processing 有权用于在背面处理过程中保护前端电路的防刮擦涂层公开(公告)号：US08399346B2
公开(公告)日：2013-03-19
申请号：US12882465
申请日：2010-09-15
IPC分类号： H01L21/00
CPC分类号： H01L21/561 , H01L23/293 , H01L23/3121 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： Scratch-resistant coatings for protecting front-side microelectromechanical and semiconductor device features during backside processing are provided, along with methods of using the same. The coatings are non-photosensitive, removable, and tolerate high processing temperatures. These coatings also eliminate the need for a separate etch stop layer in the device design. The coatings are formed from a composition comprising a component dissolved or dispersed in a solvent system. The component is selected from the group consisting of styrene-acrylonitrile copolymers and aromatic sulfone polymers.
摘要翻译： 提供了用于在背面处理期间保护前侧微机电和半导体器件特征的耐刮擦涂层及其使用方法。 涂层是非光敏的，可移除的，并且能承受高的加工温度。 这些涂层也消除了在器件设计中需要单独的蚀刻停止层的需要。 涂层由包含溶解或分散在溶剂体系中的组分的组合物形成。 该组分选自苯乙烯 - 丙烯腈共聚物和芳族砜聚合物。
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7.发明申请SCRATCH-RESISTANT COATINGS FOR PROTECTING FRONT-SIDE CIRCUITRY DURING BACKSIDE PROCESSING 有权用于在背面加工中保护前侧电路的防刮涂层公开(公告)号：US20110062604A1
公开(公告)日：2011-03-17
申请号：US12882465
申请日：2010-09-15
CPC分类号： H01L21/561 , H01L23/293 , H01L23/3121 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： Scratch-resistant coatings for protecting front-side microelectromechanical and semiconductor device features during backside processing are provided, along with methods of using the same. The coatings are non-photosensitive, removable, and tolerate high processing temperatures. These coatings also eliminate the need for a separate etch stop layer in the device design. The coatings are formed from a composition comprising a component dissolved or dispersed in a solvent system. The component is selected from the group consisting of styrene-acrylonitrile copolymers and aromatic sulfone polymers.
摘要翻译： 提供了用于在背面处理期间保护前侧微机电和半导体器件特征的耐刮擦涂层及其使用方法。 涂层是非光敏的，可移除的，并且能承受高的加工温度。 这些涂层也消除了在器件设计中需要单独的蚀刻停止层的需要。 涂层由包含溶解或分散在溶剂体系中的组分的组合物形成。 该组分选自苯乙烯 - 丙烯腈共聚物和芳族砜聚合物。
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