SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES
    4.
    发明申请
    SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES 有权
    用于微电子基板湿蚀刻加工的旋转保护涂层

    公开(公告)号:US20080041815A1

    公开(公告)日:2008-02-21

    申请号:US11856552

    申请日:2007-09-17

    IPC分类号: H01B13/00

    摘要: New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition-polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.

    摘要翻译: 提供了在制造半导体和MEMS器件期间用于湿蚀刻工艺的新的保护涂层。 这些层包括底漆层,第一保护层和任选的第二保护层。 底漆层优选在溶剂体系中包含有机硅烷化合物。 第一保护层包括由苯乙烯,丙烯腈和任选的其它加成聚合单体如(甲基)丙烯酸酯单体,乙烯基苄基氯和马来酸或富马酸的二酯制备的热塑性共聚物。 第二保护层包括高度卤化的聚合物,例如氯化聚合物,其在加热时可以或不会交联。

    Spin-on protective coatings for wet-etch processing of microelectronic substrates
    5.
    发明申请
    Spin-on protective coatings for wet-etch processing of microelectronic substrates 有权
    用于微电子衬底的湿法蚀刻加工的旋涂保护涂层

    公开(公告)号:US20050158538A1

    公开(公告)日:2005-07-21

    申请号:US10759448

    申请日:2004-01-16

    摘要: New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition-polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.

    摘要翻译: 提供了在制造半导体和MEMS器件期间用于湿蚀刻工艺的新的保护涂层。 这些层包括底漆层,第一保护层和任选的第二保护层。 底漆层优选在溶剂体系中包含有机硅烷化合物。 第一保护层包括由苯乙烯,丙烯腈和任选的其它加成聚合单体如(甲基)丙烯酸酯单体,乙烯基苄基氯和马来酸或富马酸的二酯制备的热塑性共聚物。 第二保护层包括高度卤化的聚合物,例如氯化聚合物,其在加热时可以或不会交联。