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    Spin-on protective coatings for wet-etch processing of microelectronic substrates
    1.
    发明授权
    Spin-on protective coatings for wet-etch processing of microelectronic substrates 有权
    用于微电子衬底的湿法蚀刻加工的旋涂保护涂层

    公开(公告)号：US08192642B2

    公开(公告)日：2012-06-05

    申请号：US11855036

    申请日：2007-09-13

    申请人： Gu Xu ,  Kimberly A. Yess ,  Tony D. Flaim

    发明人： Gu Xu ,  Kimberly A. Yess ,  Tony D. Flaim

    IPC分类号： C03C15/00 ,  C03C25/68

    CPC分类号： H01L21/0271 ,  B81C1/00801 ,  C08L63/04 ,  C09D125/12 ,  Y10T428/31511 ,  Y10T428/31663 ,  C08L2666/14

    摘要： New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and compatible compounds such as monomers, oligomers, and polymers comprising epoxy groups; poly(styrene-co-allyl alcohol); and mixtures thereof. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.

    摘要翻译： 提供了在制造半导体和MEMS器件期间用于湿蚀刻工艺的新的保护涂层。 这些层包括底漆层，第一保护层和任选的第二保护层。 底漆层优选在溶剂体系中包含有机硅烷化合物。 第一保护层包括由苯乙烯，丙烯腈和相容化合物如单体，低聚物和包含环氧基的聚合物制备的热塑性共聚物; 聚（苯乙烯 - 共 - 烯丙醇）; 及其混合物。 第二保护层包括高度卤化的聚合物，例如氯化聚合物，其在加热时可以或不会交联。

    SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES
    2.
    发明申请
    SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES 有权
    用于微电子基板湿蚀刻加工的旋转保护涂层

    公开(公告)号：US20120130004A1

    公开(公告)日：2012-05-24

    申请号：US13361556

    申请日：2012-01-30

    申请人： Gu Xu ,  Kimberly A. Yess ,  Tony D. Flaim

    发明人： Gu Xu ,  Kimberly A. Yess ,  Tony D. Flaim

    IPC分类号： C09D133/20

    CPC分类号： H01L21/0271 ,  B81C1/00801 ,  C08L63/04 ,  C09D125/12 ,  Y10T428/31511 ,  Y10T428/31663 ,  C08L2666/14

    摘要： New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and compatible compounds such as monomers, oligomers, and polymers comprising epoxy groups; poly(styrene-co-allyl alcohol); and mixtures thereof. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer to which may or may not be crosslinked upon heating.

    摘要翻译： 提供了在制造半导体和MEMS器件期间用于湿蚀刻工艺的新的保护涂层。 这些层包括底漆层，第一保护层和任选的第二保护层。 底漆层优选在溶剂体系中包含有机硅烷化合物。 第一保护层包括由苯乙烯，丙烯腈和相容化合物如单体，低聚物和包含环氧基的聚合物制备的热塑性共聚物; 聚（苯乙烯 - 共 - 烯丙醇）; 及其混合物。 第二保护层包括高度卤化的聚合物，例如氯化聚合物，其在加热时可能交联或不会交联。

    Spin-on protective coatings for wet-etch processing of microelectronic substrates
    3.
    发明授权
    Spin-on protective coatings for wet-etch processing of microelectronic substrates 有权
    用于微电子衬底的湿法蚀刻加工的旋涂保护涂层

    公开(公告)号：US08445591B2

    公开(公告)日：2013-05-21

    申请号：US13361556

    申请日：2012-01-30

    申请人： Gu Xu ,  Kimberly A. Yess ,  Tony D. Flaim

    发明人： Gu Xu ,  Kimberly A. Yess ,  Tony D. Flaim

    IPC分类号： C08L9/02 ,  B32B27/30 ,  B32B27/38

    CPC分类号： H01L21/0271 ,  B81C1/00801 ,  C08L63/04 ,  C09D125/12 ,  Y10T428/31511 ,  Y10T428/31663 ,  C08L2666/14

    摘要： New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and compatible compounds such as monomers, oligomers, and polymers comprising epoxy groups; poly(styrene-co-allyl alcohol); and mixtures thereof. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer to which may or may not be crosslinked upon heating.

    摘要翻译： 提供了在制造半导体和MEMS器件期间用于湿蚀刻工艺的新的保护涂层。 这些层包括底漆层，第一保护层和可选的第二保护层。 底漆层优选在溶剂体系中包含有机硅烷化合物。 第一保护层包括由苯乙烯，丙烯腈和相容化合物如单体，低聚物和包含环氧基的聚合物制备的热塑性共聚物; 聚（苯乙烯 - 共 - 烯丙醇）; 及其混合物。 第二保护层包括高度卤化的聚合物，例如氯化聚合物，其在加热时可能交联或不会交联。

    SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES
    4.
    发明申请
    SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES 有权
    用于微电子基板湿蚀刻加工的旋转保护涂层

    公开(公告)号：US20090075087A1

    公开(公告)日：2009-03-19

    申请号：US11855036

    申请日：2007-09-13

    申请人： Gu Xu ,  Kimberly A. Yess ,  Tony D. Flaim

    发明人： Gu Xu ,  Kimberly A. Yess ,  Tony D. Flaim

    IPC分类号： B32B27/38 ,  C08L71/10

    CPC分类号： H01L21/0271 ,  B81C1/00801 ,  C08L63/04 ,  C09D125/12 ,  Y10T428/31511 ,  Y10T428/31663 ,  C08L2666/14

    摘要： New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and compatible compounds such as monomers, oligomers, and polymers comprising epoxy groups; poly(styrene-co-allyl alcohol); and mixtures thereof. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.

    摘要翻译： 提供了在制造半导体和MEMS器件期间用于湿蚀刻工艺的新的保护涂层。 这些层包括底漆层，第一保护层和任选的第二保护层。 底漆层优选在溶剂体系中包含有机硅烷化合物。 第一保护层包括由苯乙烯，丙烯腈和相容化合物如单体，低聚物和包含环氧基的聚合物制备的热塑性共聚物; 聚（苯乙烯 - 共 - 烯丙醇）; 及其混合物。 第二保护层包括高度卤化的聚合物，例如氯化聚合物，其在加热时可以或不会交联。

    Scratch-resistant coatings for protecting front-side circuitry during backside processing
    6.
    发明授权
    Scratch-resistant coatings for protecting front-side circuitry during backside processing 有权
    用于在背面处理过程中保护前端电路的防刮擦涂层

    公开(公告)号：US08399346B2

    公开(公告)日：2013-03-19

    申请号：US12882465

    申请日：2010-09-15

    申请人： Kimberly A. Yess ,  Madison M. Daily, Jr. ,  Tony D. Flaim

    发明人： Kimberly A. Yess ,  Madison M. Daily, Jr. ,  Tony D. Flaim

    IPC分类号： H01L21/00

    CPC分类号： H01L21/561 ,  H01L23/293 ,  H01L23/3121 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

    摘要： Scratch-resistant coatings for protecting front-side microelectromechanical and semiconductor device features during backside processing are provided, along with methods of using the same. The coatings are non-photosensitive, removable, and tolerate high processing temperatures. These coatings also eliminate the need for a separate etch stop layer in the device design. The coatings are formed from a composition comprising a component dissolved or dispersed in a solvent system. The component is selected from the group consisting of styrene-acrylonitrile copolymers and aromatic sulfone polymers.

    摘要翻译： 提供了用于在背面处理期间保护前侧微机电和半导体器件特征的耐刮擦涂层及其使用方法。 涂层是非光敏的，可移除的，并且能承受高的加工温度。 这些涂层也消除了在器件设计中需要单独的蚀刻停止层的需要。 涂层由包含溶解或分散在溶剂体系中的组分的组合物形成。 该组分选自苯乙烯 - 丙烯腈共聚物和芳族砜聚合物。

    SCRATCH-RESISTANT COATINGS FOR PROTECTING FRONT-SIDE CIRCUITRY DURING BACKSIDE PROCESSING
    7.
    发明申请
    SCRATCH-RESISTANT COATINGS FOR PROTECTING FRONT-SIDE CIRCUITRY DURING BACKSIDE PROCESSING 有权
    用于在背面加工中保护前侧电路的防刮涂层

    公开(公告)号：US20110062604A1

    公开(公告)日：2011-03-17

    申请号：US12882465

    申请日：2010-09-15

    申请人： Kimberly A. Yess ,  Madison M. Daily, JR. ,  Tony D. Flaim

    发明人： Kimberly A. Yess ,  Madison M. Daily, JR. ,  Tony D. Flaim

    IPC分类号： H01L23/28 ,  H01L21/56

    CPC分类号： H01L21/561 ,  H01L23/293 ,  H01L23/3121 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

    摘要： Scratch-resistant coatings for protecting front-side microelectromechanical and semiconductor device features during backside processing are provided, along with methods of using the same. The coatings are non-photosensitive, removable, and tolerate high processing temperatures. These coatings also eliminate the need for a separate etch stop layer in the device design. The coatings are formed from a composition comprising a component dissolved or dispersed in a solvent system. The component is selected from the group consisting of styrene-acrylonitrile copolymers and aromatic sulfone polymers.

    摘要翻译： 提供了用于在背面处理期间保护前侧微机电和半导体器件特征的耐刮擦涂层及其使用方法。 涂层是非光敏的，可移除的，并且能承受高的加工温度。 这些涂层也消除了在器件设计中需要单独的蚀刻停止层的需要。 涂层由包含溶解或分散在溶剂体系中的组分的组合物形成。 该组分选自苯乙烯 - 丙烯腈共聚物和芳族砜聚合物。

    Article including a device wafer reversibly mountable to a carrier substrate
    10.
    发明授权
    Article including a device wafer reversibly mountable to a carrier substrate 有权
    本文包括可逆地安装到载体衬底的器件晶片

    公开(公告)号：US09099512B2

    公开(公告)日：2015-08-04

    申请号：US12951530

    申请日：2010-11-22

    申请人： Tony D. Flaim ,  Jeremy McCutcheon

    发明人： Tony D. Flaim ,  Jeremy McCutcheon

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/06 ,  H01L21/683

    CPC分类号： H01L21/6835 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/19041 ,  Y10T428/31678 ,  H01L2924/00

    摘要： New temporary bonding methods and articles formed from those methods are provided. The methods comprise bonding a device wafer to a carrier wafer or substrate only at their outer perimeters in order to assist in protecting the device wafer and its device sites during subsequent processing and handling. The edge bonds formed by this method are chemically and thermally resistant, but can also be softened, dissolved, or mechanically disrupted to allow the wafers to be easily separated with very low forces and at or near room temperature at the appropriate stage in the fabrication process.

    摘要翻译： 提供了从这些方法形成的新的临时粘合方法和制品。 这些方法包括仅在其外周界处将器件晶片结合到载体晶片或衬底，以便在随后的处理和处理期间有助于保护器件晶片及其器件位置。 通过该方法形成的边缘粘合是化学和耐热的，但也可以被软化，溶解或机械破坏，以允许晶片在非常低的力和在室温下或在室温下在制造过程中的适当阶段容易地分离 。