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    Switching mode power supply and switch thereof
    1.
    发明申请
    Switching mode power supply and switch thereof 有权
    开关电源及其开关

    公开(公告)号：US20080258564A1

    公开(公告)日：2008-10-23

    申请号：US12148314

    申请日：2008-04-18

    申请人： Gwan-Bon Koo ,  Jin-Tae Kim ,  Yoo-Woong Hwang ,  Kyung-Oun Jang ,  Jin-Woo Moon ,  Sang-Hyun Lee

    发明人： Gwan-Bon Koo ,  Jin-Tae Kim ,  Yoo-Woong Hwang ,  Kyung-Oun Jang ,  Jin-Woo Moon ,  Sang-Hyun Lee

    IPC分类号： H01H47/00

    CPC分类号： H02M3/33523 ,  Y10T307/747

    摘要： A switching mode power supply and a switch thereof are provided. The switch includes a plurality of first transistors, and a second transistor that is turned on/off by a control signal that is equal to that of the plurality of first transistors and in which a second current corresponding to a first current flowing to the plurality of first transistors flows, wherein a ratio of the first current to the second current sequentially changes from a time point at which the second transistor is turned on. Therefore, a switching mode power supply and a switch thereof that can always uniformly sustain a maximum limit current flowing to the switch regardless of a level of an input voltage without including a special additional circuit can be provided.

    摘要翻译： 提供了开关电源及其开关。 开关包括多个第一晶体管，以及通过与多个第一晶体管的控制信号相等的控制信号导通/截止的第二晶体管，并且其中对应于流向多个第一晶体管的第一电流的第二电流 第一晶体管流动，其中第一电流与第二电流的比率从第二晶体管导通的时间点顺序地变化。 因此，可以提供一种开关模式电源及其开关，其可以始终均匀地维持流过开关的最大限制电流，而不考虑输入电压的电平而不包括特殊附加电路。

    Current controlled switching mode power supply
    2.
    发明申请
    Current controlled switching mode power supply 有权
    电流控制切换模式电源

    公开(公告)号：US20070132438A1

    公开(公告)日：2007-06-14

    申请号：US11639005

    申请日：2006-12-14

    申请人： Kyung-Oun Jang ,  Yoo-Woong Hwang

    发明人： Kyung-Oun Jang ,  Yoo-Woong Hwang

    IPC分类号： G05F1/00

    CPC分类号： H02M1/36 ,  H02M1/32 ,  H02M3/33507

    摘要： A current controlled switching mode power supply is provided. A turn on/off time of a switching device is adjusted by controlling a leading edge blanking (LEB) time and an external drive current of the switching device by means of a switching controller, thus capable of preventing a switching current from being excessive due to a delay of a turn-off time of the switching device, which is caused by a circuit delay during a soft start of the switching mode power supply. Also, it is possible to prevent a switching current from being excessive due to a failure of accurately controlling a turn-off time of the switching device because of a delay caused when an output voltage (a voltage at a secondary winding of a transformer) of the switching mode power supply is designed to have a high voltage.

    摘要翻译： 提供电流控制切换模式电源。 通过利用开关控制器控制开关装置的前沿消隐（LEB）时间和外部驱动电流来调节开关装置的导通/截止时间，从而能够防止开关电流由于 在开关模式电源的软启动期间由电路延迟引起的开关器件的关断时间的延迟。 此外，由于由于当输出电压（变压器的次级绕组的电压）的输出电压（变压器的次级绕组的电压）的时间延迟导致开关器件的关断时间的精确控制的故障时，可以防止开关电流过大 开关电源设计为具有高电压。

    MOS transistor and fabrication method thereof
    3.
    发明授权
    MOS transistor and fabrication method thereof 失效
    MOS晶体管及其制造方法

    公开(公告)号：US06853040B2

    公开(公告)日：2005-02-08

    申请号：US10300293

    申请日：2002-11-20

    申请人： Kyung-Oun Jang ,  Sun-Hak Lee

    发明人： Kyung-Oun Jang ,  Sun-Hak Lee

    IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78 ,  H01L29/76

    CPC分类号： H01L29/7816 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7801 ,  H01L29/7835

    摘要： A CMOS transistor is provided having a relatively high breakdown voltage. The CMOS transistor includes an N-type epitaxial layer on a P-type substrate. Between the substrate and epitaxial layer are a heavily doped N-type buried layer and a heavily doped P-type base layer. An N-type sink region is proximate the edge of the NMOS region, and twin wells are in the area surrounded with the sink region. N+ source and drain regions are formed in respective wells. As the sink region is interposed between the drain and isolation regions, a breakdown occurs between the sink and isolation regions when a high voltage is applied. Twin wells are also formed in the PMOS region. P+ source and drain regions are formed in respective wells. As the N-type well surrounds the source and bulk regions, a breakdown occurs between a buried region and the isolation region when a high voltage is applied.

    摘要翻译： 提供具有相对高的击穿电压的CMOS晶体管。 CMOS晶体管包括在P型衬底上的N型外延层。 在衬底和外延层之间是重掺杂的N型掩埋层和重掺杂的P型基极层。 N型接收区域靠近NMOS区域的边缘，并且在阱区域包围的区域中是双阱。 在各孔中形成N +源极和漏极区。 当漏极区域插入在漏极和隔离区域之间时，当施加高电压时，在漏极和隔离区域之间发生击穿。 在PMOS区域也形成双阱。 在各个孔中形成P +源极和漏极区。 当N型阱围绕源区和体区时，当施加高电压时，在掩埋区和隔离区之间发生击穿。

    Pulse width modulation signal generator and switching mode power supply including the same
    6.
    发明授权
    Pulse width modulation signal generator and switching mode power supply including the same 有权
    脉宽调制信号发生器和开关模式电源包括相同

    公开(公告)号：US06972971B2

    公开(公告)日：2005-12-06

    申请号：US10698056

    申请日：2003-10-29

    申请人： Kyung-Oun Jang ,  Eung-Suen Kim

    发明人： Kyung-Oun Jang ,  Eung-Suen Kim

    IPC分类号： H02M3/28 ,  H02M1/00 ,  H02M1/36 ,  H02M3/335 ,  H02M7/22

    CPC分类号： H02M1/36 ,  H02M3/33523 ,  H02M2001/0006

    摘要： A switching mode power supply includes a rectifier configured to convert AC power to a first DC power, an output unit configured to convert the first DC power to a second DC power under the control of a first switch, and a pulse width modulation generator coupled to control the first switch. The pulse width modulation generator has a regulator configured to regulate the first DC power. The regulated first DC power powers the pulse width modulation generator. The regulator includes a second switch coupled to control a transmitter so that when the second switch is in a first state the transmitter transmits the first DC power to a capacitor to charge the capacitor to thereby increase the regulated first DC power, and when the switch is in a second state the transmitter does not transmit the first DC power to the capacitor to thereby allow the charge in the capacitor to reduce and in turn the regulated first DC power to reduce.

    摘要翻译： 开关模式电源包括被配置为将AC电力转换为第一DC电力的整流器，被配置为在第一开关的控制下将第一DC电力转换为第二DC电力的输出单元，以及耦合到 控制第一个开关。 脉宽调制发生器具有调节第一直流功率的调节器。 调节的第一直流电源为脉宽调制发生器供电。 调节器包括耦合以控制发射器的第二开关，使得当第二开关处于第一状态时，发射器将第一DC电力发送到电容器以对电容器充电，从而增加调节的第一DC电力，并且当开关为 在第二状态下，发射机不向电容器传输第一直流电力，从而允许电容器中的电荷减少，从而减小调节的第一直流电力。

    MOS transistor and fabrication method thereof
    7.
    发明授权
    MOS transistor and fabrication method thereof 有权
    MOS晶体管及其制造方法

    公开(公告)号：US06507080B2

    公开(公告)日：2003-01-14

    申请号：US09761902

    申请日：2001-01-17

    申请人： Kyung-Oun Jang ,  Sun-Hak Lee

    发明人： Kyung-Oun Jang ,  Sun-Hak Lee

    IPC分类号： H01L2972

    CPC分类号： H01L29/7816 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7801 ,  H01L29/7835

    摘要： A CMOS transistor is provided having a relatively high breakdown voltage. The CMOS transistor includes an N-type epitaxial layer on a P-type substrate. Between the substrate and epitaxial layer are a heavily doped N-type buried layer and a heavily doped P-type base layer. An N-type sink region is proximatethe edge of the NMOS region, and twin wells are in the area surrounded with the sink region. N+ source and drain regions are formed in respective wells. As the sink region is interposed between the drain and isolation regions, a breakdown occurs between the sink and isolation regions when a high voltage is applied. Twin wells are also formed in the PMOS region P+ source and drain regions are formed in respective wells. As the N-type well surrounds the source and bulk regions, a breakdown occurs between a buried region and the isolation region when a high voltage is applied.

    摘要翻译： 提供具有相对高的击穿电压的CMOS晶体管。 CMOS晶体管包括在P型衬底上的N型外延层。 在衬底和外延层之间是重掺杂的N型掩埋层和重掺杂的P型基极层。 N型接收区靠近NMOS区域的边缘，并且双阱位于被宿区域包围的区域中。 在各孔中形成N +源极和漏极区。 当漏极区域插入在漏极和隔离区域之间时，当施加高电压时，在漏极和隔离区域之间发生击穿。 双阱也形成在PMOS区P +源极和漏极区形成在相应的阱中。 当N型阱围绕源区和体区时，当施加高电压时，在掩埋区和隔离区之间发生击穿。

    Power supply device and driving method thereof
    8.
    发明授权
    Power supply device and driving method thereof 有权
    电源装置及其驱动方法

    公开(公告)号：US08514591B2

    公开(公告)日：2013-08-20

    申请号：US13475730

    申请日：2012-05-18

    申请人： Min-Woo Lee ,  Kyung-Oun Jang ,  Sung-Won Yun ,  Dae-Woong Cho

    发明人： Min-Woo Lee ,  Kyung-Oun Jang ,  Sung-Won Yun ,  Dae-Woong Cho

    IPC分类号： H02M3/335

    CPC分类号： H02M3/33507 ,  H02M2001/0025

    摘要： The present invention relates to a power supply device generating an output power by using an AC line voltage generated through rectification of an AC input, and a driving method thereof. The power supply device controls the switching operation of the power switch by using a sensing voltage corresponding to the drain current flowing to the power switch and the feedback voltage corresponding to the output voltage. The power supply device controls the feedback current every switching cycle to generate a threshold voltage, and compares the sensing voltage and the threshold voltage to control the turn-off of the power switch. The feedback current includes the first current to generate the feedback voltage, and the threshold voltage follows a curved line waveform in which the increasing slope is decreased during the switching cycle.

    摘要翻译： 本发明涉及通过使用通过AC输入的整流产生的AC线电压来产生输出功率的电源装置及其驱动方法。 电源装置通过使用对应于流向电源开关的漏极电流的感测电压和对应于输出电压的反馈电压来控制电源开关的开关操作。 电源装置在每个开关周期控制反馈电流以产生阈值电压，并比较感测电压和阈值电压以控制电源开关的关断。 反馈电流包括产生反馈电压的第一电流，并且阈值电压遵循在开关周期期间增加斜率减小的曲线波形。

    High efficiency switching controller
    9.
    发明授权
    High efficiency switching controller 有权
    高效切换控制器

    公开(公告)号：US06381151B1

    公开(公告)日：2002-04-30

    申请号：US09643534

    申请日：2000-08-22

    申请人： Kyung-Oun Jang

    发明人： Kyung-Oun Jang

    IPC分类号： H02M3335

    CPC分类号： H02M1/32 ,  H02M3/33523

    摘要： A high efficiency switching controller for use in a switching power supply (SPS) includes a current control device coupled to a voltage source of the SPS and a switch connected between the current control device and an output voltage circuit of the SPS. An under voltage lockout regulator coupled to the output voltage circuit of the SPS and the switch controls the state of the switch based on a voltage of the output voltage circuit and a bias unit coupled to the under voltage lockout regulator provides current to circuitry within the switching controller based on the voltage of the output voltage circuit. A protector within the high efficiency switching controller provides a control signal to the pulse width modulator unit to control the gate drive signal in response to an operating condition of the switching controller. Additionally, the control signal can periodically enable the pulse width modulator unit in response to a voltage of the output voltage circuit so that the gate drive signal includes groups of gate drive pulses.

    摘要翻译： 用于开关电源（SPS）的高效率开关控制器包括耦合到SPS的电压源的电流控制装置和连接在电流控制装置和SPS的输出电压电路之间的开关。 耦合到SPS的输出电压电路的欠电压锁定调节器和开关基于输出电压电路的电压来控制开关的状态，并且耦合到欠压锁定调节器的偏置单元向开关内的电路提供电流 控制器基于输出电压电路的电压。 高效率切换控制器内的保护器响应于开关控制器的工作状态向脉冲宽度调制器单元提供控制信号以控制栅极驱动信号。 此外，控制信号可以响应于输出电压电路的电压周期性地使能脉宽调制器单元，使得栅极驱动信号包括一组栅极驱动脉冲。

    EMI cancellation method and system
    10.
    发明授权
    EMI cancellation method and system 有权
    EMI抵消方法和系统

    公开(公告)号：US07289582B2

    公开(公告)日：2007-10-30

    申请号：US10665080

    申请日：2003-09-16

    申请人： Kyung-Oun Jang ,  Eung-Suen Kim

    发明人： Kyung-Oun Jang ,  Eung-Suen Kim

    IPC分类号： H03D1/04

    CPC分类号： H04B15/02 ,  H04B2215/067

    摘要： In an EMI canceller, a control signal generation unit includes a counter, a second flip-flop, and a multiplexer. The counter outputs first and second output signals and includes first flip-flops in series. An output of the first flip-flop reverses at every cycle of the first and second output signals of a previous first flip-flop. An output of the second flip-flop reverses at every cycle of the first or second output signal of a final first flip-flop. The second flip-flop outputs third and fourth output signals. The multiplexer passes the first output signals of the first flip-flop as a control signal when the third output signal is a first level, and passes the second output signals as the control signal when it is a second level.

    摘要翻译： 在EMI消除器中，控制信号生成单元包括计数器，第二触发器和多路复用器。 该计数器输出第一和第二输出信号并且包括串联的第一触发器。 第一触发器的输出在先前的第一触发器的第一和第二输出信号的每个周期反转。 第二触发器的输出在最终的第一触发器的第一或第二输出信号的每个周期反转。 第二触发器输出第三和第四输出信号。 当第三输出信号是第一电平时，多路复用器将第一触发器的第一输出信号作为控制信号传递，并且当第二触发器的第二输出信号为第二电平时，将第二输出信号作为控制信号传递。