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    Image sensor comprising thin film transistor optical sensor having offset region and method of manufacturing the same
    9.
    发明申请
    Image sensor comprising thin film transistor optical sensor having offset region and method of manufacturing the same 有权
    图像传感器包括具有偏移区域的薄膜晶体管光学传感器及其制造方法

    公开(公告)号：US20050029611A1

    公开(公告)日：2005-02-10

    申请号：US10732320

    申请日：2003-12-09

    申请人： Jin Jang ,  Ji Hur ,  Hyun Nam

    发明人： Jin Jang ,  Ji Hur ,  Hyun Nam

    IPC分类号： H01L29/786 ,  H01L27/146 ,  H01L31/0376 ,  H01L31/10 ,  H01L31/0232

    CPC分类号： H01L31/0376 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14692 ,  Y02E10/50

    摘要： The present invention relates to an image sensor comprising an amorphous silicon thin-film transistor optical sensor which functions as an image sensor used for an X-ray photography device, a fingerprint recognition apparatus, a scanner, etc., and a method of manufacturing the image sensor. Since the thin-film transistor optical sensor according to the present invention has a high-resistance silicon region by disposing an offset region in a channel region, a dark leakage current of the optical sensor remains in a low level even under a high voltage. Therefore, it is possible to apply a high voltage to the thin-film transistor optical sensor according to the present invention so that the image senor can be sensitive to a weak light. In addition, since the storage capacitance in the image sensor is formed in a double structure, the image sensor has a high value of capacitance. Furthermore, since a lower common electrode is electrically connected to an upper common electrode, the image sensor has a stable structure.

    摘要翻译： 本发明涉及一种图像传感器，包括用作用于X射线摄影装置的图像传感器，指纹识别装置，扫描仪等的非晶硅薄膜晶体管光学传感器及其制造方法 图像传感器。 由于根据本发明的薄膜晶体管光学传感器通过在沟道区域中设置偏移区域而具有高电阻硅区域，所以即使在高电压下，光学传感器的暗漏电流也保持在低电平。 因此，可以对根据本发明的薄膜晶体管光学传感器施加高电压，使得图像传感器可以对弱光敏感。 此外，由于图像传感器中的存储电容形成为双重结构，所以图像传感器具有高的电容值。 此外，由于下部公共电极与上部公共电极电连接，所以图像传感器具有稳定的结构。