MEMS ACTUATOR, MEMS ACTUATOR DRIVE METHOD, AND MEMS ACTUATOR CONTROL PROGRAM

    公开(公告)号:US20230152573A1

    公开(公告)日:2023-05-18

    申请号:US17916821

    申请日:2021-01-27

    IPC分类号: G02B26/08 B81B7/02

    摘要: A MEMS actuator includes: a drive circuit for applying a drive voltage having a time waveform, which periodically repeats rising and falling and includes a period to be a constant voltage after the rising and before the falling, between a fixed comb electrode and a movable comb electrode; and a timing detection circuit that generates a capacitance derivative signal indicating a derivative value of a capacitance between the fixed comb electrode and the movable comb electrode by converting a current signal, which is output from the fixed comb electrode or the movable comb electrode within the period due to a change in the capacitance, into a voltage signal and detects a timing when the capacitance derivative signal reaches a threshold value. The drive circuit controls a relationship between the timing detected by the timing detection circuit and a timing of the falling to be constant.

    SMELL DETECTION DEVICE AND SMELL DETECTION METHOD

    公开(公告)号:US20220260519A1

    公开(公告)日:2022-08-18

    申请号:US17627248

    申请日:2020-05-19

    IPC分类号: G01N27/414 G01N33/00

    摘要: A smell detection device includes an ion sensor having a sensitive film and outputting an output signal in accordance with a potential change of the sensitive film, a substance adsorption film disposed on the sensitive film and changing its state by adsorbing a smell substance to be detected to cause the potential change of the sensitive film, and an adjuster acquiring the output signal of the ion sensor and adjusting a drive signal for driving the ion sensor to reduce an offset from a predetermined reference value in the output signal.

    INFRARED DETECTION DEVICE
    6.
    发明申请

    公开(公告)号:US20180238733A1

    公开(公告)日:2018-08-23

    申请号:US15550127

    申请日:2015-11-19

    IPC分类号: G01J1/04 H01L27/144 H04N5/225

    摘要: The signal processing board includes a plurality of signal processing circuits configured to process signals output from a plurality of pixels of an infrared detecting element. The signal processing board includes an element placement area where the infrared detecting element is placed, and a circuit placement area positioned outside the element placement area to surround the element placement area when viewed from a direction orthogonal to the signal processing board. The signal processing board includes a plurality of insulating layers that are stacked on a surface side opposing the semiconductor substrate. A plurality of signal processing circuits are placed in the circuit placement area. A heat-conducting layer is placed to be positioned on at least one of the insulating layers and in the element placement area, in the signal processing board. The heat-conducting layer has a heat conductivity that is higher than a heat conductivity of the insulating layers.

    DIFFERENTIAL AMPLIFIER, PIXEL CIRCUIT AND SOLID-STATE IMAGING DEVICE

    公开(公告)号:US20200280694A1

    公开(公告)日:2020-09-03

    申请号:US16754239

    申请日:2018-10-03

    IPC分类号: H04N5/3745 H03F3/45

    摘要: A pixel circuit includes a differential amplifier. The differential amplifier includes a non-inverting input terminal, an inverting input terminal, and an output terminal. The differential amplifier includes an input differential pair including first and second NMOS transistors, a current mirror pair including PMOS transistors, and a constant current source including a fifth NMOS transistor. A threshold voltage of each of the first and second NMOS transistors is higher than a threshold voltage of the fifth NMOS transistor. Further, the threshold voltage of each of the first and second NMOS transistors is higher than a threshold voltage of another NMOS transistor.