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公开(公告)号：US20180180747A1
公开(公告)日：2018-06-28
申请号：US15735389
申请日：2016-07-22
申请人： MITSUBISHI HEAVY INDUSTRIES, LTD. , Japan Aerospace Exploration Agency , HAMAMATSU PHOTONICS K.K.
发明人： Daisuke MATSUURA , Yoshikatsu KURODA , Kei GEMBA , Tadayuki TAKAHASHI , Shin WATANABE , Shin'ichiro TAKEDA , Hiroo YAMAMOTO , KAZUMASA KOSUGI , Kazuhisa Yamamura
摘要： A radiation measuring apparatus (20) includes a scatterer detector (10A), an absorber detector (10B) and a processing unit (12). Pixel electrodes (2) of the scatterer detector (10A) and the absorber detector (10B) are arranged such that a distance between centers of two neighbor pixel electrodes (2) is smaller than a mean free path of a recoil electron generated in the Compton scattering of an electromagnetic radiation. The processing unit (12) specifies and incidence direction of the electromagnetic radiation based on a recoiling direction to which the recoil electron recoils. In this way, an electron tracking-type Compton camera is realized which confines the incidence direction of the electromagnetic radiation by using the recoiling direction of the recoil electron in a Compton camera using a semiconductor detector.
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公开(公告)号：US20200007124A1
公开(公告)日：2020-01-02
申请号：US16490233
申请日：2018-02-07
发明人： Daisuke MATSUURA , Takanori NARITA , Masahiro KATO , Daisuke KOBAYASHI , Kazuyuki HIROSE , Osamu KAWASAKI , Yuya KAKEHASHI , Taichi ITO
IPC分类号： H03K17/687 , H01L27/092 , H01L21/8238
摘要： An operation adjustment method of an SOI device comprises steps of: (a) obtaining a drain current-substrate bias voltage characteristic of an NMOS transistor for a source-gate voltage of 0V; (b) obtaining a lowest substrate bias voltage which turns on the NMOS transistor from the drain current-substrate bias voltage characteristic; (c) determining an upper limit of a substrate bias voltage of a PMOS transistor as a voltage obtained by subtracting a built-in potential of a pn junction from the lowest substrate bias voltage; and (d) determining the substrate bias voltage of the PMOS transistor as a positive voltage lower than the upper limit. Reduction in the power consumption and maintenance of the radiation tolerance are both achieved for the SOI device.
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公开(公告)号：US20180356540A1
公开(公告)日：2018-12-13
申请号：US15575144
申请日：2016-07-22
发明人： Kei GEMBA , Yoshikatsu KURODA , Daisuke MATSUURA , Tadayuki TAKAHASHI , Shin WATANABE , Shin'ichiro TAKEDA
IPC分类号： G01T1/24 , G01T1/29 , H01L27/146 , G01T1/36
CPC分类号： G01T1/243 , G01T1/16 , G01T1/29 , G01T1/2907 , G01T1/2928 , G01T1/361 , H01L27/14676
摘要： A radiation measuring apparatus includes: a plurality of detector modules; and a processing unit. Each of the detector modules includes: a plurality of detectors; a plurality of analog signal processing sections, each of which is provided for a corresponding one of the plurality of detectors to carry out analog-digital conversion to an analog signal obtained from the corresponding detector to generate digital measurement data corresponding to the analog signal; and a digital processing section configured to transmit to the processing unit, digital communication data generated from the digital measurement data received from the plurality of analog signal processing sections. Each of the plurality of detectors is a scatterer detector functioning as a scatterer or an absorber detector functioning as an absorber. The processing unit generates a radiation source distribution image showing a spatial distribution of radiation sources based on the digital communication data received from the of detector modules.
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公开(公告)号：US20170212254A1
公开(公告)日：2017-07-27
申请号：US15329770
申请日：2015-07-31
发明人： Kei GEMBA , Yoshikatsu KURODA , Hiroshi IKEBUCHI , Daisuke MATSUURA , Tadayuki TAKAHASHI , Shin WATANABE , Shin'ichiro TAKEDA
IPC分类号： G01T1/29
摘要： A detector for a Compton camera includes a first radiation scattering layer; a second radiation scattering layer; and a radiation absorption layer disposed between the first radiation scattering layer and the second radiation scattering layer. The first radiation scattering layer and the radiation absorption layer configure at least a part of a first detector, and the second radiation scattering layer and the radiation absorption layer configure at least a part of a second detector.
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公开(公告)号：US20210210135A1
公开(公告)日：2021-07-08
申请号：US17057428
申请日：2019-10-11
发明人： Yoshiharu MORI , Masaki KUSANO , Daisuke MATSUURA , Daisuke KOBAYASHI , Kazuyuki HIROSE , Osamu KAWASAKI
IPC分类号： G11C11/417 , G11C29/50
摘要： The purpose of the invention is to compensate for the radiation tolerance of a semiconductor memory. An apparatus (10) for compensating for radiation tolerance comprises: a voltage value acquisition unit (11) that acquires a data retention voltage value that is a maximum voltage value at which data is inverted when a power supply voltage of a semiconductor memory having a latch circuit is lowered; a correction value determination unit (12) that determines a voltage correction value on the basis of a difference between the data retention voltage value and a reference voltage value; and a voltage adjustment unit (13) that adjusts at least one among the power supply voltage and a substrate bias voltage by using the voltage correction value. The reference voltage value is set to be equal to or lower than the data retention voltage value that satisfies a required radiation tolerance.
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公开(公告)号：US20210099180A1
公开(公告)日：2021-04-01
申请号：US16970750
申请日：2019-06-05
发明人： Takanori NARITA , Daisuke MATSUURA , Shigeru ISHII , Daisuke KOBAYASHI , Kazuyuki HIROSE , Osamu KAWASAKI
IPC分类号： H03L7/093 , H03K5/1252 , H03H11/26 , H03K5/131
摘要： A semiconductor device includes first to N-th PLL circuits configured to operate in synchronization with a common reference clock signal to output first to N-th clock signals, respectively; a majority circuit that performs a majority operation on the first to N-th clock signals to generate a majority clock signal; and a filter circuit to which the majority clock signal is provided, the filter circuit operating as a low-pass filter to output an output clock signal. N is an odd number of three or more.
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公开(公告)号：US20170011984A1
公开(公告)日：2017-01-12
申请号：US15117805
申请日：2015-03-18
发明人： Daisuke MATSUURA , Yoshikatsu KURODA , Kei GEMBA
IPC分类号： H01L23/367 , B64G1/58 , H01L27/092 , B64G1/10 , G01J5/00 , H01L23/38
CPC分类号： H01L23/367 , B64G1/10 , B64G1/50 , B64G1/503 , B64G1/546 , B64G1/58 , F25B21/02 , F25B2321/0212 , G01J5/0007 , G01T1/244 , H01L23/34 , H01L23/38 , H01L27/092 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor integrated circuit, a radiation detection unit and a cooling unit are provided. Here, a radiation detection unit is provided near the semiconductor integrated circuit and detects a radiation quantity. The cooling unit cools the semiconductor integrated circuit according to the detected radiation quantity. In an environment where a radiation quantity is more, the generation of a malfunction can be restrained by cooling the semiconductor integrated circuit.
摘要翻译： 提供半导体集成电路，放射线检测单元和冷却单元。 这里，辐射检测单元设置在半导体集成电路附近并检测辐射量。 冷却单元根据检测到的辐射量冷却半导体集成电路。 在辐射量更多的环境中，可以通过冷却半导体集成电路来抑制故障的产生。
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