公开(公告)号：US09972729B2

公开(公告)日：2018-05-15

申请号：US15434373

申请日：2017-02-16

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuhisa Yamamura ,  Akira Sakamoto ,  Terumasa Nagano ,  Yoshitaka Ishikawa ,  Satoshi Kawai

IPC: H01L31/02 ,  H01L31/0236 ,  H01L27/144 ,  H01L31/028 ,  H01L31/107 ,  H01L31/18

CPC classification number: H01L31/02366 ,  H01L27/1446 ,  H01L27/1464 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/107 ,  H01L31/1804 ,  Y02E10/547

Abstract: A p− type semiconductor substrate 20 has a first principal surface 20a and a second principal surface 20b opposed to each other and includes a photosensitive region 21. The photosensitive region 21 is composed of an n+ type impurity region 23, a p+ type impurity region 25, and a region to be depleted with application of a bias voltage in the p− type semiconductor substrate 20. An irregular asperity 10 is formed in the second principal surface 20b of the p− type semiconductor substrate 20. An accumulation layer 37 is formed on the second principal surface 20b side of the p− type semiconductor substrate 20 and a region in the accumulation layer 37 opposed to the photosensitive region 21 is optically exposed.

公开(公告)号：US08994135B2

公开(公告)日：2015-03-31

申请号：US14138950

申请日：2013-12-23

Applicant: Hamamatsu Photonics K.K.

Inventor： Kazuhisa Yamamura ,  Akira Sakamoto ,  Terumasa Nagano ,  Yoshitaka Ishikawa ,  Satoshi Kawai

IPC: H01L31/0232 ,  H01L27/146 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/103 ,  H01L31/107

CPC classification number: H01L27/1464 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14649 ,  H01L27/14689 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/103 ,  H01L31/107 ,  H01L2224/48091 ,  Y02E10/50 ,  H01L2924/00014

Abstract: A photodiode array PDA1 is provided with a substrate S wherein a plurality of photodetecting channels CH have an n-type semiconductor layer 32. The photodiode array PDA1 is provided with a p− type semiconductor layer 33 formed on the n-type semiconductor layer 32, resistors 24 provided for the respective photodetecting channels CH and each having one end portion connected to a signal conducting wire 23, and an n-type separating portion 40 formed between the plurality of photodetecting channels CH. The p− type semiconductor layer 33 forms pn junctions at an interface to the n-type semiconductor layer 32 and has a plurality of multiplication regions AM for avalanche multiplication of carriers generated with incidence of detection target light, corresponding to the respective photodetecting channels. An irregular asperity 10 is formed in a surface of the n-type semiconductor layer 32 and the surface is optically exposed.

Abstract translation: 光电二极管阵列PDA1设置有基板S，其中多个受光通道CH具有n型半导体层32.光电二极管阵列PDA1设置有形成在n型半导体层32上的p型半导体层33，电阻 设置在相应的光检测通道CH上，每个具有连接到信号导线23的一个端部，以及形成在多个光电检测通道CH之间的n型分离部分40。 p型半导体层33在与n型半导体层32的界面处形成pn结，并且具有多个乘法区域AM，用于对应于各个受光通道而与检测目标光入射产生的载流子的雪崩乘法。 在n型半导体层32的表面上形成不规则的凹凸10，并且该表面被光学曝光。

公开(公告)号：US20220028906A1

公开(公告)日：2022-01-27

申请号：US17499135

申请日：2021-10-12

Applicant: Hamamatsu Photonics K.K.

Inventor： Kazuto Ofuji ,  Masashi Ito ,  Katsumi Shibayama ,  Akira Sakamoto

IPC: H01L27/146

Abstract: Provided a semiconductor light detection element including: a semiconductor portion having a front surface including a light reception region that receives incident light and photoelectrically converting the incident light incident on the light reception region; a metal portion provided on the front surface; and a carbon nanotube film provided on the light reception region and formed by depositing a plurality of carbon nanotubes. The carbon nanotube film extends over an upper surface of the metal portion from an upper surface of the light reception region.

公开(公告)号：US10461115B2

公开(公告)日：2019-10-29

申请号：US14646406

申请日：2013-11-26

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsumi Yamanaka ,  Akira Sakamoto ,  Noburo Hosokawa

IPC: H01L27/146 ,  H01L27/10 ,  H01L31/103 ,  H01L31/0224 ,  H01L31/10

Abstract: A photodiode array includes a plurality of photodiodes formed in a semiconductor substrate. Each of the photodiodes includes a first semiconductor region of a first conductivity type, and provided in the semiconductor substrate, a second semiconductor region of a second conductivity type, provided with respect to the first semiconductor region on one surface side of the semiconductor substrate so as to surround a predetermined region, and constituting a light detection region together with the first semiconductor region, and a through-electrode provided within a through-hole passing through the one surface and the other surface of the semiconductor substrate so as to pass through the first semiconductor region and the predetermined region, and electrically connected to the second semiconductor region. The through-hole includes a portion expanded from the one surface toward the other surface.

公开(公告)号：US10418496B2

公开(公告)日：2019-09-17

申请号：US14647263

申请日：2013-11-26

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsumi Yamanaka ,  Akira Sakamoto ,  Noburo Hosokawa

IPC: H01L27/146 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/103

Abstract: A photodiode array includes a plurality of photodiodes formed in a semiconductor substrate. Each of the photodiodes includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, provided with respect to the first semiconductor region on one surface side of the semiconductor substrate, and having an impurity concentration higher than an impurity concentration of the first semiconductor region, a third semiconductor region of a second conductivity type, provided with respect to the first semiconductor region on the one surface side so as to surround the second semiconductor region separately from the second semiconductor region, and constituting a light detection region together with the first semiconductor region, and a through-electrode provided within a through-hole passing through the first semiconductor region and the second semiconductor region, and electrically connected to the third semiconductor region.

公开(公告)号：US08993361B2

公开(公告)日：2015-03-31

申请号：US14012273

申请日：2013-08-28

Applicant: Hamamatsu Photonics K.K.

Inventor： Hiroshi Oguri ,  Yoshitaka Ishikawa ,  Akira Sakamoto ,  Tomoya Taguchi ,  Yoshimaro Fujii

IPC: H01L21/00 ,  H01L31/0232 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/103 ,  H01L31/18

CPC classification number: H01L27/14632 ,  H01L27/1446 ,  H01L27/14603 ,  H01L27/1463 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/0352 ,  H01L31/03529 ,  H01L31/103 ,  H01L31/18 ,  Y02E10/50

Abstract: A manufacturing method for an edge illuminated type photodiode has: a process of forming an impurity-doped layer of a first conductivity type in each of device forming regions in a semiconductor substrate; a process of forming an impurity-doped layer of a second conductivity type in each of the device forming regions; a process of forming a trench extending in a direction of thickness of the semiconductor substrate from a principal surface, at a position of a boundary between adjacent device forming regions, by etching to expose side faces of the device forming regions; a process of forming an insulating film on the exposed side faces of the device forming regions; a process of forming an electrode for each corresponding impurity-doped layer on the principal surface side of the semiconductor substrate; and a process of implementing singulation of the semiconductor substrate into the individual device forming regions.

Abstract translation: 边缘照明型光电二极管的制造方法具有：在半导体衬底中的器件形成区域的每一个中形成第一导电类型的杂质掺杂层的工序; 在每个器件形成区域中形成第二导电类型的杂质掺杂层的工艺; 在相邻的器件形成区域的边界的位置处，通过蚀刻从主表面形成在半导体衬底的厚度方向上延伸的沟槽的工艺，以暴露器件形成区域的侧面; 在器件形成区域的露出侧面上形成绝缘膜的工序; 在半导体衬底的主表面侧上形成用于每个对应的杂质掺杂层的电极的工艺; 以及将半导体衬底分离成单个器件形成区域的过程。

公开(公告)号：US09614109B2

公开(公告)日：2017-04-04

申请号：US14683524

申请日：2015-04-10

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuhisa Yamamura ,  Akira Sakamoto ,  Terumasa Nagano ,  Yoshitaka Ishikawa ,  Satoshi Kawai

IPC: H01L31/062 ,  H01L31/0236 ,  H01L27/144 ,  H01L31/107 ,  H01L31/18 ,  H01L27/146

CPC classification number: H01L31/02366 ,  H01L27/1446 ,  H01L27/1464 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/107 ,  H01L31/1804 ,  Y02E10/547

Abstract: A p− type semiconductor substrate 20 has a first principal surface 20a and a second principal surface 20b opposed to each other and includes a photosensitive region 21. The photosensitive region 21 is composed of an n+ type impurity region 23, a p+ type impurity region 25, and a region to be depleted with application of a bias voltage in the p− type semiconductor substrate 20. An irregular asperity 10 is formed in the second principal surface 20b of the p− type semiconductor substrate 20. An accumulation layer 37 is formed on the second principal surface 20b side of the p− type semiconductor substrate 20 and a region in the accumulation layer 37 opposed to the photosensitive region 21 is optically exposed.

公开(公告)号：US09419159B2

公开(公告)日：2016-08-16

申请号：US14073249

申请日：2013-11-06

Applicant: Hamamatsu Photonics K.K.

Inventor： Akira Sakamoto ,  Takashi Iida ,  Koei Yamamoto ,  Kazuhisa Yamamura ,  Terumasa Nagano

IPC: H01L31/0236 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/02366 ,  H01L27/1446 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Prepared is an n− type semiconductor substrate 1 having a first principal surface 1a and a second principal surface 1b opposed to each other, and having a p+ type semiconductor region 3 formed on the first principal surface 1a side. At least a region opposed to the p+ type semiconductor region 3 in the second principal surface 1b of the n− type semiconductor substrate 1 is irradiated with a pulsed laser beam to form an irregular asperity 10. After formation of the irregular asperity 10, an accumulation layer 11 with an impurity concentration higher than that of the n− type semiconductor substrate 1 is formed on the second principal surface 1b side of the n− type semiconductor substrate 1. After formation of the accumulation layer 11, the n− type semiconductor substrate 1 is subjected to a thermal treatment.

Abstract translation: 制备的n型半导体衬底1具有彼此相对的第一主表面1a和第二主表面1b，并且具有形成在第一主表面1a侧上的p +型半导体区域3。 在n型半导体衬底1的第二主表面1b中至少与p +型半导体区域3相对的区域用脉冲激光束照射以形成不规则凹凸。在形成不规则凹凸10之后，积累 在n型半导体衬底1的第二主表面1b侧上形成杂质浓度高于n型半导体衬底1的层11。在形成蓄积层11之后，n型半导体衬底1 进行热处理。

公开(公告)号：US11205676B2

公开(公告)日：2021-12-21

申请号：US16491193

申请日：2018-03-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuto Ofuji ,  Masashi Ito ,  Katsumi Shibayama ,  Akira Sakamoto

IPC: H01L27/148

Abstract: Provided a semiconductor light detection element including: a semiconductor portion having a front surface including a light reception region that receives incident light and photoelectrically converting the incident light incident on the light reception region; a metal portion provided on the front surface; and a carbon nanotube film provided on the light reception region and formed by depositing a plurality of carbon nanotubes. The carbon nanotube film extends over an upper surface of the metal portion from an upper surface of the light reception region.

公开(公告)号：US09385151B2

公开(公告)日：2016-07-05

申请号：US14627238

申请日：2015-02-20

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hiroshi Oguri ,  Yoshitaka Ishikawa ,  Akira Sakamoto ,  Tomoya Taguchi ,  Yoshimaro Fujii

IPC: H01L27/148 ,  H01L29/768 ,  H01L27/146 ,  H01L27/144 ,  H01L31/0232 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/103 ,  H01L31/18

CPC classification number: H01L27/14632 ,  H01L27/1446 ,  H01L27/14603 ,  H01L27/1463 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/0352 ,  H01L31/03529 ,  H01L31/103 ,  H01L31/18 ,  Y02E10/50

Abstract: A manufacturing method for an edge illuminated type photodiode has: a process of forming an impurity-doped layer of a first conductivity type in each of device forming regions in a semiconductor substrate; a process of forming an impurity-doped layer of a second conductivity type in each of the device forming regions; a process of forming a trench extending in a direction of thickness of the semiconductor substrate from a principal surface, at a position of a boundary between adjacent device forming regions, by etching to expose side faces of the device forming regions; a process of forming an insulating film on the exposed side faces of the device forming regions; a process of forming an electrode for each corresponding impurity-doped layer on the principal surface side of the semiconductor substrate; and a process of implementing singulation of the semiconductor substrate into the individual device forming regions.