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1.发明公开公开(公告)号：US20240218005A1
公开(公告)日：2024-07-04
申请号：US18254390
申请日：2021-12-17
发明人： Min-Sung PARK , Hyo-Suk KIM , Min-Hyuk NIM , Jang-Hyeon SEOK , Jung-Woo PARK
IPC分类号： C07F15/06 , C23C16/18 , C23C16/455
CPC分类号： C07F15/06 , C23C16/18 , C23C16/45553
摘要： The present disclosure relates to a vapor deposition compound capable of being deposited into a thin film through vapor deposition. Specifically, the present disclosure relates to a novel compound applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and having excellent reactivity, volatility, and thermal stability, a precursor composition containing the novel compound, a method of forming a thin film using the precursor composition, and a thin film formed using the precursor composition.
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公开(公告)号：US20230312614A1
公开(公告)日：2023-10-05
申请号：US18025017
申请日：2021-09-06
发明人： Hyun-Kee KIM , Cheol-Wan PARK , Ki-Yeung MUN , Ee-Seul SHIN , Eun-Jeong CHO , Jang-Hyeon SEOK , Jung-Woo PARK
IPC分类号： C07F7/00 , C07F7/28 , C23C16/455 , C23C16/40 , C23C16/44
CPC分类号： C07F7/00 , C07F7/28 , C23C16/45553 , C23C16/405 , C23C16/40 , C23C16/44
摘要： The present disclosure relates to a novel Group 4 metal element-containing compound having excellent thermal stability, a precursor composition including the compound, and a method for manufacturing a thin film using the precursor composition. The novel Group 4 metal element-containing compound according to the present disclosure and the vapor deposition precursor composition including the compound can have excellent thermal stability, realize thin film deposition in a wide temperature range, and reduce residues caused by heat loss, thereby preventing side reactions in a process. Additionally, the vapor deposition precursor composition according to the present disclosure can realize uniform thin film deposition, thereby securing excellent physical properties of the thin film.
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公开(公告)号：US20230146033A1
公开(公告)日：2023-05-11
申请号：US17918429
申请日：2021-04-14
发明人： Hyun-Kyung LEE , Jang-Hyeon SEOK , Jung-Woo PARK , Jin-Seong PARK , Tae Hyun HONG , Jiazhen SHENG , Minjung KIM
IPC分类号： H01L21/02 , H01L29/786
CPC分类号： H01L21/0262 , H01L21/02565 , H01L21/02664 , H01L29/7869
摘要： A method for manufacturing a semiconductor layer is provided. The method for manufacturing a semiconductor layer may include preparing a substrate, and conducting a first unit process of reacting a first precursor including indium (In) and a first reaction source and a second unit process of reacting a second precursor including gallium (Ga) and a second reaction source to form a semiconductor layer including the indium and the gallium on the substrate.
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公开(公告)号：US20220356198A1
公开(公告)日：2022-11-10
申请号：US17722654
申请日：2022-04-18
发明人： Jin-Hyung SEO , Mi-Ra PARK , Jang-Hyeon SEOK , Jung-Woo PARK , Hyung-Jun KIM , Tae-Wook NAM , Yu-Jin LEE
IPC分类号： C07F17/00
摘要： The present invention relates to a method for producing a high yield of an organometallic compound including a step of allowing a metal hexacarbonyl compound to react with a hexahydro-1,3,5-triazine compound, and a thin film having excellent properties, fabricated by depositing the produced organometallic compound.
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5.发明申请公开(公告)号：US20210277031A1
公开(公告)日：2021-09-09
申请号：US16497973
申请日：2019-04-24
发明人： Jae-Seok AN , Jong-Ryul PARK , Min-Hyuk NIM , Jang-Hyeon SEOK , Jung Woo PARK
IPC分类号： C07F7/10 , C23C16/40 , C23C16/455 , H01L21/02
摘要： The present invention relates to a vapor deposition compound capable of thin film deposition through vapor deposition, and particularly to a silicon precursor capable of being applied to ALD or CVD, and specifically, enabling high temperature deposition, and a method of manufacturing a silicon-containing thin film.
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6.发明公开公开(公告)号：US20230257406A1
公开(公告)日：2023-08-17
申请号：US18017921
申请日：2020-08-03
发明人： Hyo-Suk KIM , Min-Sung PARK , Min-Hyuk NIM , Jang-Hyeon SEOK , Jung-Woo PARK
IPC分类号： C07F13/00
CPC分类号： C07F13/00
摘要： The present invention relates to a vapor deposition compound capable of being deposited as a thin film through vapor deposition and, in particular, to: an organometal-containing compound which can be applied to an atomic layer deposition (ALD) method or a chemical vapor deposition (CVD) method and has excellent reactivity, volatility, and thermal stability; a precursor composition comprising the organometallic compound; a method for manufacturing a thin film using the precursor composition; and an organometal-containing thin film manufactured using the precursor composition.
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7.发明申请公开(公告)号：US20220144861A1
公开(公告)日：2022-05-12
申请号：US16627241
申请日：2018-12-27
发明人： Jung-Woo PARK , Jang-Hyeon SEOK , Hyo-Suk KIM , Eun-Jeong CHO
摘要： The present invention relates to a compound that is capable of being used in thin-film deposition using vapor deposition. Particularly, the present invention relates to a rare earth compound, which is capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and which has excellent thermal stability and reactivity, a rare earth precursor including the same, a method of manufacturing the same, and a method of forming a thin film using the same.
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8.发明申请公开(公告)号：US20210332074A1
公开(公告)日：2021-10-28
申请号：US16627243
申请日：2018-12-27
发明人： Jung-Woo PARK , Jang-Hyeon SEOK , Hyo-Suk KIM , Ming-Sung PARK
IPC分类号： C07F15/06 , C23C16/18 , C23C16/455
摘要： The present invention relates to a vapor deposition compound enabling thin-film deposition through vapor deposition, and more particularly to a novel cobalt precursor, which can be applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and exhibits superior reactivity, volatility and thermal stability, a method of preparing the same and a method of manufacturing a thin film using the same.
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