PLATFORM ERROR CORRECTION
    1.
    发明申请
    PLATFORM ERROR CORRECTION 有权
    平台错误修正

    公开(公告)号:US20160092306A1

    公开(公告)日:2016-03-31

    申请号:US14498616

    申请日:2014-09-26

    CPC classification number: G06F11/1076 G06F11/106

    Abstract: An example device in accordance with an aspect of the present disclosure includes a first error corrector to perform platform error correction based on a stride length. A memory includes a second error corrector that is to perform on-memory error correction that is to be disabled for platform error correction.

    Abstract translation: 根据本公开的一个方面的示例性装置包括:第一误差校正器,用于基于步幅长度执行平台误差校正。 存储器包括第二错误校正器,其将执行对于平台错误校正被禁用的存储器内部错误校正。

    Platform error correction
    4.
    发明授权
    Platform error correction 有权
    平台纠错

    公开(公告)号:US09442801B2

    公开(公告)日:2016-09-13

    申请号:US14498616

    申请日:2014-09-26

    CPC classification number: G06F11/1076 G06F11/106

    Abstract: An example device includes a first error corrector to perform platform error correction based on a stride length. A memory includes a second error corrector that is to perform on-memory error correction that is to be disabled for platform error correction.

    Abstract translation: 示例性装置包括第一误差校正器,用于基于步幅长度来执行平台纠错。 存储器包括第二错误校正器,其将执行对于平台错误校正被禁用的存储器内部错误校正。

    Delaying Bus Activity To Accomodate Memory Device Processing Time
    5.
    发明申请
    Delaying Bus Activity To Accomodate Memory Device Processing Time 审中-公开
    延迟总线活动以适应内存设备处理时间

    公开(公告)号:US20140359181A1

    公开(公告)日:2014-12-04

    申请号:US13906375

    申请日:2013-05-31

    CPC classification number: G06F13/1689

    Abstract: A technique includes delaying bus activity targeting a memory device and indicating a command for the memory device to allow time for the memory device to complete processing the command. The delaying of the bus activity includes selectively generating an error signal on a memory bus.

    Abstract translation: 一种技术包括延迟针对存储器设备的总线活动,并指示存储器设备的命令以允许存储器设备的时间来完成对命令的处理。 总线活动的延迟包括在存储器总线上选择性地产生误差信号。

    Dual Inline Memory Module Socket
    8.
    发明申请
    Dual Inline Memory Module Socket 审中-公开
    双列直插式内存模块插座

    公开(公告)号:US20150004824A1

    公开(公告)日:2015-01-01

    申请号:US13931286

    申请日:2013-06-28

    CPC classification number: G01R31/041 H01R12/7029 H01R13/641

    Abstract: The present disclosure describes, in one example, a dual inline memory module socket. The dual inline memory module socket includes a base to receive a memory module. The base further comprises a first detection pin and a second detection pin. A latch may be coupled to the base and is to electrically couple the first detection pin to the second detection pin in a dosed position to enable a determination that the memory module is properly seated.

    Abstract translation: 本公开在一个示例中描述了双列直插存储器模块插座。 双列直插式内存模块插座包括一个接收内存模块的基座。 基座还包括第一检测引脚和第二检测引脚。 闩锁可以联接到基座并且将电子耦合到处于计量位置的第一检测销到第二检测销,以使得可以确定存储器模块正确就位。

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