Abstract:
An example device in accordance with an aspect of the present disclosure includes a first error corrector to perform platform error correction based on a stride length. A memory includes a second error corrector that is to perform on-memory error correction that is to be disabled for platform error correction.
Abstract:
A technique includes monitoring activation rates of a plurality of memory locations associated with a plurality of memory addresses and regulating the activation rates. The regulating includes selectively updating a cache with the memory addresses based on the activation rates.
Abstract:
A computing system can include a processor and a memory. The computing system can also include a memory controller to interface between the processor and the memory. The memory controller coalesces requests to access a memory row to form a single request to access the memory row.
Abstract:
An example device includes a first error corrector to perform platform error correction based on a stride length. A memory includes a second error corrector that is to perform on-memory error correction that is to be disabled for platform error correction.
Abstract:
A technique includes delaying bus activity targeting a memory device and indicating a command for the memory device to allow time for the memory device to complete processing the command. The delaying of the bus activity includes selectively generating an error signal on a memory bus.
Abstract:
A technique includes receiving, by a device a command, wherein a response to the command is expected from the device within a predetermined response time. The device may selectively generate an error signal to allow time for the device to complete processing the command.
Abstract:
A technique includes accessing error information generated in response to memory errors of a memory device. The error information generated in response to the memory errors of the memory device may then be determined as indicative of a row hammer error for the memory device.
Abstract:
The present disclosure describes, in one example, a dual inline memory module socket. The dual inline memory module socket includes a base to receive a memory module. The base further comprises a first detection pin and a second detection pin. A latch may be coupled to the base and is to electrically couple the first detection pin to the second detection pin in a dosed position to enable a determination that the memory module is properly seated.