公开(公告)号：US20170092653A1

公开(公告)日：2017-03-30

申请号：US15379286

申请日：2016-12-14

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Chaw Sing Ho ,  Reynaldo V. Villavelez ,  Xin Ping Cao

IPC: H01L27/11521 ,  B41J2/14 ,  H01L29/51 ,  H01L29/788 ,  H01L21/28 ,  H01L29/423

CPC classification number: H01L27/11521 ,  B41J2/1433 ,  H01L21/28273 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/513 ,  H01L29/518 ,  H01L29/788 ,  H01L29/7881

Abstract: In some examples, a fluid ejection device includes a substrate and a memory cell on the substrate, the memory cell including a first dielectric layer, a floating gate, a second dielectric layer, and a control gate. The memory cell includes a channel region between a drain region and a source region. The first dielectric layer is over the channel region and the floating gate is capacitively coupled to the channel region through the first dielectric layer. The floating gate includes a polysilicon layer, a metal layer, and a second dielectric layer between the polysilicon layer and the metal layer, where the second dielectric layer includes an opening through which the polysilicon layer is electrically connected to the metal layer.

公开(公告)号：US20210331488A1

公开(公告)日：2021-10-28

申请号：US16603577

申请日：2018-07-11

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Reynaldo V. Villavelez

IPC: B41J2/335 ,  B41J2/345

Abstract: In some examples, a thermal imaging head includes a resistor and conductors connected to end portions of the resistor to pass an electrical current through the resistor. The resistor includes gaps at the end portions of the resistor, each gap of the gaps reducing a cross-sectional area of a respective end portion of the end portions of the resistor relative to a cross-sectional area of a central portion of the resistor.

公开(公告)号：US10319728B2

公开(公告)日：2019-06-11

申请号：US15379286

申请日：2016-12-14

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Chaw Sing Ho ,  Reynaldo V. Villavelez ,  Xin Ping Cao

IPC: H01L27/11524 ,  H01L27/11521 ,  H01L29/788 ,  H01L29/423 ,  B41J2/14 ,  H01L21/28 ,  H01L29/51

Abstract: In some examples, a fluid ejection device includes a substrate and a memory cell on the substrate, the memory cell including a first dielectric layer, a floating gate, a second dielectric layer, and a control gate. The memory cell includes a channel region between a drain region and a source region. The first dielectric layer is over the channel region and the floating gate is capacitively coupled to the channel region through the first dielectric layer. The floating gate includes a polysilicon layer, a metal layer, and a second dielectric layer between the polysilicon layer and the metal layer, where the second dielectric layer includes an opening through which the polysilicon layer is electrically connected to the metal layer.

公开(公告)号：US20170062449A1

公开(公告)日：2017-03-02

申请号：US15352449

申请日：2016-11-15

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Reynaldo V. Villavelez ,  Paul I. Mikulan

IPC: H01L27/115 ,  H01L29/08 ,  B41J2/045 ,  H01L29/10 ,  H01L29/788 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L27/11524 ,  B41J2/04541 ,  B41J2/04586 ,  G11C16/10 ,  H01L27/11519 ,  H01L27/11521 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/40114 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/788 ,  H01L29/7884

Abstract: A memory cell for a printhead includes a substrate with a source and a drain. The substrate further includes a channel located between the source and the drain and surrounding the drain. The drain can include a first rounded closed curved structure. The memory cell can include a floating gate and a control gate. The floating gate can include a second rounded closed curve structure located above the channel and below the control gate. The control gate is capacitively coupled to the floating gate.

Abstract translation: 用于打印头的存储单元包括具有源极和漏极的衬底。 衬底还包括位于源极和漏极之间并且围绕漏极的沟道。 排水管可以包括第一圆形闭合弯曲结构。 存储单元可以包括浮动栅极和控制栅极。 浮动门可以包括位于通道上方和控制门下方的第二圆形闭合曲线结构。 控制栅极电容耦合到浮动栅极。