公开(公告)号：US10511386B2

公开(公告)日：2019-12-17

申请号：US15976920

申请日：2018-05-11

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Wayne V. Sorin ,  Michael Renne Ty Tan ,  Shih-Yuan Wang

IPC: G02B6/42 ,  G02B6/26 ,  H04B10/2581 ,  G02B6/028 ,  G02B6/02 ,  G02B6/293 ,  G02B6/00

Abstract: Examples include generating a signal using a modulatable source. The signal may be propagated using a multi-mode fiber to receive the signal from the modulatable source. The fiber has a diameter d and a far-field divergence angle associated with the propagated signal that corresponds to a product of the diameter (d) and the far-field divergence angle. The product may be substantially between 1 micron radian and 4 micron radian. In some examples, the propagated signal may be received at a receiver from the multi-mode fiber.

公开(公告)号：US20180269973A1

公开(公告)日：2018-09-20

申请号：US15976920

申请日：2018-05-11

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Wayne V. Sorin ,  Michael Renne Ty Tan ,  Shih-Yuan Wang

IPC: H04B10/2581 ,  G02B6/293 ,  G02B6/42 ,  G02B6/00 ,  G02B6/26 ,  G02B6/028 ,  G02B6/02

CPC classification number: H04B10/2581 ,  G02B6/00 ,  G02B6/02214 ,  G02B6/0288 ,  G02B6/26 ,  G02B6/29365 ,  G02B6/2938 ,  G02B6/42 ,  G02B6/4215

Abstract: Examples include generating a signal using a modulatable source. The signal may be propagated using a multi-mode fiber to receive the signal from the modulatable source. The fiber has a diameter d and a far-field divergence angle associated with the propagated signal that corresponds to a product of the diameter (d) and the far-field divergence angle. The product may be substantially between 1 micron radian and 4 micron radian. In some examples, the propagated signal may be received at a receiver from the multi-mode fiber.

公开(公告)号：US09793473B2

公开(公告)日：2017-10-17

申请号：US14914808

申请日：2013-09-05

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Shih-Yuan Wang ,  Jianhua Yang ,  Minxian Max Zhang ,  Alexandre M. Bratkovski ,  R. Stanley Williams

IPC: H01L47/00 ,  H01L45/00

CPC classification number: H01L45/1253 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/148 ,  H01L45/1608

Abstract: A memristor structure may be provided that includes a first electrode, a second electrode, and a buffer layer disposed on the first electrode. The memristor structure may include a switching layer interposed between the second electrode and the buffer layer to form, when a voltage is applied, a filament or path that extends from the second electrode to the buffer layer and to form a Schottky-like contact or a heterojunction between the filament and the buffer layer.

公开(公告)号：US20160240729A1

公开(公告)日：2016-08-18

申请号：US14988474

申请日：2016-01-05

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Michael Renne Ty Tan ,  David A. Fattal ,  Marco Fiorentino ,  Shih-Yuan Wang

IPC: H01L33/06 ,  H01L33/30 ,  H01L33/00 ,  H01L33/40

CPC classification number: H01L33/06 ,  H01L33/0062 ,  H01L33/02 ,  H01L33/04 ,  H01L33/20 ,  H01L33/30 ,  H01L33/387 ,  H01L33/40 ,  H01L2933/0016

Abstract: A light emitting diode includes a diode structure containing a quantum well, an enhancement layer, and a barrier layer between the enhancement layer and the quantum well. The enhancement layer supports plasmon oscillations at a frequency that couples to photons produced by combination of electrons and holes in the quantum well. The barrier layer serves to block diffusion between the enhancement layer and the diode structure.

Abstract translation: 发光二极管包括在增强层和量子阱之间包含量子阱，增强层和阻挡层的二极管结构。 增强层以耦合到量子阱中电子和空穴的组合产生的光子的频率支持等离子体振荡。 阻挡层用于阻止增强层和二极管结构之间的扩散。

公开(公告)号：US09991961B2

公开(公告)日：2018-06-05

申请号：US15230317

申请日：2016-08-05

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Wayne V Sorin ,  Michael Renne Ty Tan ,  Shih-Yuan Wang

IPC: G02B6/26 ,  H04B10/2581 ,  G02B6/028 ,  G02B6/293 ,  G02B6/02

CPC classification number: H04B10/2581 ,  G02B6/00 ,  G02B6/02214 ,  G02B6/0288 ,  G02B6/26 ,  G02B6/29365 ,  G02B6/2938 ,  G02B6/42 ,  G02B6/4215

Abstract: Examples include generating a signal using a modulatable source. The signal may be propagated using a multi-mode fiber to receive the signal from the modulatable source. The fiber has a diameter d and a far-field divergence angle associated with the propagated signal that corresponds to a product of the diameter (d) and the far-field divergence angle. The product may be substantially between 1 micron radian and 4 micron radian. In some examples, the propagated signal may be received at a receiver from the multi-mode fiber.

公开(公告)号：US20160225823A1

公开(公告)日：2016-08-04

申请号：US14916766

申请日：2013-09-16

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Shih-Yuan Wang ,  Jianhua Yang ,  R. Stanley Williams

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2463 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1683

Abstract: A switching resistance memory device with an interfacial channel includes a stack made of a layer of a first material and a layer of a second material. The layers form an interface, with the interface comprising the interfacial channel along which charged species can travel. A first electrode contacts a first edge of the stack, and a second electrode contacts a second edge of the stack.

Abstract translation: 具有界面通道的开关电阻存储器件包括由第一材料层和第二材料层构成的叠层。 这些层形成界面，其界面包括带电物种可以沿其移动的界面通道。 第一电极接触堆叠的第一边缘，并且第二电极接触堆叠的第二边缘。

公开(公告)号：US20160218285A1

公开(公告)日：2016-07-28

申请号：US14914808

申请日：2013-09-05

Applicant: HEWLETT-PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Shih-Yuan Wang ,  Jianhua Yang ,  Minxian Max Zhang ,  Alexandre M. Bratkovski ,  R. Stanley Williams

IPC: H01L45/00

CPC classification number: H01L45/1253 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/148 ,  H01L45/1608

Abstract: A memristor structure may be provided that includes a first electrode, a second electrode, and a buffer layer disposed on the first electrode. The memristor structure may include a switching layer interposed between the second electrode and the buffer layer to form, when a voltage is applied, a filament or path that extends from the second electrode to the buffer layer and to form a Schottky-like contact or a heterojunction between the filament and the buffer layer.

Abstract translation: 可以提供一种忆阻器结构，其包括设置在第一电极上的第一电极，第二电极和缓冲层。 忆阻器结构可以包括插入在第二电极和缓冲层之间的开关层，当施加电压时，形成从第二电极延伸到缓冲层并形成肖特基状接触的长丝或路径 灯丝与缓冲层之间的异质结。