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公开(公告)号：US10580473B2
公开(公告)日：2020-03-03
申请号：US16283513
申请日：2019-02-22
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Ning Ge , John Paul Strachan , Jianhua Yang , Miao Hu
Abstract: A method of obtaining a dot product includes applying a programming signal to a number of capacitive memory devices coupled at a number of junctions formed between a number of row lines and a number of column lines. The programming signal defines a number of values within a matrix. The method further includes applying a vector signal. The vector signal defines a number of vector values to be applied to the capacitive memory devices.
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公开(公告)号：US20190035463A1
公开(公告)日：2019-01-31
申请号：US16148468
申请日：2018-10-01
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Miao Hu , Jianhua Yang , John Paul Strachan , Ning Ge
Abstract: A double bias dot-product engine for vector processing is described. The dot product engine includes a crossbar array having N×M memory elements to store information corresponding to values contained in an N×M matrix, each memory element being a memristive storage device. First and second vector input registers including N voltage inputs, each voltage input corresponding to a value contained in a vector having N×1 values. The vector input registers are connected to the crossbar array to supply voltage inputs to each of N row electrodes at two locations along the electrode. A vector output register is also included to receive voltage outputs from each of M column electrodes.
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公开(公告)号：US10147762B2
公开(公告)日：2018-12-04
申请号：US15316762
申请日：2014-06-26
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Minxian Max Zhang , Jianhua Yang , R. Stanley Williams
Abstract: Protective elements are provided for non-volatile memory cells in crossbar arrays in which each memristor is situated at a crosspoint of the array. Each memristor is provided with a protective element. The protective element includes a layer of a first oxide that upon heating converts to a second oxide having a higher resistivity than the first oxide.
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公开(公告)号：US09947405B2
公开(公告)日：2018-04-17
申请号：US15500075
申请日：2014-11-18
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor： John Paul Strachan , Glen E. Montgomery , Ning Ge , Miao Hu , Jianhua Yang
CPC classification number: G11C13/0069 , G01J1/00 , G06G7/16 , G11C7/062 , G11C7/067 , G11C7/1006 , G11C11/1673 , G11C13/0021 , G11C13/004 , G11C2013/0057 , G11C2013/0088 , G11C2213/77
Abstract: A method of obtaining a dot product using a memristive dot product engine with a nulling amplifier includes applying a number of programming voltages to a number of row lines within a memristive crossbar array to change the resistance values of a corresponding number of memristors located at intersections between the row lines and a number of column lines. The method also includes applying a number of reference voltages to the number of the row lines and applying a number of operating voltages to the number of the row lines. The operating voltages represent a corresponding number of vector values. The method also includes determining an array output based on a reference output and an operating output collected from the number of column lines.
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公开(公告)号：US09911788B2
公开(公告)日：2018-03-06
申请号：US15308923
申请日：2014-05-05
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Jianhua Yang , Ning Ge , Zhiyong Li
CPC classification number: H01L27/2418 , H01L27/2409 , H01L45/00 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/16
Abstract: A selector with an oxide-based layer includes an oxide-based layer that has a first region and a second region. The first region contains a metal oxide in a first oxidation state, and the second region contains the metal oxide in a second oxidation state. The first region also forms a part of each of two opposite faces of the oxide-based layer.
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Patent Agency Ranking
公开(公告)号：US09847378B2
公开(公告)日：2017-12-19
申请号：US15306125
申请日：2014-04-30
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Xia Sheng , Yoocharn Jeon , Jianhua Yang , Hans S. Cho , Richard H. Henze
CPC classification number: H01L27/2463 , G11C13/0002 , G11C13/003 , G11C2213/52 , G11C2213/71 , G11C2213/73 , H01L27/2481 , H01L27/249 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/1273 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1616 , H01L45/1675 , H01L45/1683
Abstract: A resistive memory device includes a conductor and a resistive memory stack in contact with the conductor. The resistive memory stack includes a multi-component electrode and a switching region. The multi-component electrode includes a base electrode having a surface, and an inert material electrode on the base electrode surface in a form of i) a thin layer, or ii) discontinuous nano-islands. A switching region is in contact with the conductor and with the inert material electrode when the inert material electrode is in the form of the thin layer; or the switching region is in contact with the conductor, with the inert material electrode, and with an oxidized portion of the base electrode when the inert material electrode is in the form of the discontinuous nano-islands.
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公开(公告)号：US20170271409A1
公开(公告)日：2017-09-21
申请号：US15329913
申请日：2015-01-29
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Jianhua Yang , Ning Ge , Katy Samuels , Minxian Max Zhang
CPC classification number: H01L27/2418 , G11C11/1659 , G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2213/32 , G11C2213/34 , G11C2213/76 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1625
Abstract: A resistive memory device includes a first electrode, a memristor coupled in electrical series with the first electrode, a second electrode coupled in electrical series with the memristor, a selector coupled in electrical series with the second electrode, and a third electrode coupled in electrical series with the selector. The memristor includes oxygen or nitrogen elements. The selector includes a composite dielectric material of a first dielectric material, a second dielectric material that is different from the first dielectric material, and a dopant material including a cation having a migration rate faster than the oxygen or the nitrogen elements of the memristor. The first dielectric material and the second dielectric material are present in a ratio ranging from 1:9 to 9:1, and a concentration of the dopant material in the composite dielectric material ranges from about 1% up to 50%.
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公开(公告)号：US20170200494A1
公开(公告)日：2017-07-13
申请号：US15314687
申请日：2014-05-30
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Ning Ge , Jianhua Yang , Frederick Perner , Janice H. Nickel
IPC: G11C13/00
CPC classification number: G11C13/004 , G11C13/0007 , G11C13/0023 , G11C2013/0045 , G11C2213/77
Abstract: A memory controller includes a voltage control module that operates to isolate a target memristor of a memory crossbar array. The voltage control module applies a column voltage to a column line coupled to the target memristor, applies a first row voltage to all row lines not coupled to the target memristor and a second row voltage to a row line coupled to the target memristor, and senses a current through the target memristor to determine a state of the target memristor. The memory crossbar array includes a plurality of column lines, a plurality of row lines, a plurality of memristors, and a plurality of shorting switches. Each memristor is coupled between a unique combination of one column line and one row line. Each shorting switch has a high impedance resistor and a low impedance transistor, and each shorting switch is coupled to an end of a unique row line.
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公开(公告)号：US20170110515A1
公开(公告)日：2017-04-20
申请号：US15128244
申请日：2014-04-10
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Jianhua Yang , Gary Gibson , Zhiyong Li
CPC classification number: H01L27/2481 , G11C13/004 , G11C13/0069 , H01L27/2409 , H01L27/2418 , H01L27/2463 , H01L45/04 , H01L45/08 , H01L45/1226 , H01L45/1233 , H01L45/145 , H01L45/146
Abstract: A 1-Selector n-Resistor memristive device includes a first electrode, a selector, a plurality of memristors, and a plurality of second electrodes. The selector is coupled to the first electrode via a first interface of the selector. Each memristor is coupled to a second interface of the selector via a first interface of each memristor. Each second electrode is coupled to one of the memristors via a second interface of each memristor.
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公开(公告)号：US20170062048A1
公开(公告)日：2017-03-02
申请号：US15307486
申请日：2014-04-30
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor： Ning Ge , Jianhua Yang , Adam L. Ghozeil , Brent Buchanan
IPC: G11C13/00
CPC classification number: G11C13/0038 , G11C13/0002 , G11C13/0007 , G11C13/004 , G11C13/0064 , G11C13/0069 , G11C27/024 , G11C2013/0054 , G11C2013/0066 , G11C2013/0076 , G11C2013/0092
Abstract: A device for regulating memristor switching pulses is described. The device includes a voltage source to supply a voltage to a memristor. The device also includes a voltage detector to detect a memristor voltage. The memristor voltage is based on an initial resistance state of the memristor and the voltage supplied by the voltage source. The device also includes a comparator to compare the memristor voltage with a target voltage value for the memristor. The device also includes a feedback loop to indicate to a control switch when the memristor voltage is at least equal to the target voltage value. The device also includes a control switch to cut off the memristor from the voltage source when the memristor voltage is at least equal to the target voltage value.
Abstract translation: 描述了用于调节忆阻器切换脉冲的装置。 该装置包括用于向忆阻器提供电压的电压源。 该装置还包括检测忆阻器电压的电压检测器。 忆阻器电压基于忆阻器的初始电阻状态和由电压源提供的电压。 该器件还包括比较器，用于将忆阻器电压与忆阻器的目标电压值进行比较。 当存储器电压至少等于目标电压值时，该装置还包括反馈回路以向控制开关指示。 该装置还包括控制开关，当忆阻器电压至少等于目标电压值时，该开关用于从忆阻器与电压源切断。
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