公开(公告)号：US20180068835A1

公开(公告)日：2018-03-08

申请号：US15437040

申请日：2017-02-20

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Makoto SATAKE ,  Kenetsu YOKOGAWA ,  Tadayoshi KAWAGUCHI ,  Takamasa ICHINO

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/509

CPC classification number: H01J37/32651 ,  C23C16/509 ,  C23C16/52 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/67069

Abstract: The features of the present invention are that a plasma processing apparatus includes: a process chamber in which a sample is plasma-processed; a dielectric window which airtightly seals an upper part of the process chamber; an inductive antenna which is disposed at an upper part of the dielectric window and forms an induction magnetic field; a radio frequency power source which supplies radio frequency power to the inductive antenna; and a Faraday shield to which radio frequency power is supplied from the radio frequency power source and which is disposed between the dielectric window and the inductive antenna, and the plasma processing apparatus further includes a monitoring unit which monitors a current flowing in the Faraday shield and a control unit which controls the monitored current.

公开(公告)号：US20130299091A1

公开(公告)日：2013-11-14

申请号：US13743748

申请日：2013-01-17

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yusaku SAKKA ,  Ryoji NISHIO ,  Tadayoshi KAWAGUCHI ,  Tsutomu TETSUKA

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/321

Abstract: A plasma processing apparatus includes a processing chamber, a flat-plate-like dielectric window, an induction coil, a flat electrode, a RF power source, a gas supply unit, and a sample stage on which a sample is mounted. A process gas supply plate is provided opposite the dielectric window on an inner side of the processing chamber, and a recess portion is formed in the flat electrode on a side opposite the induction coil corresponding to a gas supply position of the process gas supply plate.

Abstract translation: 等离子体处理装置包括处理室，平板状电介质窗，感应线圈，扁平电极，RF电源，气体供给单元和安装有样品的样品台。 处理气体供给板设置在处理室的内侧的电介质窗口的对面，并且在对应于处理气体供给板的气体供给位置的感应线圈的相反侧的平面电极中形成凹部。