公开(公告)号：US10121640B2

公开(公告)日：2018-11-06

申请号：US14603187

申请日：2015-01-22

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Satoru Muto ,  Tetsuo Ono ,  Yasuo Ohgoshi ,  Hirofumi Eitoku

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/311 ,  H01L21/3213 ,  H01L29/66

Abstract: The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, wherein the plasma processing method includes the steps of modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses.

公开(公告)号：US08969211B2

公开(公告)日：2015-03-03

申请号：US13960831

申请日：2013-08-07

Applicant: Hitachi High-Technologies Corporation

Inventor： Satoru Muto ,  Tetsuo Ono ,  Yasuo Ohgoshi ,  Hirofumi Eitoku

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/3065

CPC classification number: H01J37/32137 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32532 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137 ,  H01L21/67069 ,  H01L29/66795

Abstract: The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, wherein the plasma processing method includes the steps of modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses.

Abstract translation: 本发明提供一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括等离子体处理室，其中等离子体处理样品，提供用于产生等离子体的第一射频电力的第一射频电源和第二无线电 其中所述等离子体处理方法包括以下步骤：通过第一脉冲对所述第一射频功率进行调制;其中，所述等离子体处理方法包括以下步骤： 并且通过逐渐控制作为等离子体处理时间的第一脉冲的占空比来控制血浆解离状态以产生期望的解离状态。