公开(公告)号：US3635767A

公开(公告)日：1972-01-18

申请号：US3635767D

申请日：1969-09-24

Applicant: HITACHI LTD

Inventor： TSUCHIMOTO TAKASHI

IPC: H01L21/306 ,  H01L21/00 ,  H01L21/033 ,  H01L21/265 ,  H01L21/31 ,  H01L21/331 ,  H01L29/73 ,  H01L7/54

CPC classification number: H01L21/26513 ,  H01L21/00 ,  H01L21/033 ,  Y10S148/106

Abstract: Disclosed is a method of implanting impurity ions wherein such ions are implanted into the surface of a semiconductor partially exposed by a hole in two layers, one being made of silicon oxide and the other being made of a metal such as aluminum.

Abstract translation: 公开了一种注入杂质离子的方法，其中将这种离子注入到由两层中的孔部分暴露的半导体的表面中，一个由氧化硅制成，另一个由诸如铝的金属制成。

公开(公告)号：US3660171A

公开(公告)日：1972-05-02

申请号：US3660171D

申请日：1969-12-24

Applicant: HITACHI LTD

Inventor： TSUCHIMOTO TAKASHI ,  TOKUYAMA TAKASHI ,  KOMATSUBARA KIICHI

IPC: H01L21/00 ,  H01L21/265 ,  H01L29/00 ,  H01L7/54

CPC classification number: H01L21/265 ,  H01L21/00 ,  H01L29/00

Abstract: A method for producing a transistor structure utilizing ion implantation, comprising the steps of implanting ions of baseforming impurity into a predetermined portion of a surface of a semiconductor body serving as a collector and heated to a temperature above 600* C. but below the melting point of the semiconductor to form a base region, and thereafter implanting ions of emitter-forming impurity into a predetermined portion of the surface of said base region heated to a temperature in the range of 400* to 600* C. to form an emitter region.

Abstract translation: 一种利用离子注入制造晶体管结构的方法，包括以下步骤：将基底形成杂质的离子注入用作集电体的半导体本体的表面的预定部分中，并加热至高于600℃但低于 熔点以形成基区，然后将发射极形成杂质的离子注入加热到400℃至600℃范围内的温度范围内的所述基区的表面的预定部分中，以形成发射极 地区。

公开(公告)号：US3916034A

公开(公告)日：1975-10-28

申请号：US25490272

申请日：1972-05-19

Applicant: HITACHI LTD

Inventor： TSUCHIMOTO TAKASHI

IPC: C23C14/04 ,  C23C14/32 ,  C30B23/08 ,  H01J37/32 ,  C23C11/08 ,  B05D1/34 ,  B05D1/38 ,  B05D5/12

CPC classification number: H01J37/32623 ,  C23C14/048 ,  C23C14/32 ,  C30B23/08 ,  H01J37/32357 ,  H01J37/3266 ,  Y10S148/006 ,  Y10S148/169 ,  Y10S438/935

Abstract: A method of transporting substances in plasma streams to and depositing them on a target in which the vapors of two or more selected materials are turned into separate ionized plasmas in separate plasma generating chambers, the plasmas are effused from their respective chambers due to the difference in plasma density between the inside and outside of the chamber to form separate plasma streams and the plasma streams are joined to form a single stream which is conducted to the surface of a substrate by means of axial magnetic fields which also serve to converge the plasma streams. In another embodiment, a single stream is branched by a magnetic field to form plural streams which are conducted to different substrates or different points on the same substrate.

Abstract translation: 在等离子体物流中输送物质并将其沉积在靶上的方法，其中两个或更多个选定材料的蒸气在单独的等离子体发生室中变成分离的离子化等离子体，由于这些等离子体的差异 等离子体密度在室的内部和外部之间以形成分离的等离子体流，并且等离子体流被连接以形成单个流，其通过也用于会聚等离子体流的轴向磁场被传导到衬底的表面。 在另一个实施例中，单个流由磁场分支，以形成多个流，这些流被传导到同一衬底上的不同衬底或不同点。

公开(公告)号：US3891468A

公开(公告)日：1975-06-24

申请号：US39911573

申请日：1973-09-20

Applicant: HITACHI LTD

Inventor： ITO KATSUHIKO ,  TSUCHIMOTO TAKASHI

IPC: H01L29/73 ,  H01L21/00 ,  H01L21/331 ,  H01L29/00 ,  H01L29/78 ,  H01L7/54

CPC classification number: H01L21/00 ,  H01L29/00 ,  Y10S148/053 ,  Y10S148/157

Abstract: A method of forming a shallow P-N junction under precise control of its position. An impurity doped layer of the first conductivity type is formed, so that the impurity concentration may become a maximum at substantially the surface of a semiconductor substrate or at an inner part of the semiconductor substrate. Ions of impurities of a second conductivity type, opposite to the first conductivity type, are implanted, so that the impurity concentration may become a maximum greatest at the maximum depletion layer thickness in the semiconductor substrate. The P-N junction finally formed is located within the maximum depletion layer thickness.

Abstract translation: 在其位置的精确控制下形成浅P-N结的方法。 形成第一导电类型的杂质掺杂层，使得杂质浓度在半导体衬底的基本表面或半导体衬底的内部可能变为最大值。 注入与第一导电类型相反的第二导电类型的杂质的离子，使得杂质浓度可以在半导体衬底中的最大耗尽层厚度处变为最大值。 最终形成的P-N结位于最大耗尽层厚度内。

公开(公告)号：US3615875A

公开(公告)日：1971-10-26

申请号：US3615875D

申请日：1969-09-29

Applicant: HITACHI LTD

Inventor： MORITA TODAHISA ,  TOKUYAMA TAKASHI ,  TSUCHIMOTO TAKASHI ,  MIYAZAKI TAKAO ,  NISHIMATSU SHIGERU ,  IKEDA TAKAHIDE ,  SANO HISUMI ,  HORIUCHI MASATADA

IPC: H01L21/00 ,  H01L21/265 ,  H01L29/00 ,  H01L29/73 ,  H01L7/54

CPC classification number: H01L29/00 ,  H01L21/00 ,  H01L21/265 ,  H01L29/73 ,  Y10S438/965

Abstract: A semiconductor body acting as a collector is directed at a predetermined surface area by an inert ion beam from such a direction as not to produce a channeling effect in the body, whereby obtaining an amorphous surface region thereat, then directed at a larger surface area including said predetermined surface area by an active impurity ion beam of the conductivity type opposite to said body from a direction producing the channeling effect in the body, thereby obtaining a base region in the semiconductor body with a PN junction therebetween which has a partial projection in its bottom part, and further directed at said predetermined surface area by an active impurity ion beam of the same conductivity type as that of the body from the channeling-effect-providing direction, thereby obtaining an emitter region, and finally heat-treating, so that a transistor without defects due to the emitter dip effect is obtained.

公开(公告)号：US3607449A

公开(公告)日：1971-09-21

申请号：US3607449D

申请日：1969-09-23

Applicant: HITACHI LTD

Inventor： TOKUYAMA TAKASHI ,  MIYAZAKI TAKAO ,  TSUCHIMOTO TAKASHI ,  MORITA TADAHISA ,  IKEDA TAKAHIDE ,  NISHIMATSU SHIGERU ,  SANO HISUMI ,  HORIUCHI MASATADA

IPC: H01L29/73 ,  H01L21/225 ,  H01L21/265 ,  H01L21/3115 ,  H01L21/3215 ,  H01L21/329 ,  H01L21/331 ,  H01L23/29 ,  H01L7/54

CPC classification number: H01L21/3215 ,  H01L21/2255 ,  H01L21/31155 ,  H01L23/291 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is a method of forming a PN junction comprising the steps of implanting impurity ions into an insulating layer formed on the surface of a semiconductor substrate and then diffusing the implanted impurity ions into the surface layer of the semiconductor substrate thereunder.