公开(公告)号：US20130146468A1

公开(公告)日：2013-06-13

申请号：US13314926

申请日：2011-12-08

申请人： HOON KIM ,  SANG HYEOB LEE ,  WEI TI LEE ,  SESHADRI GANGULI ,  HYOUNG-CHAN HA ,  SANG HO YU

发明人： HOON KIM ,  SANG HYEOB LEE ,  WEI TI LEE ,  SESHADRI GANGULI ,  HYOUNG-CHAN HA ,  SANG HO YU

IPC分类号： C23C28/02 ,  C23C16/56 ,  B05D5/12 ,  C23C16/44

CPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/56 ,  C23C28/02 ,  C23C28/023

摘要： Methods for depositing ruthenium-containing films are disclosed herein. In some embodiments, a method of depositing a ruthenium-containing film on a substrate may include depositing a ruthenium-containing film on a substrate using a ruthenium-containing precursor, the deposited ruthenium-containing film having carbon incorporated therein; and exposing the deposited ruthenium-containing layer to a hydrogen-containing gas to remove at least some of the carbon from the deposited ruthenium-containing film. In some embodiments, the hydrogen-containing gas exposed ruthenium-containing film may be subsequently exposed to an oxygen-containing gas to at least one of remove at least some carbon from or add oxygen to the ruthenium-containing film. In some embodiments, the deposition and exposure to the hydrogen-containing gas and optionally, the oxygen-containing gas may be repeated to deposit the ruthenium-containing film to a desired thickness.

摘要翻译： 本文公开了沉积含钌膜的方法。 在一些实施方案中，在基材上沉积含钌膜的方法可以包括使用含钌前驱体将沉积的含钌膜沉积在基板上， 并将沉积的含钌层暴露于含氢气体中以从沉积的含钌膜中除去至少一些碳。 在一些实施方案中，暴露含钌的含氟膜的膜随后可以暴露于含氧气体中至少一种，以将至少一些碳从氧钌中除去或添加至含钌膜。 在一些实施方案中，可以重复沉积和暴露于含氢气体和任选地含氧气体，以将含钌膜沉积到所需厚度。

公开(公告)号：US20120012465A1

公开(公告)日：2012-01-19

申请号：US13167001

申请日：2011-06-23

申请人： HOON KIM ,  WEI TI LEE ,  SANG HO YU ,  SESHADRI GANGULI ,  HYOUNG-CHAN HA ,  SANG HYEOB LEE

发明人： HOON KIM ,  WEI TI LEE ,  SANG HO YU ,  SESHADRI GANGULI ,  HYOUNG-CHAN HA ,  SANG HYEOB LEE

IPC分类号： C25D5/02

CPC分类号： C25D5/02 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76898

摘要： Methods for forming barrier/seed layers for interconnect structures are provided herein. In some embodiments, a method of processing a substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method may include forming a layer comprising manganese (Mn) and at least one of ruthenium (Ru) or cobalt (Co) on the sidewall and bottom surface of the opening; and depositing a conductive material on the layer to fill the opening. In some embodiments, one of ruthenium (Ru) or cobalt (Co) is deposited on the sidewall and bottom surface of the opening. The materials may be deposited by chemical vapor deposition (CVD) or by physical vapor deposition (PVD).

摘要翻译： 本文提供了用于形成用于互连结构的势垒/种子层的方法。 在一些实施方案中，一种处理基材的方法，所述基材具有形成在基材的第一表面中的开口，所述开口具有侧壁和底部表面，所述方法可以包括形成包含锰（Mn）和至少一种钌的层 （Ru）或钴（Co）在开口的侧壁和底表面上; 以及在所述层上沉积导电材料以填充所述开口。 在一些实施例中，钌（Ru）或钴（Co）之一沉积在开口的侧壁和底表面上。 材料可以通过化学气相沉积（CVD）或物理气相沉积（PVD）沉积。

公开(公告)号：US20110312148A1

公开(公告)日：2011-12-22

申请号：US13155520

申请日：2011-06-08

申请人： HOON KIM ,  SANG-HYEOB LEE ,  SANG HO YU ,  WEI TI LEE ,  SESHADRI GANGULI ,  HYOUNG-CHAN HA

发明人： HOON KIM ,  SANG-HYEOB LEE ,  SANG HO YU ,  WEI TI LEE ,  SESHADRI GANGULI ,  HYOUNG-CHAN HA

IPC分类号： H01L21/02 ,  B82Y40/00

CPC分类号： H01L28/65 ,  B82Y40/00 ,  C23C16/18 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76864 ,  H01L28/91

摘要： Methods for depositing ruthenium-containing films are provided herein. In some embodiments, a method of depositing a ruthenium-containing film on a substrate may include depositing a ruthenium-containing film on a substrate using a ruthenium-containing precursor, the deposited ruthenium-containing film having carbon incorporated therein; and exposing the deposited ruthenium-containing film to an oxygen-containing gas to remove at least some of the carbon from the deposited ruthenium-containing film. In some embodiments, the oxygen-containing gas exposed ruthenium-containing film may be annealed in a hydrogen-containing gas to remove at least some oxygen from the ruthenium-containing film. In some embodiments, the deposition, exposure, and annealing may be repeated to deposit the ruthenium-containing film to a desired thickness.

摘要翻译： 本文提供了沉积含钌膜的方法。 在一些实施方案中，在基材上沉积含钌膜的方法可以包括使用含钌前驱体将沉积的含钌膜沉积在基板上， 并将沉积的含钌膜暴露于含氧气体中以从沉积的含钌膜中除去至少一些碳。 在一些实施方案中，含氧气体暴露的含钌膜可以在含氢气体中退火以从含钌膜中除去至少一些氧。 在一些实施例中，可以重复沉积，曝光和退火，以将含钌膜沉积到期望的厚度。

公开(公告)号：US20110298062A1

公开(公告)日：2011-12-08

申请号：US13116794

申请日：2011-05-26

申请人： SESHADRI GANGULI ,  SANG Ho YU ,  SANG-HYEOB LEE ,  HYOUNG-CHAN HA ,  WEI TI LEE ,  HOON KIM ,  SRINIVAS GANDIKOTA ,  YU LEI ,  KEVIN MORAES ,  XIANMIN TANG

发明人： SESHADRI GANGULI ,  SANG Ho YU ,  SANG-HYEOB LEE ,  HYOUNG-CHAN HA ,  WEI TI LEE ,  HOON KIM ,  SRINIVAS GANDIKOTA ,  YU LEI ,  KEVIN MORAES ,  XIANMIN TANG

IPC分类号： H01L21/28 ,  H01L29/78 ,  B82Y40/00 ,  B82Y99/00

CPC分类号： H01L21/28079 ,  H01L21/28088 ,  H01L21/32051 ,  H01L29/49

摘要： Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop the dielectric layer; depositing a second layer comprising cobalt or nickel within the feature atop the first layer; and depositing a third layer comprising a metal within the feature atop the second layer to fill the feature, wherein at least one of the first or second layers forms a wetting layer to form a nucleation layer for a subsequently deposited layer, wherein one of the first, second, or third layers forms a work function layer, and wherein the third layer forms a gate electrode.

摘要翻译： 本文提供了金属门结构及其形成方法。 在一些实施例中，在具有形成在高k电介质层中的特征的衬底上形成金属栅极结构的方法可以包括在电介质层顶部的特征内沉积第一层; 在所述特征内在所述第一层顶部沉积包含钴或镍的第二层; 以及在第二层顶部沉积包括特征内的金属的第三层以填充该特征，其中第一层或第二层中的至少一层形成润湿层以形成后续沉积层的成核层，其中第一层 第二层或第三层形成功函数层，并且其中第三层形成栅电极。