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    MULTI-ZONED PLASMA PROCESSING ELECTROSTATIC CHUCK WITH IMPROVED TEMPERATURE UNIFORMITY
    1.
    发明申请
    MULTI-ZONED PLASMA PROCESSING ELECTROSTATIC CHUCK WITH IMPROVED TEMPERATURE UNIFORMITY 审中-公开
    具有改进温度均匀性的多区等离子体处理静电卡

    公开(公告)号：US20140346743A1

    公开(公告)日：2014-11-27

    申请号：US14447557

    申请日：2014-07-30

    申请人： Hamid Tavassoli ,  Surajit Kumar ,  Kallol Bera ,  Xiaoping Zhou ,  Shane C. Nevil ,  Douglas A. Buchberger, JR.

    发明人： Hamid Tavassoli ,  Surajit Kumar ,  Kallol Bera ,  Xiaoping Zhou ,  Shane C. Nevil ,  Douglas A. Buchberger, JR.

    IPC分类号： B23B31/28 ,  B23Q3/15

    CPC分类号： B23B31/28 ,  B23B2231/24 ,  B23Q3/15 ,  H01L21/67069 ,  H01L21/6833 ,  H05H1/46 ,  Y10T279/23

    摘要： An electrostatic chuck assembly including a dielectric layer with a top surface to support a workpiece. A cooling channel base disposed below the dielectric layer includes a plurality of inner fluid conduits disposed beneath an inner portion of the top surface, and a plurality of outer fluid conduits disposed beneath an outer portion of the top surface. A chuck assembly includes a thermal break disposed within the cooling channel base between the inner and outer fluid conduits. A chuck assembly includes a fluid distribution plate disposed below the cooling channel base and the base plate to distribute a heat transfer fluid delivered from a common input to each inner or outer fluid conduit. The branches of the inner input manifold may have substantially equal fluid conductance.

    摘要翻译： 一种静电卡盘组件，包括具有顶表面以支撑工件的电介质层。 布置在电介质层下方的冷却通道底座包括设置在顶表面的内部下方的多个内部流体导管，以及设置在顶部表面的外部部分下方的多个外部流体导管。 卡盘组件包括设置在内部和外部流体管道之间的冷却通道底部内的热断裂。 卡盘组件包括布置在冷却通道底部和底板下方的流体分配板，用于将从公共输入端输送的传热流体分配到每个内部或外部流体导管。 内部输入歧管的分支可以具有基本相等的流体电导。

    MULTI-ZONED PLASMA PROCESSING ELECTROSTATIC CHUCK WITH IMPROVED TEMPERATURE UNIFORMITY
    2.
    发明申请
    MULTI-ZONED PLASMA PROCESSING ELECTROSTATIC CHUCK WITH IMPROVED TEMPERATURE UNIFORMITY 有权
    具有改进温度均匀性的多区等离子体处理静电卡

    公开(公告)号：US20120091104A1

    公开(公告)日：2012-04-19

    申请号：US13081412

    申请日：2011-04-06

    申请人： Hamid Tavassoli ,  Surajit KUMAR ,  Kallol Bera ,  Xiaoping Zhou ,  Shane C. Nevil ,  Douglas A. Buchberger, JR.

    发明人： Hamid Tavassoli ,  Surajit KUMAR ,  Kallol Bera ,  Xiaoping Zhou ,  Shane C. Nevil ,  Douglas A. Buchberger, JR.

    IPC分类号： B23K10/00 ,  B23B31/28

    CPC分类号： B23B31/28 ,  B23B2231/24 ,  B23Q3/15 ,  H01L21/67069 ,  H01L21/6833 ,  H05H1/46 ,  Y10T279/23

    摘要： An electrostatic chuck assembly including a dielectric layer with a top surface to support a workpiece. A cooling channel base disposed below the dielectric layer includes a plurality of inner fluid conduits disposed beneath an inner portion of the top surface, and a plurality of outer fluid conduits disposed beneath an outer portion of the top surface. A chuck assembly includes a thermal break disposed within the cooling channel base between the inner and outer fluid conduits. A chuck assembly includes a fluid distribution plate disposed below the cooling channel base and the base plate to distribute a heat transfer fluid delivered from a common input to each inner or outer fluid conduit. The branches of the inner input manifold may have substantially equal fluid conductance.

    摘要翻译： 一种静电卡盘组件，包括具有顶表面以支撑工件的电介质层。 布置在电介质层下方的冷却通道底座包括设置在顶表面的内部下方的多个内部流体导管，以及设置在顶部表面的外部部分下方的多个外部流体导管。 卡盘组件包括设置在内部和外部流体管道之间的冷却通道底部内的热断裂。 卡盘组件包括布置在冷却通道底部和底板下方的流体分配板，用于将从公共输入端输送的传热流体分配到每个内部或外部流体导管。 内部输入歧管的分支可以具有基本相等的流体电导。

    ASSEMBLY FOR DELIVERING RF POWER AND DC VOLTAGE TO A PLASMA PROCESSING CHAMBER
    3.
    发明申请
    ASSEMBLY FOR DELIVERING RF POWER AND DC VOLTAGE TO A PLASMA PROCESSING CHAMBER 有权
    用于将RF功率和直流电压传送到等离子体处理室的组件

    公开(公告)号：US20110297650A1

    公开(公告)日：2011-12-08

    申请号：US13085070

    申请日：2011-04-12

    申请人： Hamid Tavassoli ,  Surajit Kumar ,  Shane C. Nevil ,  Douglas A. Buchberger, JR.

    发明人： Hamid Tavassoli ,  Surajit Kumar ,  Shane C. Nevil ,  Douglas A. Buchberger, JR.

    IPC分类号： B23K10/00 ,  B23B31/28

    CPC分类号： H01L21/67109 ,  H01L21/6831 ,  H01L21/68792

    摘要： A triaxial rod assembly for providing both RF power and DC voltage to a chuck assembly that supports a workpiece in a processing chamber during a manufacturing operation. In embodiments, a rod assembly includes a center conductor to be coupled to a chuck electrode for providing DC voltage to clamp a workpiece. Concentrically surrounding the center conductor is an annular RF transmission line to be coupled to an RF powered base to provide RF power to the chuck assembly. An insulator is disposed between the center conductor and RF transmission line. Concentrically surrounding the RF transmission line is a ground plane conductor coupled to a grounded base of the chuck to provide a reference voltage relative to the DC voltage. An insulator is disposed between the RF transmission line and the ground plane conductor.

    摘要翻译： 一种三轴杆组件，用于在制造操作期间向卡盘组件提供RF功率和DC电压，该卡盘组件在处理室中支撑工件。 在实施例中，杆组件包括要耦合到卡盘电极的中心导体，用于提供直流电压以夹紧工件。 集中地围绕中心导体是环形RF传输线，其被耦合到RF供电底座以向卡盘组件提供RF功率。 绝缘体设置在中心导体和RF传输线之间。 围绕RF传输线的是一个接地平面导体，其耦合到卡盘的接地基座，以提供相对于直流电压的参考电压。 绝缘体设置在RF传输线和接地平面导体之间。

    METHOD AND APPARATUS FOR CONTROLLING TEMPERATURE OF A SUBSTRATE
    4.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING TEMPERATURE OF A SUBSTRATE 审中-公开
    控制基板温度的方法和装置

    公开(公告)号：US20090159566A1

    公开(公告)日：2009-06-25

    申请号：US12340156

    申请日：2008-12-19

    申请人： Paul L. Brillhart ,  Richard Charles Fovell ,  Hamid Tavassoli ,  Xiaoping Zhou ,  Douglas A. Buchberger, JR. ,  Kallol Bera

    发明人： Paul L. Brillhart ,  Richard Charles Fovell ,  Hamid Tavassoli ,  Xiaoping Zhou ,  Douglas A. Buchberger, JR. ,  Kallol Bera

    IPC分类号： H01L21/306 ,  C23C16/513 ,  C23C14/22 ,  C23C14/34

    CPC分类号： C23C16/4586 ,  C23C14/505

    摘要： A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, method for controlling a substrate temperature during processing includes placing a substrate on a substrate pedestal assembly in a vacuum processing chamber, controlling a temperature of the substrate pedestal assembly by flowing a heat transfer fluid through a radial flowpath within the substrate pedestal assembly, the radial flowpath including both radially inward and radially outward portions, and plasma processing the substrate on the temperature controlled substrate pedestal assembly. In another embodiment, plasma processing may be at least one of a plasma treatment, a chemical vapor deposition process, a physical vapor deposition process, an ion implantation process or an etch process, among others.

    摘要翻译： 提供了一种用于在处理期间控制基板的温度的基座组件和方法。 在一个实施例中，用于在处理期间控制衬底温度的方法包括将衬底放置在真空处理室中的衬底基座组件上，通过使传热流体流过衬底基座组件内的径向流动路径来控制衬底基座组件的温度 径向流径包括径向向内和径向向外的部分，以及等离子体处理温度受控的衬底基座组件上的衬底。 在另一个实施例中，等离子体处理可以是等离子体处理，化学气相沉积工艺，物理气相沉积工艺，离子注入工艺或蚀刻工艺等中的至少一个。

    PLASMA REACTOR WITH A MULTIPLE ZONE THERMAL CONTROL FEED FORWARD CONTROL APPARATUS
    6.
    发明申请
    PLASMA REACTOR WITH A MULTIPLE ZONE THERMAL CONTROL FEED FORWARD CONTROL APPARATUS 有权
    具有多区域热控制进料控制装置的等离子体反应器

    公开(公告)号：US20100314046A1

    公开(公告)日：2010-12-16

    申请号：US12855670

    申请日：2010-08-12

    申请人： Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas A. Buchberger, JR. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

    发明人： Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas A. Buchberger, JR. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

    摘要： A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer evaporators inside respective inner and outer zones of the electrostatic chuck and a refrigeration loop having respective inner and cuter expansion valves for controlling flow of coolant through the inner and outer evaporators respectively. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively. Inner and outer zone agile control processors coupled to the thermal model govern the inner and outer zone backside gas pressure sources, respectively, in response to predictions from the model of changes in the respective pressures that would bring the temperatures measured by the inner and outer zone sensors, respectively, closer to a desired temperature.

    摘要翻译： 具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的内部和外部区域背侧气体压力源，用于将相应压力下的导热气体施加到相应的内部和外部区域 每当工件保持在表面上时形成的工件表面界面，以及静电卡盘的内部和外部区域内的内部和外部蒸发器，以及具有各自的内部和切割器膨胀阀的制冷回路，用于控制冷却剂通过内部 和外部蒸发器。 反应器还包括静电卡盘的内部和外部区域中的内部和外部区域温度传感器以及能够模拟通过蒸发器和表面之间的内部和外部区域的热传递的热模型，其基于来自内部和 外部温度传感器。 耦合到热模型的内部和外部区域敏捷控制处理器分别响应于来自模型的各个压力的变化的预测来控制内部和外部区域背侧气体压力源，该模型将使由内部和外部区域测量的温度 传感器分别更接近所需的温度。

    CAPACITIVELY COUPLED PLASMA REACTOR HAVING VERY AGILE WAFER TEMPERATURE CONTROL
    8.
    发明申请
    CAPACITIVELY COUPLED PLASMA REACTOR HAVING VERY AGILE WAFER TEMPERATURE CONTROL 有权
    具有非常平滑的温度控制的电容耦合等离子体反应器

    公开(公告)号：US20100303680A1

    公开(公告)日：2010-12-02

    申请号：US12855678

    申请日：2010-08-12

    申请人： Douglas A. Buchberger, JR. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

    发明人： Douglas A. Buchberger, JR. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

    IPC分类号： B01J19/08

    CPC分类号： H01L21/67248 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

    摘要： A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas. The reactor further includes an agile workpiece temperature control loop including (a) a temperature probe in the electrostatic chuck, and (b) a backside gas pressure controller coupled to an output of the temperature probe and responsive to a specified desired temperature, the controller governing the gas valve in response to a difference between the output of the temperature probe and the desired temperature.

    摘要翻译： 用于加工工件的等离子体反应器包括反应室，腔室内的静电吸盘具有用于支撑工件的顶表面，并且在顶表面上具有凹陷，每当由搁置在顶表面上的工件覆盖时形成封闭的气体流动通道。 反应器还包括热耦合到静电卡盘的热控制装置，RF等离子体偏置功率发生器，其被耦合以向静电卡盘施加RF功率，导热气体的加压气体供应，将加压气体供应连接到 所述凹槽有助于用导热气体填充通道，用于在工件的背面与静电卡盘之间传热，其传热速率是导热气体工件背面压力的函数。 反应器还包括敏捷工件温度控制回路，其包括（a）静电卡盘中的温度探针，和（b）耦合到温度探头的输出并响应于指定的期望温度的背侧气体压力控制器，控制器控制 气体阀响应于温度探头的输出与所需温度之间的差异。

    METHOD OF COOLING A WAFER SUPPORT AT A UNIFORM TEMPERATURE IN A CAPACITIVELY COUPLED PLASMA REACTOR
    10.
    发明申请
    METHOD OF COOLING A WAFER SUPPORT AT A UNIFORM TEMPERATURE IN A CAPACITIVELY COUPLED PLASMA REACTOR 有权
    在一个电容耦合等离子体反应器中均匀温度下冷却支架的方法

    公开(公告)号：US20100300621A1

    公开(公告)日：2010-12-02

    申请号：US12855680

    申请日：2010-08-12

    申请人： Paul Lukas Brillhart ,  Richard Fovell ,  Douglas A. Buchberger, JR. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

    发明人： Paul Lukas Brillhart ,  Richard Fovell ,  Douglas A. Buchberger, JR. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

    IPC分类号： C23F1/08 ,  F25D15/00

    CPC分类号： H01L21/67109

    摘要： A method of transferring heat from or to a workpiece support in an RF coupled plasma reactor includes placing coolant in an internal flow channel that is located inside the workpiece support and transferring heat from or to the coolant by circulating the coolant through a refrigeration loop in which the internal flow channel of the workpiece support constitutes an evaporator of the refrigeration loop. The method further includes maintaining thermal conditions of the coolant inside the evaporator within a range in which heat exchange between the workpiece support and the coolant is primarily or exclusively through the latent heat of vaporization of the coolant.

    摘要翻译： 在RF耦合的等离子体反应器中将热量传递到工件支架的方法包括：将冷却剂放置在位于工件支架内部的内部流动通道中，并通过使冷却剂循环通过制冷循环来将热量传递或传递给冷却剂， 工件支撑件的内部流动通道构成制冷回路的蒸发器。 该方法还包括将蒸发器内部的冷却剂的热条件保持在工件支承件和冷却剂之间的热交换主要或仅通过冷却剂的潜热潜热的范围内。