摘要:
Disclosed is a method for producing a cerium dioxide nanopowder by flame spray pyrolysis. The method comprises dissolving a cerium compound in an organic solvent to prepare a precursor solution, atomizing the precursor solution into microdroplets using an ultrasonic atomizer, transferring the microdroplets together with an argon gas as a carrier gas to a central portion of a high-temperature diffusion flame burner, subjecting the microdroplets to pyrolysis and oxidation in the central portion of the diffusion flame burner to produce a cerium dioxide nanopowder, and collecting the cerium dioxide nanopowder using a collector. According to the method, a cerium dioxide nanopowder can be continuously produced on a large scale by flame spray pyrolysis. In addition, the particle size and uniformity of the cerium dioxide nanopowder can be controlled by appropriately selecting the kind of the solvent and the concentration of the raw material. Furthermore, flame spray pyrolysis allows the cerium dioxide to have a fluorite crystal structure.
摘要:
Disclosed is a method for producing a cerium dioxide nanopowder by flame spray pyrolysis. The method comprises dissolving a cerium compound in an organic solvent to prepare a precursor solution, atomizing the precursor solution into microdroplets using an ultrasonic atomizer, transferring the microdroplets together with an argon gas as a carrier gas to a central portion of a high-temperature diffusion flame burner, subjecting the microdroplets to pyrolysis and oxidation in the central portion of the diffusion flame burner to produce a cerium dioxide nanopowder, and collecting the cerium dioxide nanopowder using a collector. According to the method, a cerium dioxide nanopowder can be continuously produced on a large scale by flame spray pyrolysis. In addition, the particle size and uniformity of the cerium dioxide nanopowder can be controlled by appropriately selecting the kind of the solvent and the concentration of the raw material. Furthermore, flame spray pyrolysis allows the cerium dioxide to have a fluorite crystal structure.
摘要:
A hard mask composition, a method of forming a pattern, and a semiconductor integrated circuit device, the hard mask composition including a solvent; and a compound, the compound including a structural unit represented by the following Chemical Formula 1:
摘要:
An aromatic ring-containing polymer for a resist underlayer, the polymer including a unit represented by the following Chemical Formula 1: wherein, R1 and R2 are independently hydrogen, a C1 to C10 alkyl group, or an aromatic group, A is a functional group derived from an aromatic compound with a heteroatom or without a heteroatom, and n is an integer of one or more.
摘要:
Disclosed is a method for preparing low-oxygen titanium powders. The method includes (a) separately placing titanium base powders and calcium in a deoxidation container, (b) deoxidizing the titanium base powders by heating an inner part of the deoxidation container at a temperature of 850° C. to 1050° C. so that the calcium is evaporated to make contact with the titanium base powders, (c) removing calcium oxide from surfaces of titanium powders, which are obtained by deoxidizing the titanium base powders in step (b), by washing the titanium powders, and (d) drying the titanium powders subject to the removing of the calcium oxide in step (c).
摘要:
The present invention relates to a process for preparing 4-chloro-3-hydroxybutanoic acid ester, an intermediate for preparing atorvastatin, in high purity and yield, by comprising the steps of 1) reacting epichlorohydrin of formula (2) with cyanide of formula (3) under the condition of pH ranging from 7 to 8, to form the 4-chloro-3-hydroxybutyronitrile of formula (4) and 2a) dissolving the 4-chloro-3-hydroxybutyronitrile of formula (4) in an alcoholic solvent and reacting it with hydrogen chloride, or 2b) reacting the 4-chloro-3-hydroxybutyronitrile of formula (4) in an alcoholic solvent saturated with hydrogen chloride, to form the 4-chloro-3-hydroxybutyronitrile acid ester of formula (I).
摘要:
An aromatic ring-containing compound for a resist underlayer and a resist underlayer composition, the aromatic ring-containing compound being represented by the following Chemical Formula 1: wherein, in Chemical Formula 1, R1 to R6 are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C5 to C20 aromatic ring group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C3 to C20 cycloalkenyl group, a substituted or unsubstituted C2 to C20 heteroaryl group, or a substituted or unsubstituted C2 to C20 heterocycloalkyl group, X1 to X6 are each independently hydrogen, a hydroxy group (—OH), a substituted or unsubstituted alkyl amine group, a substituted or unsubstituted alkoxy group, or an amino group (—NH2), n1 to n6 are each independently 0 or 1, and 1≦n1+n2+n3+n4+n5+n6≦6.
摘要:
A hard mask composition, a method of forming a pattern, and a semiconductor integrated circuit device, the hard mask composition including a solvent; and a compound, the compound including a structural unit represented by the following Chemical Formula 1:
摘要:
An aromatic ring-containing polymer for a resist underlayer, the polymer including a unit represented by the following Chemical Formula 1: wherein, R1 and R2 are independently hydrogen, a C1 to C10 alkyl group, or an aromatic group, A is a functional group derived from an aromatic compound with a heteroatom or without a heteroatom, and n is an integer of one or more.