Manufacturing method of charging capacity structure
    3.
    发明授权
    Manufacturing method of charging capacity structure 有权
    充电容量结构的制造方法

    公开(公告)号:US08673730B2

    公开(公告)日:2014-03-18

    申请号:US13301255

    申请日:2011-11-21

    IPC分类号: H01L21/20

    CPC分类号: H01L28/92 H01L27/1085

    摘要: A method of manufacturing a charging capacity structure includes steps of: forming a first oxide layer, a support layer and a second oxide layer on a substrate in sequence; forming a plurality of etching holes on the surface of the second oxide layer in a matrix to run through the substrate that are spaced from each other at a selected distance; forming a plurality of pillar layers in the etching holes; removing the second oxide layer by etching; forming an etching protection layer on the surfaces of the support layer and pillar tubes that is formed at a thickness one half of the spaced distance between the etching holes such that the pillar tubes at diagonal locations form a self-calibration hole; and finally removing the first oxide layer from the self-calibration hole by etching. Through the self-calibration hole, the invention needn't to provide extra photoresists to form holes.

    摘要翻译: 制造充电容量结构的方法包括以下步骤:依次在基板上形成第一氧化物层,支撑层和第二氧化物层; 在所述第二氧化物层的表面上以矩阵形成多个蚀刻孔以穿过所述基板,所述蚀刻孔以选定距离彼此间隔开; 在蚀刻孔中形成多个柱层; 通过蚀刻去除第二氧化物层; 在支撑层和支柱管的表面上形成蚀刻保护层,其形成为蚀刻孔之间间隔距离的一半的厚度,使得在对角线位置处的柱管形成自校准孔; 最后通过蚀刻从自校准孔中除去第一氧化物层。 通过自校准孔,本发明不需要提供额外的光致抗蚀剂来形成孔。