Photovoltaic Cell Containing a Semiconductor Photovoltaically Active Material
    8.
    发明申请
    Photovoltaic Cell Containing a Semiconductor Photovoltaically Active Material 审中-公开
    包含半导体光伏活性材料的光伏电池

    公开(公告)号:US20080163928A1

    公开(公告)日:2008-07-10

    申请号:US11817167

    申请日:2006-03-07

    摘要: The invention relates to a photovoltaic cell and to a process for producing a photovoltaic cell comprising a photovoltaically active semiconductor material of the formula (I) or (II): ZnTe   (I) Zn1-xMnxTe   (II) where x is from 0.01 to 0.7, wherein the photovoltaically active semiconductor material comprises a metal halide comprising a metal selected from the group consisting of germanium, tin, antimony, bismuth and copper and a halogen selected from the group consisting of fluorine, chlorine, bromine and iodine

    摘要翻译: 本发明涉及一种光伏电池和一种用于生产包括式(I)或(II)的光伏活性半导体材料的光伏电池的方法:<?in-line-formula description =“In-line Formulas”end = “lead”?> ZnTe(I)<?in-line-formula description =“In-line Formulas”end =“tail”?> <?in-line-formula description =“In-line Formulas”end =“lead “?”Zn 1-x Mn x Te(II)<?in-line-formula description =“In-line Formulas”end =“tail”?>其中 x为0.01至0.7,其中所述光伏活性半导体材料包括金属卤化物,其包含选自锗,锡,锑,铋和铜的金属和选自氟,氯,溴和 碘

    Thermoelectric Material Contact
    9.
    发明申请
    Thermoelectric Material Contact 审中-公开
    热电材料接触

    公开(公告)号:US20080060693A1

    公开(公告)日:2008-03-13

    申请号:US11576103

    申请日:2005-09-24

    IPC分类号: H01L35/08 H01L21/00

    CPC分类号: H01L35/08

    摘要: The invention relates to the thermally stable contacting of semiconductive alloys for use in thermoelectric generators and Peltier arrangements by means of soldering, and to processes for producing thermoelectric modules using a barrier layer composed of borides, nitrides, carbides, phosphides and/or silicides.

    摘要翻译: 本发明涉及通过焊接用于热电发电机和珀耳帖排列的半导体合金的热稳定接触,以及使用由硼化物,氮化物,碳化物,磷化物和/或硅化物组成的阻挡层制造热电模块的方法。