Stabilized poly(alkylene terephthalate) molding materials
    4.
    发明授权
    Stabilized poly(alkylene terephthalate) molding materials 失效
    稳定的聚(对苯二甲酸亚烷基酯)成型材料

    公开(公告)号:US4229553A

    公开(公告)日:1980-10-21

    申请号:US057130

    申请日:1979-07-12

    IPC分类号: C08L67/00 C08L67/02 C08L63/00

    CPC分类号: C08L67/02

    摘要: Poly(alkylene terephthalate) molding materials which contain, as the stabilizer, a diepoxide of molecular weight from 200 to 2,000, and a catalyst which is an alkali metal salt of a chelating agent possessing one or more --N(CH.sub.2 --COO.sup.-).sub.2 groups in the molecule. Preferred catalysts are trisodium nitrilotriacetate and tetrasodium ethylenediaminetetraacetate. The molding materials may be used for the manufacture of moldings, films, monofilaments and fibers.

    摘要翻译: 含有分子量为200〜2000的二环氧化物作为稳定剂的聚(对苯二甲酸亚烷基酯)成型材料和具有一个或多个-N(CH 2 -CO 2)2的螯合剂的碱金属盐的催化剂 分子中的基团。 优选的催化剂是次氮基三乙酸三钠和乙二胺四乙酸四钠。 成型材料可用于制造模制品,薄膜,单丝和纤维。

    Photovoltaic Cell Containing a Semiconductor Photovoltaically Active Material
    10.
    发明申请
    Photovoltaic Cell Containing a Semiconductor Photovoltaically Active Material 审中-公开
    包含半导体光伏活性材料的光伏电池

    公开(公告)号:US20080163928A1

    公开(公告)日:2008-07-10

    申请号:US11817167

    申请日:2006-03-07

    摘要: The invention relates to a photovoltaic cell and to a process for producing a photovoltaic cell comprising a photovoltaically active semiconductor material of the formula (I) or (II): ZnTe   (I) Zn1-xMnxTe   (II) where x is from 0.01 to 0.7, wherein the photovoltaically active semiconductor material comprises a metal halide comprising a metal selected from the group consisting of germanium, tin, antimony, bismuth and copper and a halogen selected from the group consisting of fluorine, chlorine, bromine and iodine

    摘要翻译: 本发明涉及一种光伏电池和一种用于生产包括式(I)或(II)的光伏活性半导体材料的光伏电池的方法:<?in-line-formula description =“In-line Formulas”end = “lead”?> ZnTe(I)<?in-line-formula description =“In-line Formulas”end =“tail”?> <?in-line-formula description =“In-line Formulas”end =“lead “?”Zn 1-x Mn x Te(II)<?in-line-formula description =“In-line Formulas”end =“tail”?>其中 x为0.01至0.7,其中所述光伏活性半导体材料包括金属卤化物,其包含选自锗,锡,锑,铋和铜的金属和选自氟,氯,溴和 碘