High moment bilayer first pole piece layer of a write head with high
magnetic stability for promoting read signal symmetry of a read head
    1.
    发明授权
    High moment bilayer first pole piece layer of a write head with high magnetic stability for promoting read signal symmetry of a read head 失效
    具有高磁稳定性的写头的高倍双层第一极片层,用于提高读头的读信号对称性

    公开(公告)号:US6163442A

    公开(公告)日:2000-12-19

    申请号:US268551

    申请日:1999-03-15

    摘要: A high moment bilayer first pole piece layer of a write head has high magnetic stability for promoting read signal symmetry of a read sensor of a read head. The bilayer first pole piece layer has a first layer of nickel iron and a second layer of iron nitride. The iron nitride has a high magnetic moment for conducting more flux per volume than the nickel iron first layer. In a first aspect of the invention, the nickel iron first layer is highly stabilized by providing it with a negative magnetostriction so that a stress induced anisotropy (H.sub.K) supports an intrinsic uniaxial anisotropy (H.sub.K) of the nickel iron first layer. The iron nitride second layer is formed directly on the nickel iron first layer so that by magnetic coupling the iron nitride second layer has significantly improved magnetic stability. In a second aspect of the invention the iron nitride second layer is provided with a positive magnetostriction which still further increases the magnetic stability of the bilayer first pole piece layer. In a preferred embodiment a net magnetostriction is zero or near zero. Each aspect of the invention improves the asymmetry sigma of the read head.

    摘要翻译: 写头的高倍数双层第一极片层具有高的磁稳定性,用于提高读取头的读取传感器的读取信号对称性。 双层第一极片层具有第一层镍铁和第二层氮化铁。 氮化铁具有高的磁矩,用于比镍铁第一层传导更多的磁通量。 在本发明的第一方面,镍铁第一层通过提供负磁致伸缩来高度稳定,使得应力诱导各向异性(HK)支持镍铁第一层的固有单轴各向异性(HK)。 氮化铁第二层直接形成在镍铁第一层上,使得通过磁耦合,氮化铁第二层具有显着提高的磁稳定性。 在本发明的第二方面,氮化铁第二层被提供有正磁致伸缩,其进一步增加了双层第一极片层的磁稳定性。 在优选实施例中,净磁致伸缩为零或接近零。 本发明的每个方面改善了读取头的不对称性。

    Method for forming low profile multi-layer coil merged thin film magnetic head
    2.
    发明授权
    Method for forming low profile multi-layer coil merged thin film magnetic head 有权
    用于形成薄型多层线圈合并薄膜磁头的方法

    公开(公告)号:US06325947B1

    公开(公告)日:2001-12-04

    申请号:US09431393

    申请日:1999-11-01

    IPC分类号: B44C122

    摘要: A method for forming a merged thin film magnetic head having a first shield layer and a combined second shield and bottom pole piece layer arranged in a sandwich supporting a read sensor therebetween at the pole tip region. The combined second shield and bottom pole piece layer are magnetically coupled with the first shield layer at the pole tip end of the yoke region adjacent the read sensor, and overlaying and magnetically coupled with the first shield layer at the back gap region. A patterned opening is provided in the combined second shield and bottom pole piece layer at the yoke region thereof to expose the first shield layer and form a flat planarization surface thereon. A plurality of stacked thin film coil layers are provided in the patterned opening, and a top pole piece layer overlies the thin film coil at the yoke region, overlies the bottom pole piece at the pole tip region providing a pole tip and gap thereat, and overlies the bottom pole piece at the back gap region. The patterned opening which exposes the first shield layer allows the provision of a multi-layer coil while maintaining a low profile of the head.

    摘要翻译: 一种用于形成合并的薄膜磁头的方法,所述薄膜磁头具有第一屏蔽层和组合的第二屏蔽和底极片层,所述第二屏蔽层和底极片层以夹持状态支撑在极尖区域处的读取传感器。 组合的第二屏蔽和底极片层与邻近读取传感器的磁轭区域的极端部处的第一屏蔽层磁耦合,并且在后隙区域与第一屏蔽层重叠并磁耦合。 在组合的第二屏蔽层和底极片层中设置图案化的开口,以在其磁轭区域露出第一屏蔽层并在其上形成平坦的平坦化表面。 在图案化开口中设置多个堆叠的薄膜线圈层,并且顶极片层覆盖在磁轭区域处的薄膜线圈,在极尖部分处覆盖提供极尖和间隙的极极片,并且 在后隙区域覆盖底极片。 暴露第一屏蔽层的图案化开口允许提供多层线圈,同时保持头部的低轮廓。

    Low profile multi-layer coil merged thin film magnetic head
    3.
    发明授权
    Low profile multi-layer coil merged thin film magnetic head 失效
    薄型多层线圈合并薄膜磁头

    公开(公告)号:US6034848A

    公开(公告)日:2000-03-07

    申请号:US64932

    申请日:1998-04-22

    IPC分类号: G11B5/31 G11B5/33 G11B5/39

    摘要: Disclosed is a merged thin film magnetic head having a first shield layer and a combined second shield and bottom pole piece layer arranged in a sandwich supporting a read sensor therebetween at the pole tip region. The combined second shield and bottom pole piece layer are magnetically coupled with the first shield layer at the pole tip end of the yoke region adjacent the read sensor, and overlaying and magnetically coupled with the first shield layer at the back gap region. A patterned opening is provided in the combined second shield and bottom pole piece layer at the yoke region thereof to expose the first shield layer and form a flat planarization surface thereon. A plurality of stacked thin film coil layers are provided in the patterned opening, and a top pole piece layer overlies the thin film coil at the yoke region, overlies the bottom pole piece at the pole tip region providing a pole tip and gap thereat, and overlies the bottom pole piece at the back gap region. The patterned opening which exposes the first shield layer allows the provision of a multi-layer coil while maintaining a low profile of the head.

    摘要翻译: 公开了一种合并的薄膜磁头,其具有第一屏蔽层和组合的第二屏蔽层和底极片层,其布置成在极尖区域处支撑读取传感器的夹层。 组合的第二屏蔽和底极片层与邻近读取传感器的磁轭区域的极端部处的第一屏蔽层磁耦合,并且在后隙区域与第一屏蔽层重叠并磁耦合。 在组合的第二屏蔽层和底极片层中设置图案化的开口,以在其磁轭区域露出第一屏蔽层并在其上形成平坦的平坦化表面。 在图案化开口中设置多个堆叠的薄膜线圈层,并且顶极片层覆盖在磁轭区域处的薄膜线圈,在极尖部分处覆盖提供极尖和间隙的极极片,并且 在后隙区域覆盖底极片。 暴露第一屏蔽层的图案化开口允许提供多层线圈,同时保持头部的低轮廓。

    Orthogonal spin valve sensor with reduced net field
    4.
    发明授权
    Orthogonal spin valve sensor with reduced net field 失效
    正交自旋阀传感器减少净场

    公开(公告)号:US5828530A

    公开(公告)日:1998-10-27

    申请号:US857425

    申请日:1997-05-16

    IPC分类号: G11B5/00 G11B5/012 G11B5/39

    摘要: An orthogonal spin valve read head is provided wherein a spin valve sensor is asymmetrically located between first and second shield layers so that image currents in the first and second shield layers produce a resultant image field which partially or completely counterbalances a stiffening field from antiferromagnetic, pinned and spacer layers in the MR sensor when sense current is conducted therethrough. Accordingly, the spin valve sensor may be located a greater distance from the second shield layer by providing a mid-gap layer between the spin valve sensor and a second gap layer. In one example, the total thickness of the mid-gap and second gap layer is four times as thick as the first gap layer which results in the image fields from the first and second shield layers completely counterbalancing the field from the antiferromagnetic, pinned and spacer layers due to the sense current.

    摘要翻译: 提供了一种正交自旋阀读头,其中自旋阀传感器不对称地位于第一和第二屏蔽层之间,使得第一和第二屏蔽层中的图像电流产生所得到的图像场,其部分地或完全地抵消来自反铁磁,固定的 以及当通过其传导感应电流时MR传感器中的间隔层。 因此,通过在自旋阀传感器和第二间隙层之间提供中间间隔层,自旋阀传感器可以位于比第二屏蔽层更大的距离处。 在一个示例中,中间间隙和第二间隙层的总厚度是第一间隙层的四倍,这导致来自第一和第二屏蔽层的图像场完全平衡场与反铁磁,固定和间隔物 层由于感应电流。

    Highly sensitive orthogonal spin valve read head
    5.
    发明授权
    Highly sensitive orthogonal spin valve read head 失效
    高灵敏度正交自旋阀读头

    公开(公告)号:US5696656A

    公开(公告)日:1997-12-09

    申请号:US709549

    申请日:1996-09-06

    IPC分类号: G11B5/00 G11B5/012 G11B5/39

    摘要: An orthogonal spin valve read head is provided wherein a spin valve sensor is asymmetrically located between first and second shield layers so that image currents in the first and second shield layers produce a resultant image field which partially or completely counterbalances a stiffening field from antiferromagnetic, pinned and spacer layers in the MR sensor when sense current is conducted therethrough. Accordingly, the spin valve sensor may be located a greater distance from the second shield layer by providing a mid-gap layer between the spin valve sensor and a second gap layer. In one example, the total thickness of the mid-gap and second gap layer is four times as thick as the first gap layer which results in the image fields from the first and second shield layers completely counterbalancing the field from the antiferromagnetic, pinned and spacer layers due to the sense current.

    摘要翻译: 提供了一种正交自旋阀读头,其中自旋阀传感器不对称地位于第一和第二屏蔽层之间,使得第一和第二屏蔽层中的图像电流产生所得到的图像场,其部分地或完全地抵消来自反铁磁,固定的 以及当通过其传导感应电流时MR传感器中的间隔层。 因此,通过在自旋阀传感器和第二间隙层之间提供中间间隔层,自旋阀传感器可以位于比第二屏蔽层更大的距离处。 在一个示例中,中间间隙和第二间隙层的总厚度是第一间隙层的四倍,这导致来自第一和第二屏蔽层的图像场完全平衡场与反铁磁,固定和间隔物 层由于感应电流。

    Enhanced low profile magnet write head
    6.
    发明授权
    Enhanced low profile magnet write head 失效
    增强型低磁铁磁头

    公开(公告)号:US06687083B2

    公开(公告)日:2004-02-03

    申请号:US09935361

    申请日:2001-08-22

    IPC分类号: G11B5147

    摘要: An low profile inductive write head is provided to improve track definition and head efficiency and to reduce overcoat and pole tip protrusion and cracking caused by thermal expansion. A first insulation layer of an insulation stack enclosing the coil layer is formed of an non-magnetic inorganic insulator material such as aluminum oxide, silicon dioxide or titanium dioxide having a thickness of in the range of 0.2-0.3 microns. The thinner first insulation layer results in a significantly reduced slope of the insulation stack which decreases reflective notching during processing of the second pole tip to improve track definition. Improved thermal conduction properties of the inorganic insulator material improves heat sinking of the write coil reducing overcoat and pole tip protrusion and cracking at the pole tip/write gap layer interface.

    摘要翻译: 提供了一种低调的感应写头,以提高轨道清晰度和头部效率,并减少由热膨胀引起的外涂层和极尖突起和开裂。 封闭线圈层的绝缘堆叠的第一绝缘层由厚度为0.2-0.3微米的非磁性无机绝缘体材料例如氧化铝,二氧化硅或二氧化钛形成。 较薄的第一绝缘层导致绝缘堆叠的显着减小的斜率,这降低了在第二极尖的处理期间的反射缝合,以改善轨道定义。 无机绝缘体材料的改进的导热性能改善了写入线圈的散热,从而减小了极尖/写入间隙层界面处的外涂层和极尖突起以及开裂。

    Fully-pinned, flux-closed spin valve
    7.
    发明授权
    Fully-pinned, flux-closed spin valve 失效
    全固定,通量封闭自旋阀

    公开(公告)号:US06175475B1

    公开(公告)日:2001-01-16

    申请号:US09085654

    申请日:1998-05-27

    IPC分类号: G11B539

    摘要: A fully-pinned, flux-closed spin valve (SV) magnetoresistive sensor having a reference (pinned) layer with magnetization fixed by a first antiferromagnetic (AFM1) layer, and a keeper layer with magnetization fixed by a second antiferromagnetic (AFM2) layer. The magnetization of the keeper layer is saturated and fixed in an antiparallel orientation to the pinned layer magnetization by an exchange interaction with the AFM2 layer. The magnetic moments of the pinned layer and the keeper layer are approximately matched to form a flux-closed magnetic configuration wherein demagnetizing fields in the pinned layer are largely canceled and magnetostatic interaction with the free layer is reduced. Saturation of the keeper layer magnetization by exchange coupling with the AFM2 layer eliminates or reduces magnetization canting at the edges of the keeper layer which can result in signal field shunting through the keeper layer. AFM1 and AFM2 layers may be formed of the same antiferromagnetic material, such as NiO, or alternatively may be formed of different antiferromagnetic materials, such as Ni—Mn and NiO, respectively.

    摘要翻译: 具有由第一反铁磁(AFM1)层固定的磁化的参考(固定)层的完全固定的磁通闭合自旋阀(SV)磁阻传感器,以及具有由第二反铁磁(AFM2)层固定的磁化的保持层。 通过与AFM2层的交换相互作用,保持层的磁化饱和并且以反平行取向固定到被钉层磁化。 被钉扎层和保持层的磁矩近似匹配以形成磁通闭合磁性构造,其中被钉扎层中的去磁场被大大抵消,并且与自由层的静磁相互作用减小。 通过与AFM2层的交换耦合来保持层层磁化的饱和度消除或减少了在保持层的边缘处的磁化倾斜,这可导致通过保持层的信号场分流。 AFM1和AFM2层可以由相同的反铁磁材料(例如NiO)形成,或者可以分别由不同的反铁磁材料(诸如Ni-Mn和NiO)形成。

    ESD protection during GMR head fabrication
    8.
    发明授权
    ESD protection during GMR head fabrication 失效
    GMR头制造期间的ESD保护

    公开(公告)号:US06470566B2

    公开(公告)日:2002-10-29

    申请号:US09754139

    申请日:2001-01-03

    IPC分类号: G11B5127

    摘要: To protect the MR read head element from ESD damage during wafer level manufacturing, a lead from the MR element is electrically connected to one or both of the read head element shields during manufacturing. In a preferred embodiment of the present invention, the electrical connection is fabricated in the kerf area between adjacent magnetic heads as they are fabricated upon a wafer substrate. Thereafter, when the magnetic heads are separated by saw cutting through the kerf areas, the electrical connections are thereby removed, such that the MR element electrical leads and the shields are electrically isolated. In an alternative embodiment, one or more of the shields, as well as the MR element leads can also be electrically connected to the substrate upon which the magnetic head is fabricated. In further alternative embodiments, the electrical connection between one or more of the shields and the MR element electrical lead can be fabricated within the magnetic head area, rather than in the kerf area, and a suitable resistance is fabricated into the interconnecting circuit. In this embodiment, the electrical interconnection between the MR element electrical lead and one or more of the shields has a pre-designed electrical resistance and it remains in the magnetic head following fabrication.

    摘要翻译: 为了在晶片级制造期间保护MR读取头元件免受ESD损坏,来自MR元件的引线在制造期间电连接到读头元件屏蔽中的一个或两个。 在本发明的优选实施例中,当在晶片衬底上制造时,在相邻磁头之间的切口区域中制造电连接。 此后,当通过锯切通过切口区域分离磁头时,由此去除电连接,使得MR元件电引线和屏蔽件电隔离。 在替代实施例中,一个或多个屏蔽件以及MR元件引线也可以电连接到其上制造磁头的基板。 在另外的替代实施例中,一个或多个屏蔽件和MR元件电引线之间的电连接可以制造在磁头区域内,而不是在切口区域中,并且在互连电路中制造合适的电阻。 在该实施例中,MR元件电引线与一个或多个屏蔽之间的电互连具有预先设计的电阻,并且在制造之后它保持在磁头中。

    Spin valves with high uniaxial anisotropy reference and keeper layers
    9.
    发明授权
    Spin valves with high uniaxial anisotropy reference and keeper layers 失效
    具有高单轴各向异性参考和保持层的旋转阀

    公开(公告)号:US6127053A

    公开(公告)日:2000-10-03

    申请号:US85981

    申请日:1998-05-27

    IPC分类号: G11B5/66

    摘要: An SV sensor having a reference (pinned) layer formed of a first high uniaxial anisotropy ferromagnetic material, such as Co--Fe, and a keeper layer formed of a second high uniaxial anisotropy ferromagnetic material, such as Ni--Fe--Nb. Lapping induced stress in the Co--Fe layer having high positive magnetostriction generates a stress-induced uniaxial anisotropy field in the reference layer resulting in enhanced reference layer magnetization. This uniaxial anisotropy field is capable by itself of maintaining a substantial transverse reference layer saturation even at elevated temperatures. Lapping induced stress in the Ni--Fe--Nb layer having high positive magnetostriction generates a stress-induced uniaxial anisotropy field in the keeper layer providing more uniform magnetization and therefore better flux cancellation. The high electrical resistivity of the Ni--Fe--Nb keeper layer has the further benefit of reducing sense current shunting by the keeper layer.

    摘要翻译: 具有由诸如Co-Fe的第一高单轴各向异性铁磁材料形成的参考(钉扎)层的SV传感器和由第二高单轴各向异性铁磁材料如Ni-Fe-Nb形成的保持层。 在具有高正磁致伸缩的Co-Fe层中的研磨诱导应力在参考层中产生应力诱导的单轴各向异性场,导致增强的参考层磁化强度。 该单轴各向异性场本身即使在升高的温度下也能维持相当大的横向参考层饱和度。 具有高正磁致伸缩性的Ni-Fe-Nb层中的研磨诱导应力在保持层中产生应力诱导的单轴各向异性场,从而提供更均匀的磁化强度,从而提供更好的磁通消除。 Ni-Fe-Nb保持层的高电阻率进一步降低了保持层感应电流分流的好处。

    Apparatus and method for intra process on wafer monitoring of deposited
layer permeability
    10.
    发明授权
    Apparatus and method for intra process on wafer monitoring of deposited layer permeability 失效
    用于晶片监测沉积层渗透性的内部工艺的装置和方法

    公开(公告)号:US5710510A

    公开(公告)日:1998-01-20

    申请号:US692685

    申请日:1996-08-06

    摘要: A monitoring apparatus is provided for determining permeabilities of a vacuum-deposited second pole piece of a magnetic head at the wafer level by providing wafer-mounted monitors which have layers formed by the same masking and deposition steps employed in making the magnetic heads so that the layers of the monitors are replicated layers, except for a shaping layer on top of a replicated second pole piece of some of the monitors. Each monitor is a transformer wherein each of a primary winding and a secondary winding comprises essentially a replicated magnetic head. The first and second pole pieces of the replicated magnetic heads are joined so as to magnetically couple the primary and secondary windings that constitute the transformer. The replicated shaping layer is omitted in part to expose a portion of one of the replicated second pole pieces of a monitor, such as the front slope, the back slope or the yoke portion of the replicated second pole piece which corresponds to the front slope, the back slope or yoke respectively of the magnetic head. When a current is conducted through the replicated coils of the monitor a voltage reading can be taken to indicate the permeability of the exposed portion of the replicated second pole piece of the monitor.

    摘要翻译: 提供一种监测装置,用于通过提供晶片安装的监视器来确定晶片级的磁头的真空沉积的第二极靴的磁导率,所述晶片安装的监视器具有通过在制造磁头中使用相同的掩蔽和沉积步骤形成的层, 监视器的层是复制层,除了在一些监视器的复制的第二极片之上的成形层之外。 每个监视器是变压器,其中初级绕组和次级绕组中的每一个基本上包括复制的磁头。 复制磁头的第一和第二极片接合,以磁耦合构成变压器的初级和次级绕组。 复制的成形层部分省略以暴露监视器的一个复制的第二极片的一部分,例如对应于前斜面的复制的第二极片的前斜面,后斜面或轭部, 分别是磁头的后斜面或轭。 当通过监视器的复制线圈传导电流时,可以采取电压读数来指示监视器的复制的第二极片的暴露部分的磁导率。