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    In-situ cleaning of a polymer coated plasma processing chamber
    1.
    发明授权
    In-situ cleaning of a polymer coated plasma processing chamber 有权
    聚合物涂层等离子体处理室的原位清洗

    公开(公告)号：US06994769B2

    公开(公告)日：2006-02-07

    申请号：US10881112

    申请日：2004-06-29

    申请人： Harmeet Singh ,  John E. Daugherty ,  Vahid Vahedi ,  Saurabh J. Ullal

    发明人： Harmeet Singh ,  John E. Daugherty ,  Vahid Vahedi ,  Saurabh J. Ullal

    IPC分类号： C23F1/00

    CPC分类号： H01J37/32862 ,  C23C16/4404 ,  C23C16/4405 ,  H01J37/321 ,  Y10S134/902 ,  Y10S438/905

    摘要： An apparatus configured to remove chamber deposits between process operations is provided. The processing chamber includes a top electrode in communication with a power supply. A processing chamber defined within a base, a sidewall extending from the base, and a top disposed on the sidewall is provided. The processing chamber has an outlet enabling removal of fluids within the processing chamber. The processing chamber includes a substrate support and an inner surface of the processing chamber defined by the base, the sidewall and the top. The inner surface is coated with a fluorine containing polymer coating. The fluorine containing polymer coating is configured to release fluorine upon creation of an oxygen plasma in the processing chamber to remove a residue deposited on the fluorine containing polymer coating. The residue was deposited on the polymer coating from a processing operation performed in the processing chamber.

    摘要翻译： 提供一种被配置为在处理操作之间去除室沉积物的装置。 处理室包括与电源连通的顶部电极。 设置在基座内的处理室，从基座延伸的侧壁和设置在侧壁上的顶部。 处理室具有能够去除处理室内的流体的出口。 处理室包括基板支撑件和由基座，侧壁和顶部限定的处理室的内表面。 内表面涂有含氟聚合物涂层。 含氟聚合物涂层被配置为在处理室中产生氧等离子体时释放氟以除去沉积在含氟聚合物涂层上的残余物。 残留物从处理室中进行的处理操作沉积在聚合物涂层上。

    In-situ cleaning of a polymer coated plasma processing chamber
    2.
    发明授权
    In-situ cleaning of a polymer coated plasma processing chamber 有权
    聚合物涂层等离子体处理室的原位清洗

    公开(公告)号：US06776851B1

    公开(公告)日：2004-08-17

    申请号：US10186917

    申请日：2002-06-28

    申请人： Harmeet Singh ,  John E. Daugherty ,  Vahid Vahedi ,  Saurabh J. Ullal

    发明人： Harmeet Singh ,  John E. Daugherty ,  Vahid Vahedi ,  Saurabh J. Ullal

    IPC分类号： B08B300

    CPC分类号： H01J37/32862 ,  C23C16/4404 ,  C23C16/4405 ,  H01J37/321 ,  Y10S134/902 ,  Y10S438/905

    摘要： A method for removing chamber deposits in between process operations in a semiconductor process chamber is provided. The method initiates with depositing a fluorine containing polymer layer over an inner surface of a semiconductor process chamber where the semiconductor chamber is empty. Then, a wafer is introduced into the semiconductor process chamber after depositing the fluorine containing polymer layer. Next, a process operation is performed on the wafer. The process operation deposits a residue on the fluorine containing polymer layer covering the inner surface of the semiconductor process chamber. Then, the wafer is removed from the semiconductor process chamber. Next, an oxygen based cleaning operation is performed. The oxygen based cleaning operation liberates fluorine from the fluorine containing polymer layer to remove a silicon based residue. An apparatus configured to remove chamber deposits between process operations is also provided.

    摘要翻译： 提供了一种用于在半导体处理室中的处理操作之间去除室沉积物的方法。 该方法通过在半导体处理室的内表面上沉积含氟聚合物层而开始，其中半导体室是空的。 然后，在沉积含氟聚合物层之后将晶片引入半导体处理室。 接下来，对晶片进行处理操作。 处理操作在覆盖半导体处理室的内表面的含氟聚合物层上沉积残留物。 然后，将晶片从半导体处理室中取出。 接下来，进行氧气清洗操作。 基于氧的清洗操作从含氟聚合物层中释放氟以除去硅基残渣。 还提供了一种被配置为在处理操作之间去除室沉积物的装置。

    Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof
    6.
    发明授权
    Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof 有权
    氧化锆增韧陶瓷部件和半导体加工设备中的涂层及其制造方法

    公开(公告)号：US07255898B2

    公开(公告)日：2007-08-14

    申请号：US10442980

    申请日：2003-05-22

    申请人： Robert J. O'Donnell ,  Christopher C. Chang ,  John E. Daugherty

    发明人： Robert J. O'Donnell ,  Christopher C. Chang ,  John E. Daugherty

    IPC分类号： B05D1/02 ,  C23C16/40

    CPC分类号： H01J37/32477 ,  C23C14/083 ,  C23C16/405 ,  Y10T428/265

    摘要： A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises zirconia toughened ceramic material as an outermost surface of the component. The component can be made entirely of the ceramic material or the ceramic material can be provided as a coating on a substrate such as aluminum or aluminum alloy, stainless steel, or refractory metal. The zirconia toughened ceramic can be tetragonal zirconia polycrystalline (TZP) material, partially-stabilized zirconia (PSZ), or a zirconia dispersion toughened ceramic (ZTC) such as zirconia-toughened alumina (tetragonal zirconia particles dispersed in Al2O3). In the case of a ceramic zirconia toughened coating, one or more intermediate layers may be provided between the component and the ceramic coating. To promote adhesion of the ceramic coating, the component surface or the intermediate layer surface may be subjected to a surface roughening treatment prior to depositing the ceramic coating.

    摘要翻译： 诸如等离子体室的半导体加工设备的耐腐蚀部件包括作为部件的最外表面的氧化锆增韧陶瓷材料。 该组件可以完全由陶瓷材料制成，或者陶瓷材料可以作为涂层提供在诸如铝或铝合金，不锈钢或难熔金属的基底上。 氧化锆增韧陶瓷可以是四方晶氧化锆多晶（TZP）材料，部分稳定的氧化锆（PSZ）或氧化锆分散体增韧陶瓷（ZTC），如氧化锆增韧的氧化铝（分散在Al 2+中的四方晶氧化锆颗粒） SUB> O 3 3）。 在陶瓷氧化锆增韧涂层的情况下，可以在组件和陶瓷涂层之间提供一个或多个中间层。 为了促进陶瓷涂层的粘合，可以在沉积陶瓷涂层之前对组分表面或中间层表面进行表面粗糙化处理。

    Methods of finishing quartz glass surfaces and components made by the methods
    9.
    发明授权
    Methods of finishing quartz glass surfaces and components made by the methods 有权
    石英玻璃表面和组件的精加工方法

    公开(公告)号：US08318035B2

    公开(公告)日：2012-11-27

    申请号：US11812902

    申请日：2007-06-22

    申请人： Mark W. Kiehlbauch ,  John E. Daugherty

    发明人： Mark W. Kiehlbauch ,  John E. Daugherty

    IPC分类号： C03C15/00 ,  C03C25/68 ,  C23F1/00

    CPC分类号： C03C23/0075 ,  C03C15/00 ,  C03C19/00 ,  C03C2204/08 ,  Y10S438/905 ,  Y10S438/906

    摘要： Methods of surface finishing a component useful for a plasma processing apparatus are provided. The component includes at least one plasma-exposed quartz glass surface. The method includes mechanically polishing, chemically etching and cleaning the plasma-exposed surface to achieve a desired surface morphology. Quartz glass sealing surfaces of the component also can be finished by the methods. Plasma-exposed surface and sealing surfaces of the same component can be finished to different surface morphologies from each other.

    摘要翻译： 提供表面处理用于等离子体处理装置的部件的方法。 该组件包括至少一个等离子体暴露的石英玻璃表面。 该方法包括机械抛光，化学蚀刻和清洁等离子体暴露表面以实现期望的表面形态。 石英玻璃密封面的组件也可以通过这种方法完成。 等离子体暴露的表面和相同部件的密封表面可以被完成为不同的表面形态彼此。

    Methods of finishing quartz glass surfaces and components made by the methods
    10.
    发明授权
    Methods of finishing quartz glass surfaces and components made by the methods 有权
    石英玻璃表面和组件的精加工方法

    公开(公告)号：US07250114B2

    公开(公告)日：2007-07-31

    申请号：US10448422

    申请日：2003-05-30

    申请人： Mark W. Kiehlbauch ,  John E. Daugherty

    发明人： Mark W. Kiehlbauch ,  John E. Daugherty

    IPC分类号： B44C1/22 ,  H01L21/00

    CPC分类号： C03C23/0075 ,  C03C15/00 ,  C03C19/00 ,  C03C2204/08 ,  Y10S438/905 ,  Y10S438/906

    摘要： Methods of surface finishing a component useful for a plasma processing apparatus are provided. The component includes at least one plasma-exposed quartz glass surface. The method includes mechanically polishing, chemically etching and cleaning the plasma-exposed surface to achieve a desired surface morphology. Quartz glass sealing surfaces of the component also can be finished by the methods. Plasma-exposed surface and sealing surfaces of the same component can be finished to different surface morphologies from each other.

    摘要翻译： 提供表面处理用于等离子体处理装置的部件的方法。 该组件包括至少一个等离子体暴露的石英玻璃表面。 该方法包括机械抛光，化学蚀刻和清洁等离子体暴露表面以实现期望的表面形态。 石英玻璃密封面的组件也可以通过这种方法完成。 等离子体暴露的表面和相同部件的密封表面可以被完成为不同的表面形态彼此。