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    Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof
    3.
    发明授权
    Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof 有权
    氧化锆增韧陶瓷部件和半导体加工设备中的涂层及其制造方法

    公开(公告)号：US07255898B2

    公开(公告)日：2007-08-14

    申请号：US10442980

    申请日：2003-05-22

    申请人： Robert J. O'Donnell ,  Christopher C. Chang ,  John E. Daugherty

    发明人： Robert J. O'Donnell ,  Christopher C. Chang ,  John E. Daugherty

    IPC分类号： B05D1/02 ,  C23C16/40

    CPC分类号： H01J37/32477 ,  C23C14/083 ,  C23C16/405 ,  Y10T428/265

    摘要： A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises zirconia toughened ceramic material as an outermost surface of the component. The component can be made entirely of the ceramic material or the ceramic material can be provided as a coating on a substrate such as aluminum or aluminum alloy, stainless steel, or refractory metal. The zirconia toughened ceramic can be tetragonal zirconia polycrystalline (TZP) material, partially-stabilized zirconia (PSZ), or a zirconia dispersion toughened ceramic (ZTC) such as zirconia-toughened alumina (tetragonal zirconia particles dispersed in Al2O3). In the case of a ceramic zirconia toughened coating, one or more intermediate layers may be provided between the component and the ceramic coating. To promote adhesion of the ceramic coating, the component surface or the intermediate layer surface may be subjected to a surface roughening treatment prior to depositing the ceramic coating.

    摘要翻译： 诸如等离子体室的半导体加工设备的耐腐蚀部件包括作为部件的最外表面的氧化锆增韧陶瓷材料。 该组件可以完全由陶瓷材料制成，或者陶瓷材料可以作为涂层提供在诸如铝或铝合金，不锈钢或难熔金属的基底上。 氧化锆增韧陶瓷可以是四方晶氧化锆多晶（TZP）材料，部分稳定的氧化锆（PSZ）或氧化锆分散体增韧陶瓷（ZTC），如氧化锆增韧的氧化铝（分散在Al 2+中的四方晶氧化锆颗粒） SUB> O 3 3）。 在陶瓷氧化锆增韧涂层的情况下，可以在组件和陶瓷涂层之间提供一个或多个中间层。 为了促进陶瓷涂层的粘合，可以在沉积陶瓷涂层之前对组分表面或中间层表面进行表面粗糙化处理。

    Methods for etching an aluminum-containing layer
    6.
    发明授权
    Methods for etching an aluminum-containing layer 失效
    蚀刻含铝层的方法

    公开(公告)号：US5994235A

    公开(公告)日：1999-11-30

    申请号：US103498

    申请日：1998-06-24

    申请人： Robert J. O'Donnell

    发明人： Robert J. O'Donnell

    IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/00

    CPC分类号： H01L21/32136 ,  C23F4/00 ,  Y10T428/12028 ,  Y10T428/12493 ,  Y10T428/249954

    摘要： A method for etching selected portions of an aluminum-containing layer of a layer stack that is disposed on a substrate. The aluminum-containing layer is disposed below a photoresist mask having a pattern thereon. The method includes providing a plasma processing chamber and positioning the substrate having thereon the layer stack, including the aluminum containing layer and the photoresist mask, within the plasma processing chamber. The method further includes flowing an etchant source gas that comprises HCl, a chlorine-containing source gas, and an oxygen-containing source gas into the plasma processing chamber. The flow rate of the oxygen-containing source gas is less than about 20 percent of a total flow rate of the etchant source gas. There is also included striking a plasma out of the etchant source gas, wherein the plasma is employed to etch at least partially through the aluminum-containing layer.

    摘要翻译： 一种用于蚀刻设置在基板上的层叠体的含铝层的选定部分的方法。 含铝层设置在其上具有图案的光致抗蚀剂掩模下方。 该方法包括提供等离子体处理室并将其上具有包括铝包层和光刻胶掩模的层堆叠的衬底定位在等离子体处理室内。 该方法还包括将包含HCl，含氯源气体和含氧源气体的蚀刻剂源气体流入等离子体处理室。 含氧源气体的流量小于蚀刻剂源气体的总流量的约20％。 还包括从蚀刻剂源气体中冲出等离子体，其中使用等离子体至少部分地蚀刻通过含铝层。