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    Technique for boron implantation
    1.
    发明授权
    Technique for boron implantation 有权
    硼植入技术

    公开(公告)号：US07397048B2

    公开(公告)日：2008-07-08

    申请号：US11227079

    申请日：2005-09-16

    申请人： Vikram Singh ,  Edmund J. Winder ,  Harold M. Persing ,  Timothy Jerome Miller ,  Ziwei Fang ,  Atul Gupta

    发明人： Vikram Singh ,  Edmund J. Winder ,  Harold M. Persing ,  Timothy Jerome Miller ,  Ziwei Fang ,  Atul Gupta

    IPC分类号： H05H1/42

    CPC分类号： H01L21/2236 ,  H01J37/32082 ,  H01J37/32412 ,  H01L21/26513

    摘要： A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.

    摘要翻译： 公开了硼注入技术。 在一个特定的示例性实施例中，该技术可以由用于硼注入的装置来实现。 该装置可以包括反应室。 该装置还可以包含耦合到反应室的五硼烷的源，其中源能够将基本上纯的形式的五硼烷供应到反应室中。 该装置还可以包括电源，其被配置为充分激发反应室中的五硼烷以产生具有含硼离子的等离子体放电。

    Plasma Doping System with In-Situ Chamber Condition Monitoring
    2.
    发明申请
    Plasma Doping System with In-Situ Chamber Condition Monitoring 审中-公开
    等离子体掺杂系统与原位室状态监测

    公开(公告)号：US20090104719A1

    公开(公告)日：2009-04-23

    申请号：US11877312

    申请日：2007-10-23

    申请人： Atul Gupta ,  Timothy Miller ,  Harold M. Persing ,  Daniel Distaso ,  Vikram Singh

    发明人： Atul Gupta ,  Timothy Miller ,  Harold M. Persing ,  Daniel Distaso ,  Vikram Singh

    IPC分类号： H01L21/66

    CPC分类号： H01L22/20 ,  H01L22/12

    摘要： A method of in-situ monitoring of a plasma doping process includes generating a plasma comprising dopant ions in a chamber proximate to a platen supporting a substrate. A platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A dose of ions attracted to the substrate is measured. At least one sensor measurement is performed to determine the condition of the plasma chamber. In addition, at least one plasma process parameter is modified in response to the measured dose and in response to the at least one sensor measurement.

    摘要翻译： 等离子体掺杂过程的原位监测方法包括在靠近支撑衬底的压板的腔室中产生包含掺杂剂离子的等离子体。 压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。 测量吸附到基底的一定剂量的离子。 执行至少一个传感器测量以确定等离子体室的状态。 此外，至少一个等离子体处理参数响应于测量的剂量并且响应于至少一个传感器测量而被修改。

    Plasma Doping System With Charge Control
    3.
    发明申请
    Plasma Doping System With Charge Control 审中-公开
    带充电控制的等离子体掺杂系统

    公开(公告)号：US20090104761A1

    公开(公告)日：2009-04-23

    申请号：US11875062

    申请日：2007-10-19

    申请人： Yongbae Jeon ,  Vikram Singh ,  Timothy Miller ,  Ziwei Fang ,  Steven Walther ,  Atul Gupta

    发明人： Yongbae Jeon ,  Vikram Singh ,  Timothy Miller ,  Ziwei Fang ,  Steven Walther ,  Atul Gupta

    IPC分类号： H01L21/26 ,  C23C16/513

    CPC分类号： H01J37/32642 ,  H01J37/32412 ,  H01J37/32935

    摘要： A method of plasma doping includes generating a plasma comprising dopant ions proximate to a platen supporting a substrate in a plasma chamber. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. At least one sensor measuring data related to charging conditions favorable for forming an electrical discharge is monitored. At least one plasma process parameter is modified in response to the measured data, thereby reducing a probability of forming an electrical discharge.

    摘要翻译： 等离子体掺杂的方法包括产生等离子体，该等离子体包括邻近于在等离子体室中支撑衬底的压板的掺杂剂离子。 压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。 监测至少一个测量与有利于形成放电的充电条件有关的数据的传感器。 响应于测量数据修改至少一个等离子体处理参数，从而降低形成放电的可能性。

    Technique for boron implantation
    4.
    发明申请
    Technique for boron implantation 有权
    硼植入技术

    公开(公告)号：US20060063360A1

    公开(公告)日：2006-03-23

    申请号：US11227079

    申请日：2005-09-16

    申请人： Vikram Singh ,  Edmund Winder ,  Harold Persing ,  Timothy Miller ,  Ziwei Fang ,  Atul Gupta

    发明人： Vikram Singh ,  Edmund Winder ,  Harold Persing ,  Timothy Miller ,  Ziwei Fang ,  Atul Gupta

    IPC分类号： H01L21/04

    CPC分类号： H01L21/2236 ,  H01J37/32082 ,  H01J37/32412 ,  H01L21/26513

    摘要： A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.

    摘要翻译： 公开了硼注入技术。 在一个特定的示例性实施例中，该技术可以由用于硼注入的装置来实现。 该装置可以包括反应室。 该装置还可以包含耦合到反应室的五硼烷的源，其中源能够将基本上纯的形式的五硼烷供应到反应室中。 该装置还可以包括电源，其被配置为充分激发反应室中的五硼烷以产生具有含硼离子的等离子体放电。

    Etch and deposition control for plasma implantation
    5.
    发明申请
    Etch and deposition control for plasma implantation 审中-公开
    用于等离子体植入的蚀刻和沉积控制

    公开(公告)号：US20050287307A1

    公开(公告)日：2005-12-29

    申请号：US10874944

    申请日：2004-06-23

    申请人： Vikram Singh ,  Harold Persing ,  Timothy Miller ,  Atul Gupta ,  Ziwei Fang

    发明人： Vikram Singh ,  Harold Persing ,  Timothy Miller ,  Atul Gupta ,  Ziwei Fang

    IPC分类号： C03C15/00 ,  C23C14/00 ,  H01L21/223

    CPC分类号： H01L21/2236 ,  H01J37/32412

    摘要： A method for ion implantation of a substrate includes forming a plasma from at least one implant material comprising at least one implant species, implanting the at least one implant species into a surface of the substrate, and directing at least one surface-modifying species at the surface to reduce a surface damage associated with the plasma. An apparatus for ion implantation is configured to implement this method.

    摘要翻译： 用于离子植入衬底的方法包括从至少一种植入材料形成等离子体，所述至少一种植入材料包括至少一种植入物种，将所述至少一种植入物种植入所述基质的表面，以及将所述至少一种表面改性物质 表面以减少与等离子体相关的表面损伤。 用于离子注入的装置被配置为实现该方法。

    CONFORMAL DOPING APPARATUS AND METHOD
    6.
    发明申请
    CONFORMAL DOPING APPARATUS AND METHOD 审中-公开
    一致的装置和方法

    公开(公告)号：US20070084564A1

    公开(公告)日：2007-04-19

    申请号：US11163303

    申请日：2005-10-13

    申请人： Atul Gupta ,  Edmund Winder ,  Vikram Singh ,  Harold Persing

    发明人： Atul Gupta ,  Edmund Winder ,  Vikram Singh ,  Harold Persing

    IPC分类号： C23F1/00

    CPC分类号： H01J37/321 ,  H01J37/32412 ,  H01L21/26513 ,  H01L21/26526 ,  H01L21/2658 ,  H01L21/26586 ,  H01L29/66803

    摘要： A doping apparatus includes a chamber and a plasma source. The plasma source generates dopant ions from a feed gas and provides the dopant ions to the chamber. A platen is positioned in the chamber proximate to the plasma source. The platen supports a substrate having planar and nonplanar features. At least one of a pressure proximate to the substrate, a flow rate of the feed gas, a power of the plasma, and a voltage applied to the platen is chosen so that dopant ions are implanted into both the planar and non-planar nonplanar features surfaces of the substrate.

    摘要翻译： 掺杂装置包括腔室和等离子体源。 等离子体源从进料气体产生掺杂剂离子，并将掺杂剂离子提供给室。 压板位于室中，靠近等离子体源。 压板支撑具有平面和非平面特征的衬底。 选择靠近衬底的压力，进料气体的流速，等离子体的功率和施加到压板的电压中的至少一个，使得掺杂剂离子注入平面和非平面非平面特征 基板的表面。

    In-situ process chamber preparation methods for plasma ion implantation systems
    7.
    发明申请
    In-situ process chamber preparation methods for plasma ion implantation systems 审中-公开
    等离子体离子注入系统的原位处理室制备方法

    公开(公告)号：US20050260354A1

    公开(公告)日：2005-11-24

    申请号：US10850222

    申请日：2004-05-20

    申请人： Vikram Singh ,  Atul Gupta ,  Harold Persing ,  Steven Walther ,  Anne Testoni

    发明人： Vikram Singh ,  Atul Gupta ,  Harold Persing ,  Steven Walther ,  Anne Testoni

    IPC分类号： H01J37/32 ,  C23C14/00 ,  C23C16/00

    CPC分类号： H01J37/32495 ,  H01J37/32412

    摘要： A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system including a process chamber, a source for producing a plasma in the process chamber, a platen for holding the substrate in the process chamber, and a voltage source for accelerating ions from the plasma into the substrate, depositing on interior surfaces of the process chamber a fresh coating that is similar in composition to a deposited film that results from plasma ion implantation of the substrate, before depositing the fresh coating, cleaning interior surfaces of the process chamber by removing an old film using one or more activated cleaning precursors, plasma ion implantation of the substrate according to a plasma ion implantation process, and repeating the steps of cleaning interior surfaces of the process chamber and depositing a fresh coating following plasma ion implantation of one or more substrates.

    摘要翻译： 用于等离子体离子注入衬底的方法包括提供等离子体离子注入系统，其包括处理室，用于在处理室中产生等离子体的源，用于将衬底保持在处理室中的压板和用于加速离子的电压源 从等离子体进入衬底，在沉积新鲜涂层之前，在沉积新鲜涂层之前，在处理室的内表面上沉积与组合物中与等离子体离子注入导致的沉积膜相似的新涂层，清洁处理室的内表面 通过使用一种或多种激活的清洁前体去除旧膜，根据等离子体离子注入工艺等离子体离子注入基板，并重复清洁处理室的内表面并在等离子体离子注入之后沉积新涂层的步骤 或更多的基材。