公开(公告)号：US06893956B2

公开(公告)日：2005-05-17

申请号：US10403483

申请日：2003-03-31

申请人： Hartmut Ruelke ,  Joerg Hohage ,  Thomas Werner ,  Massud Aminpur

发明人： Hartmut Ruelke ,  Joerg Hohage ,  Thomas Werner ,  Massud Aminpur

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/4763

CPC分类号： H01L21/76834 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76822 ,  H01L21/76826 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The effect of resist poisoning may be eliminated or at least substantially reduced in the formation of a low-k metallization layer, in that a nitrogen-containing barrier/etch stop layer is provided with a significantly reduced nitrogen concentration at an interface in contact with said low-k dielectric material. Consequently, diffusion of nitrogen and nitrogen compounds in vias formed in said low-k dielectric layer is significantly suppressed, so that in a subsequent photolithographic step, interaction of nitrogen and nitrogen compounds with the photoresist is remarkably reduced.

摘要翻译： 在低k金属化层的形成中可以消除或至少显着地减少抗蚀剂中毒的作用，因为含氮势垒/蚀刻停止层在与所述的低k金属化层接触的界面处被提供显着降低的氮浓度 低k电介质材料。 因此，氮和氮化合物在所述低k电介质层中形成的通孔中的扩散被显着抑制，使得在随后的光刻步骤中，氮和氮化合物与光致抗蚀剂的相互作用显着降低。

公开(公告)号：US07030044B2

公开(公告)日：2006-04-18

申请号：US10463910

申请日：2003-06-16

申请人： Hartmut Ruelke ,  Joerg Hohage ,  Thomas Werner ,  Frank Mauersberger

发明人： Hartmut Ruelke ,  Joerg Hohage ,  Thomas Werner ,  Frank Mauersberger

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/3143 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3212 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/7684 ,  H01L21/76877 ,  Y10S438/952

摘要： A method of forming a multi-layer stack over a low-k dielectric layer is disclosed, wherein the multi-layer stack provides an improved anti-reflective effect and an enhanced protection of the underlying low-k dielectric material during the chemical mechanical polishing process. The multi-layer stack includes silicon dioxide based sub-layers, which may be formed in a highly efficient, non-expensive plasma enhanced deposition method, wherein the optical characteristics may be adjusted by varying a ratio of silane and nitrogen oxide during the deposition.

摘要翻译： 公开了一种在低k电介质层上形成多层堆叠的方法，其中多层堆叠在化学机械抛光工艺期间提供改进的抗反射效应和增强的底层低k电介质材料的保护 。 多层堆叠包括可以以高效，非昂贵的等离子体增强沉积方法形成的基于二氧化硅的子层，其中可以通过在沉积期间改变硅烷和氮氧化物的比例来调节光学特性。

公开(公告)号：US07022602B2

公开(公告)日：2006-04-04

申请号：US10716681

申请日：2003-11-19

申请人： Hartmut Ruelke ,  Joerg Hohage ,  Thomas Werner ,  Michael Kiene

发明人： Hartmut Ruelke ,  Joerg Hohage ,  Thomas Werner ,  Michael Kiene

IPC分类号： H01L21/4763 ,  H01L21/311

CPC分类号： H01L21/0234 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/3148 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76826 ,  H01L21/76834

摘要： The effect of resist poisoning may be eliminated or at least substantially reduced in the formation of a low-k metallization layer, in that a nitrogen-containing barrier layer is provided with a surface modified by plasma treatment. Consequently, diffusion of nitrogen and nitrogen compounds in vias formed in the low-k dielectric layer is significantly suppressed, so that in a subsequent photolithography step interaction of nitrogen and nitrogen compounds with the photoresist is remarkably reduced.

摘要翻译： 在低k金属化层的形成中可以消除或者至少显着降低抗蚀剂中毒的效果，因为含氮阻挡层具有通过等离子体处理改性的表面。 因此，在低k电介质层中形成的通孔中的氮和氮化合物的扩散被显着抑制，使得在随后的光刻步骤中氮和氮化合物与光致抗蚀剂的相互作用显着降低。

公开(公告)号：US07763547B2

公开(公告)日：2010-07-27

申请号：US11199526

申请日：2005-08-08

申请人： Thomas Werner ,  Matthias Schaller ,  Massud Aminpur

发明人： Thomas Werner ,  Matthias Schaller ,  Massud Aminpur

IPC分类号： H01L21/3065 ,  H01L21/302

CPC分类号： H01L21/31138 ,  H01L21/31116 ,  H01L21/76808 ,  H01L21/76834

摘要： In an etch process for forming via openings and trench openings in a low-k dielectric layer, the material removal of an underlying etch stop layer is decoupled from the etching through the low-k dielectric in that the reduction in thickness is substantially achieved during the resist removal. For this purpose, the resist plasma etch may correspondingly be controlled to obtain the desired target thickness of the etch stop layer, wherein fluorine may be provided from an external source and/or fluorine may be generated in a controlled manner from polymer layers deposited within the etch chamber.

摘要翻译： 在用于在低k电介质层中形成通孔开口和沟槽开口的蚀刻工艺中，下层蚀刻停止层的材料去除与通过低k电介质的蚀刻分离，因为厚度的减小在 抵抗力消除。 为此，可以相应地控制抗蚀剂等离子体蚀刻以获得蚀刻停止层的期望目标厚度，其中可以从外部源提供氟，和/或​​氟可以以受控的方式从沉积在 蚀刻室。

公开(公告)号：US20060172525A1

公开(公告)日：2006-08-03

申请号：US11199526

申请日：2005-08-08

申请人： Thomas Werner ,  Matthias Schaller ,  Massud Aminpur

发明人： Thomas Werner ,  Matthias Schaller ,  Massud Aminpur

IPC分类号： H01L21/467

CPC分类号： H01L21/31138 ,  H01L21/31116 ,  H01L21/76808 ,  H01L21/76834

摘要： In an etch process for forming via openings and trench openings in a low-k dielectric layer, the material removal of an underlying etch stop layer is decoupled from the etching through the low-k dielectric in that the reduction in thickness is substantially achieved during the resist removal. For this purpose, the resist plasma etch may correspondingly be controlled to obtain the desired target thickness of the etch stop layer, wherein fluorine may be provided from an external source and/or fluorine may be generated in a controlled manner from polymer layers deposited within the etch chamber.

摘要翻译： 在用于在低k电介质层中形成通孔开口和沟槽开口的蚀刻工艺中，下层蚀刻停止层的材料去除与通过低k电介质的蚀刻分离，因为厚度的减小在 抵抗力消除。 为此，可以相应地控制抗蚀剂等离子体蚀刻以获得蚀刻停止层的期望目标厚度，其中可以从外部源提供氟，和/或​​氟可以以受控的方式从沉积在 蚀刻室。

公开(公告)号：US07608912B2

公开(公告)日：2009-10-27

申请号：US11422659

申请日：2006-06-07

申请人： Kai Frohberg ,  Joerg Hohage ,  Thomas Werner

发明人： Kai Frohberg ,  Joerg Hohage ,  Thomas Werner

IPC分类号： H01L23/58

CPC分类号： H01L21/823807 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31155 ,  H01L21/3185 ,  H01L21/823864 ,  H01L29/7843

摘要： The present invention provides a technique for reducing stress or stress gradients in highly sensitive device regions, such as cache areas, while still providing high transistor performance in logic areas by correspondingly providing contact etch stop layers with compressive and tensile stress for P-channel transistors and N-channel transistors in these logic areas. Consequently, a reduced failure rate may be obtained.

摘要翻译： 本发明提供了一种降低高灵敏度器件区域（例如高速缓存区域）中的应力或应力梯度的技术，同时通过相应地为P沟道晶体管提供具有压缩和拉伸应力的接触蚀刻停止层，同时仍然在逻辑区域中提供高晶体管性能， 这些逻辑区域中的N沟道晶体管。 因此，可以获得降低的故障率。

公开(公告)号：US20070077773A1

公开(公告)日：2007-04-05

申请号：US11422659

申请日：2006-06-07

申请人： Kai Frohberg ,  Joerg Hohage ,  Thomas Werner

发明人： Kai Frohberg ,  Joerg Hohage ,  Thomas Werner

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/823807 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31155 ,  H01L21/3185 ,  H01L21/823864 ,  H01L29/7843

摘要： The present invention provides a technique for reducing stress or stress gradients in highly sensitive device regions, such as cache areas, while still providing high transistor performance in logic areas by correspondingly providing contact etch stop layers with compressive and tensile stress for P-channel transistors and N-channel transistors in these logic areas. Consequently, a reduced failure rate may be obtained.

摘要翻译： 本发明提供了一种降低高灵敏度器件区域（例如高速缓存区域）中的应力或应力梯度的技术，同时通过相应地为P沟道晶体管提供具有压缩和拉伸应力的接触蚀刻停止层，同时仍然在逻辑区域中提供高晶体管性能， 这些逻辑区域中的N沟道晶体管。 因此，可以获得降低的故障率。

公开(公告)号：US09822377B2

公开(公告)日：2017-11-21

申请号：US14113844

申请日：2012-04-27

申请人： Alexander Steinkasserer ,  Marcello Stein ,  Thomas Werner ,  Ilka Knippertz

发明人： Alexander Steinkasserer ,  Marcello Stein ,  Thomas Werner ,  Ilka Knippertz

IPC分类号： C12N15/85 ,  C12N15/86

CPC分类号： C12N15/85 ,  C12N15/86 ,  C12N2710/10041

摘要： The present invention provides a mutant CD83 promoter comprising the promoter/enhancer regions of human CD83 promoter and being dendritic cell-specific, and the use thereof, specifically for the treatment or prevention of diseases or medical conditions related to malignancy, autoimmunity or prevention of transplant rejections.

公开(公告)号：US09272732B2

公开(公告)日：2016-03-01

申请号：US14347822

申请日：2012-09-10

申请人： Roland Greul ,  Thomas Werner ,  Joerg Strecker

发明人： Roland Greul ,  Thomas Werner ,  Joerg Strecker

IPC分类号： B62D15/02 ,  B62D6/00

CPC分类号： B62D15/0225 ,  B62D6/008

摘要： A method for determining a rack force for a steering apparatus of a vehicle, in which the rack force is determined as a function of a steering angle variable which characterizes an actual wheel steering angle or a set point of the wheel steering angle. In order to specify a method for determining a rack force, with which a target steering torque can be generated such that a comfortable steering feel is imparted to the driver and the steering apparatus nevertheless gives the driver feedback that is as realistic as possible regarding the motion state of the vehicle, the method comprises: determining a variable which characterizes a lateral force on a shaft of the steering apparatus, and determining the rack force as a function of the lateral force, wherein the determination of the rack force comprises a filtering by means of a signal processing element having a proportional-differential transfer function.

摘要翻译： 一种用于确定车辆转向装置的齿条力的方法，其中机架力被确定为表征车轮转向角的实际车轮转向角或设定点的转向角变量的函数。 为了确定用于确定机架力的方法，通过该方法可以产生目标转向扭矩，使得向驾驶员和转向装置赋予舒适的转向感，然而给予驾驶员对于运动尽可能现实的反馈 该方法包括：确定表征转向装置的轴上的横向力的变量，以及确定作为横向力的函数的齿条力，其中机架力的确定包括通过装置的过滤 具有比例差分传递函数的信号处理元件。

公开(公告)号：US09174673B2

公开(公告)日：2015-11-03

申请号：US14116790

申请日：2012-07-16

申请人： Joerg Strecker ,  Thomas Werner

发明人： Joerg Strecker ,  Thomas Werner

IPC分类号： B62D11/00 ,  B62D55/02 ,  B62D6/04 ,  B62D6/00

CPC分类号： B62D6/04 ,  B62D6/008

摘要： A method for determining a steering rack force (FR) for a steering system of a vehicle, in which a first steering rack force (RFD) is ascertained as a function of at least one force that occurs in the steering system or at least one torque (tor_RA) that occurs in the steering system. So as to provide less strong feedback on the force conditions in the steering system for reasons of driving comfort, in particular when this is currently not required, it is proposed to ascertain a second steering rack force (RFC) as a function of at least one vehicle variable (v, ang_RA), which characterizes the state of movement of the vehicle, and to generate a resulting steering rack force (FR) based on the first steering rack force (RFD) and the second steering rack force (RFC).

摘要翻译： 一种用于确定用于车辆的转向系统的转向齿条力（FR）的方法，其中第一转向齿条力（RFD）被确定为在转向系统中发生的至少一个力的函数或至少一个扭矩 （tor_RA）发生在转向系统中。 为了提供驾驶舒适性的原因，对转向系统的力条件提供较少的强烈反馈，特别是当目前不需要时，建议确定第二转向架力（RFC）作为至少一个 车辆变量（v，ang_RA），其表征车辆的运动状态，并且基于第一转向齿条力（RFD）和第二转向齿条力（RFC）产生所产生的转向齿条力（FR）。