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1.发明授权Boride having chemical composition Na—Si—B, and polycrystalline reaction sintered product of boride and process for production thereof 有权具有化学成分Na-Si-B的硼化物和硼化物的多晶反应烧结体及其制造方法公开(公告)号：US09255010B2
公开(公告)日：2016-02-09
申请号：US13817646
申请日：2011-08-17
申请人： Haruhiko Morito , Hisanori Yamane
发明人： Haruhiko Morito , Hisanori Yamane
IPC分类号： C01B35/02 , C01B35/04 , C04B14/32 , C01D13/00 , C04B35/58 , C04B35/64 , C30B9/10 , C30B29/10
CPC分类号： C01B35/04 , C01D13/00 , C04B14/321 , C04B35/5805 , C04B35/64 , C04B2235/3201 , C04B2235/40 , C04B2235/422 , C04B2235/424 , C04B2235/428 , C04B2235/5436 , C04B2235/6584 , C04B2235/767 , C04B2235/77 , C04B2235/786 , C30B9/10 , C30B29/10
摘要： Provided are: a novel bonds useful as a highly-functional material; and a novel production method for a polycrystalline sintered product of a bonds, of which the energy cost is low, which does not require a sintering promoter, which enables the product to be worked into complicated forms and which enables a development to a polynary boride.Provided are a boride having a composition Na—Si—B, and a polycrystalline reaction-sintered product thereof. A mixed compact of boron and an element, M (M means Si and/or C) is heated along with metal sodium to give a polycrystalline reaction-sintered product.
摘要翻译： 提供：可用作高功能材料的新型键; 以及能量成本低，不需要烧结促进剂的键的多晶烧结体的新型制造方法，能够使产品加工成复杂的形式，能够显现多元硼化物。 提供具有组成Na-Si-B的硼化物及其多晶反应烧结产物。 硼和元素的混合物M（M表示Si和/或C）与金属钠一起加热，得到多晶反应烧结产品。
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2.发明申请BORIDE HAVING CHEMICAL COMPOSITION Na-Si-B, AND POLYCRYSTALLINE REACTION SINTERED PRODUCT OF BORIDE AND PROCESS FOR PRODUCTION THEREOF 有权具有化学成分的Na-Si-B和多晶反应烧结硼的产物及其生产方法公开(公告)号：US20130266499A1
公开(公告)日：2013-10-10
申请号：US13817646
申请日：2011-08-17
申请人： Haruhiko Morito , Hisanori Yamane
发明人： Haruhiko Morito , Hisanori Yamane
IPC分类号： C01B35/04
CPC分类号： C01B35/04 , C01D13/00 , C04B14/321 , C04B35/5805 , C04B35/64 , C04B2235/3201 , C04B2235/40 , C04B2235/422 , C04B2235/424 , C04B2235/428 , C04B2235/5436 , C04B2235/6584 , C04B2235/767 , C04B2235/77 , C04B2235/786 , C30B9/10 , C30B29/10
摘要： Provided are: a novel bonds useful as a highly-functional material; and a novel production method for a polycrystalline sintered product of a bonds, of which the energy cost is low, which does not require a sintering promoter, which enables the product to be worked into complicated forms and which enables a development to a polynary boride.Provided are a boride having a composition Na—Si—B, and a polycrystalline reaction-sintered product thereof. A mixed compact of boron and an element, M (M means Si and/or C) is heated along with metal sodium to give a polycrystalline reaction-sintered product.
摘要翻译： 提供：可用作高功能材料的新型键; 以及能量成本低，不需要烧结促进剂的键的多晶烧结体的新型制造方法，能够使产品加工成复杂的形式，能够显现多元硼化物。 提供具有组成Na-Si-B的硼化物及其多晶反应烧结产物。 硼和元素的混合物M（M表示Si和/或C）与金属钠一起加热，得到多晶反应烧结产品。
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3.发明申请PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED ON A GaN BULK CRYSTAL SUBSTRATE 审中-公开生产GaN体积晶体衬底和形成GaN大块晶体衬底的半导体器件公开(公告)号：US20140044970A1
公开(公告)日：2014-02-13
申请号：US14057690
申请日：2013-10-18
CPC分类号： C30B7/105 , C09K11/62 , C30B7/00 , C30B9/00 , C30B11/00 , C30B15/00 , C30B29/403 , C30B29/406 , H01L29/2003 , H01L29/7783 , Y10T117/1092 , Y10T117/1096 , Y10T428/2982
摘要： A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge.
摘要翻译： 晶体具有1cm或更大的直径，并且对应于带边缘，在360nm波长处的阴极发光光谱中显示出最强峰。
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4.发明授权Crystal growth method, crystal growth apparatus, group-III nitride crystal and group III nitride semiconductor device 有权晶体生长方法，晶体生长装置，III族氮化物晶体和III族氮化物半导体器件公开(公告)号：US08562737B2
公开(公告)日：2013-10-22
申请号：US12139230
申请日：2008-06-13
申请人： Seiji Sarayama , Masahiko Shimada , Hisanori Yamane , Masato Aoki
发明人： Seiji Sarayama , Masahiko Shimada , Hisanori Yamane , Masato Aoki
IPC分类号： C30B13/02
CPC分类号： C01B21/06 , C30B11/002 , C30B29/403 , C30B29/406
摘要： A crystal growth method, comprising the steps of: a) bringing a nitrogen material into a reaction vessel in which a mixed molten liquid comprising an alkaline metal and a group-III metal; and b) growing a crystal of a group-III nitride using the mixed molten liquid and the nitrogen material brought in by the step a) in the reaction vessel, wherein a provision is made such as to prevent a vapor of the alkaline metal from dispersing out of the reaction vessel.
摘要翻译： 一种晶体生长方法，包括以下步骤：a）将氮材料送入其中包含碱金属和III族金属的混合熔融液体的反应容器中; 以及b）使用混合的熔融液体和由步骤a）引入的氮材料在III族氮化物中生长晶体，其中设置如防止碱金属的蒸气分散 离开反应容器。
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公开(公告)号：US07261775B2
公开(公告)日：2007-08-28
申请号：US10765502
申请日：2004-01-28
IPC分类号： C30B11/04
CPC分类号： H01L29/7787 , C30B11/00 , C30B29/403 , C30B29/406 , H01L29/2003 , Y10T428/2982
摘要： A method of growing a group III nitride crystal grows a group III nitride crystal from a solution in which an alkaline metal, a group III metal and nitrogen are dissolved, and includes, in the solution, a material which increases solubility of the nitrogen into the solution.
摘要翻译： 生长III族氮化物晶体的方法从溶解有碱金属，III族金属和氮的溶液中生长III族氮化物晶体，并且在该溶液中包含增加氮的溶解度的材料 解。
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6.发明授权Production of a GaN bulk crystal substrate and a semiconductor device formed thereon 有权生产GaN体晶衬底及其上形成的半导体器件公开(公告)号：US08591647B2
公开(公告)日：2013-11-26
申请号：US12367013
申请日：2009-02-06
IPC分类号： H01L21/322
CPC分类号： C30B7/105 , C09K11/62 , C30B7/00 , C30B9/00 , C30B11/00 , C30B15/00 , C30B29/403 , C30B29/406 , H01L29/2003 , H01L29/7783 , Y10T117/1092 , Y10T117/1096 , Y10T428/2982
摘要： A method is provided for producing a single crystal body of a group III nitride, comprising the steps of forming a molten flux of a volatile metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenishing a compound containing N from a source outside the reaction vessel, and wherein a seed crystal is disposed in the reaction vessel.
摘要翻译： 提供一种用于制造III族氮化物的单晶体的方法，包括以下步骤：在反应容器中形成挥发性金属的熔融焊剂，并使来自熔融焊剂的GaN单晶生长，其中生长是 在从反应容器外部的源补充含有N的化合物的同时继续，并且其中在反应容器中设置晶种。
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公开(公告)号：US20130264482A1
公开(公告)日：2013-10-10
申请号：US13885026
申请日：2011-12-15
申请人： Hisanori Yamane , Tetsuya Kawano , Akira Yoshikawa , Takayuki Yanagida , Yui Yokota , Yutaka Fujimoto , Kentaro Fukuda , Noriaki Kawaguchi
发明人： Hisanori Yamane , Tetsuya Kawano , Akira Yoshikawa , Takayuki Yanagida , Yui Yokota , Yutaka Fujimoto , Kentaro Fukuda , Noriaki Kawaguchi
CPC分类号： C09K11/57 , C04B35/01 , C04B2235/3203 , C04B2235/3206 , C04B2235/3241 , C04B2235/3262 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3409 , C04B2235/658 , C04B2235/76 , C04B2235/77 , C09K11/63 , G01T3/06 , G21K4/00
摘要： Provided is a scintillator for neutrons that allows the detection of neutrons with superb sensitivity and that is little affected by background noise derived from γ-rays, and a neutron detector that uses the neutron scintillator.The scintillator for neutrons comprises borate that contains at least Mg and a divalent transition element.
摘要翻译： 提供了一种用于中子的闪烁体，其允许以极高的灵敏度检测中子，并且几乎不受来自伽马射线的背景噪声的影响，以及使用中子闪烁体的中子检测器。 用于中子的闪烁体包括含有至少Mg和二价过渡元素的硼酸盐。
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8.发明申请CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, GROUP-III NITRIDE CRYSTAL AND GROUP-III NITRIDE SEMICONDUCTOR DEVICE 有权晶体生长方法，晶体生长装置，III族氮化物晶体和III族氮化物半导体器件公开(公告)号：US20090120354A1
公开(公告)日：2009-05-14
申请号：US12353608
申请日：2009-01-14
申请人： Seiji Sarayama , Hisanori Yamane , Masahiko Shimada , Masafumi Kumano , Hirokazu Iwata , Takashi Araki
发明人： Seiji Sarayama , Hisanori Yamane , Masahiko Shimada , Masafumi Kumano , Hirokazu Iwata , Takashi Araki
IPC分类号： C30B19/06
CPC分类号： C30B29/403 , C30B9/00 , C30B11/00 , C30B29/406 , H01L33/007 , H01S5/32341 , Y10T117/10 , Y10T117/1012 , Y10T117/1024 , Y10T117/1052 , Y10T117/106
摘要： A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).
摘要翻译： III族氮化物晶体生长方法包括以下步骤：a）制备碱性材料和至少含有III族金属的物质的混合熔融液; b）从步骤a）中制备的混合熔融液体和至少含有氮的物质引起III族氮化物晶体的生长; 和c）产生可以将氮气引入到由步骤a）制备的熔融液体中的状态。
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9.发明授权Production of a GaN bulk crystal substrate and a semiconductor device formed thereon 有权生产GaN体晶衬底及其上形成的半导体器件公开(公告)号：US07508003B2
公开(公告)日：2009-03-24
申请号：US11408656
申请日：2006-04-20
IPC分类号： H01L27/15 , H01L29/167 , H01L33/00 , C01B21/06
CPC分类号： C30B7/105 , C09K11/62 , C30B7/00 , C30B9/00 , C30B11/00 , C30B15/00 , C30B29/403 , C30B29/406 , H01L29/2003 , H01L29/7783 , Y10T117/1092 , Y10T117/1096 , Y10T428/2982
摘要： A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge.
摘要翻译： 晶体具有1cm或更大的直径，并且对应于带边缘，在360nm波长处的阴极发光光谱中显示出最强峰。
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10.发明授权Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device 有权晶体生长方法，晶体生长装置，III族氮化物晶体和III族氮化物半导体器件公开(公告)号：US06949140B2
公开(公告)日：2005-09-27
申请号：US10308149
申请日：2002-12-03
CPC分类号： C30B29/403 , C30B9/00 , C30B11/00 , C30B29/406 , Y10T117/1092
摘要： A group-III nitride crystal growth method, comprising the steps of: a) preparing a mixed molten liquid of an alkaline metal and a material at least comprising a group-III metal; b) growing a group-III nitride crystal of the group-III metal and nitrogen from the mixed molten liquid and a material at least comprising nitrogen; and c) setting a predetermined crystal growth condition according to a zone defined by a pressure and a temperature in said step b).
摘要翻译： III族氮化物晶体生长方法，包括以下步骤：a）制备碱金属和至少包含III族金属的材料的混合熔融液; b）从混合的熔融液体中生长III族金属的III族氮化物晶体和至少包含氮的材料; 以及c）根据由所述步骤b）中的压力和温度限定的区域来设定预定的晶体生长条件。
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