公开(公告)号：US4311785A

公开(公告)日：1982-01-19

申请号：US179454

申请日：1980-08-19

申请人： Hellmut Ahne ,  Eberhard Kuhn ,  Roland Rubner ,  Erwin Schmidt

发明人： Hellmut Ahne ,  Eberhard Kuhn ,  Roland Rubner ,  Erwin Schmidt

IPC分类号： C08G73/00 ,  C08G73/10 ,  C08L79/04 ,  G03F7/004 ,  G03F7/038 ,  G03C1/70

CPC分类号： C08L79/04 ,  G03F7/0387 ,  Y10S430/107 ,  Y10S430/109

摘要： The invention relates to a method for the preparation of highly heat-resistant relief structures on the basis of polyimides, polyisoindoloquinazoline diones, polyoxazine diones and polyquinazoline diones by applying radiation-sensitive soluble polymer precursor stages to a substrate in the form of a film or a foil; irradiating the film or the foil through negative patterns with actinic light or by deflecting a light, electron or ion beam; removing the non-irradiated film or foil portions and optionally, by subsequent annealing; as well as the use of relief structures so prepared. It is an object of the invention to simplify the preparation of relief structures of the type mentioned. For this purpose, it is provided to use as the polymer precursor stages addition products of olefinically unsaturated monoepoxides to carboxyl group-containing polyaddition products of aromatic and/or heterocyclic tetracarboxylic acid dianhydrides and diamino compounds or diamino compounds with at least one orthoposition amido group or of aromatic and/or heterocyclic dihydroxy dicarboxylic acids or corresponding diamino dicarboxylic acids and diisocyanates. The relief structures prepared by the method according to the invention are suitable in particular for use as a resist, surface coating material and insulating material.

摘要翻译： 本发明涉及一种基于聚酰亚胺，多异吲哚喹唑啉二酮，多嗪二酮和聚喹唑啉二恶英制备高耐热浮雕结构的方法，其通过将辐射敏感的可溶性聚合物前体级施用于膜或 挫败; 通过具有光化光的负图案或通过偏转光，电子或离子束照射膜或箔; 去除未照射的薄膜或箔片部分，任选地通过随后的退火; 以及如此准备的救济结构的使用。 本发明的目的是简化上述类型的浮雕结构的制备。 为此目的，提供用作烯属不饱和单环氧化物与芳族和/或杂环四羧酸二酸酐和二氨基化合物或二氨基化合物的含羧基加聚产物的至少一个取代酰胺基的加成产物 的芳族和/或杂环二羟基二羧酸或相应的二氨基二羧酸和二异氰酸酯。 通过根据本发明的方法制备的浮雕结构特别适合用作抗蚀剂，表面涂层材料和绝缘材料。

公开(公告)号：US4332883A

公开(公告)日：1982-06-01

申请号：US179472

申请日：1980-08-19

申请人： Hellmut Ahne ,  Eberhard Kuhn ,  Roland Rubner ,  Erwin Schmidt

发明人： Hellmut Ahne ,  Eberhard Kuhn ,  Roland Rubner ,  Erwin Schmidt

IPC分类号： G03F7/20 ,  C08L79/04 ,  G03F7/038 ,  H01L21/027 ,  G03C5/00

CPC分类号： G03F7/0387 ,  C08L79/04

摘要： Disclosed herein is a method for the preparation of highly heat-resistant relief structures by applying radiation-sensitive soluble polymer precursor stages in the form of a layer or a foil to a substrate; irradiating the layer or foil through negative patterns with actinic light or by deflecting a light, electron or ion beam; removing the non-irradiated layer or foil portions and, optionally, subsequently annealing, as well as to the use of the relief structures made in this manner. An object of the invention is to broaden the supply of highly heat-resistant relief structures, and for this purpose it is provided to use precursor stages of polyoxazoles in the form of addition products of olefinically unsaturated monoepoxides on hydroxyl group-containing polycondensation products of aromatic and/or heterocyclic dihydroxy diamino compounds with dicarboxylic-acid chlorides or esters. The relief structures prepared by the method according to the invention are suitable particularly for use as resists, surface coating material and insulation material.

摘要翻译： 本文公开了一种通过将基于层或箔形式的辐射敏感的可溶性聚合物前体级施加到基底来制备高耐热浮雕结构的方法; 通过具有光化光的负图案或通过偏转光，电子或离子束照射层或箔; 去除未被照射的层或箔部分，并且任选地随后退火，以及使用以这种方式制成的浮雕结构。 本发明的一个目的是扩大高耐热浮雕结构的供应，为此目的是提供使用烯属不饱和单环氧化物加成产物形式的聚氧杂唑的前体阶段在芳族羟基的缩聚产物上 和/或杂环二羟基二氨基化合物与二羧酸氯化物或酯。 通过根据本发明的方法制备的浮雕结构特别适合用作抗蚀剂，表面涂层材料和绝缘材料。

公开(公告)号：US4329556A

公开(公告)日：1982-05-11

申请号：US148142

申请日：1980-05-09

申请人： Roland Rubner ,  Eberhard Kuhn ,  Hellmut Ahne

发明人： Roland Rubner ,  Eberhard Kuhn ,  Hellmut Ahne

IPC分类号： C08K5/00 ,  C07D207/44 ,  C07D207/452 ,  C07D207/456 ,  C08K5/41 ,  C08K5/43

CPC分类号： C07D207/452 ,  C08K5/43

摘要： The invention relates to new arylsulfonylazides as well as the use of these compounds. The new compounds are characterized by the general formula: ##STR1## where R=aryl; x=1 or 2; and R.sup.1 and R.sup.2 are selected from H, CH.sub.3 and Cl and may be the same or different, with the provision that CH.sub.3 and Cl are not present side by side. The compounds according to the invention are suitable as photoinitiators in the preparation of relief structures by phototechniques from olefinically unsaturated polymers, as well as cross-link enhancing agents in the radical-wise cross linking of thermoplastic polymers.

摘要翻译： 本发明涉及新的芳基磺酰基叠氮化物以及这些化合物的用途。 新化合物的特征在于通式：其中R =芳基; x = 1或2; 并且R 1和R 2选自H，CH 3和Cl并且可以相同或不同，条件是CH 3和Cl不并列存在。 根据本发明的化合物在通过光学技术从烯属不饱和聚合物制备浮雕结构中以及在热塑性聚合物的自由基交联中的交联增强剂中适合作为光引发剂。

公开(公告)号：US4397999A

公开(公告)日：1983-08-09

申请号：US179455

申请日：1980-08-19

申请人： Hellmut Ahne ,  Eberhard Kuhn ,  Roland Rubner

发明人： Hellmut Ahne ,  Eberhard Kuhn ,  Roland Rubner

IPC分类号： C08F299/00 ,  C08F290/00 ,  C08G73/00 ,  C08G73/02 ,  C08G73/06 ,  C08G73/18 ,  C08G73/20 ,  C09D171/00 ,  G03F7/038 ,  C08G69/48

CPC分类号： C08G73/18 ,  C08G73/20 ,  G03F7/0387 ,  Y10T428/31504 ,  Y10T428/31511 ,  Y10T428/31725

摘要： The present invention relates to oligomeric and/or polymeric precursor stages of polyimidazoles and polyimidazopyrrolones, as well as to a method for preparing these new precursor stages. The invention provides addition products of olefinically unsaturated monoepoxides on amino group-containing polycondensation products of aromatic and/or heterocyclic tetraamino compounds with dicarboxylic-acid chlorides or esters or on amino group-containing polyaddition products of the tetraamino compounds and tetracarboxylic-acid dianhydrides. The radiation-reactive precursor stages according to the invention are suited, for example, for the preparation of highly heat-resistant relief structures.

摘要翻译： 本发明涉及聚咪唑和聚咪唑吡咯啉酮的低聚和/或聚合前体阶段，以及制备这些新的前体级的方法。 本发明提供了芳族和/或杂环四氨基化合物与二羧酸氯化物或酯的氨基缩聚产物或四氨基化合物和四羧酸二酐的含氨基加成产物的烯属不饱和单环氧化物的加成产物。 根据本发明的辐射反应性前体级适用于例如制备高耐热浮雕结构。

公开(公告)号：US4395482A

公开(公告)日：1983-07-26

申请号：US372540

申请日：1982-04-28

申请人： Hellmut Ahne ,  Eberhard Kuhn ,  Roland Rubner

发明人： Hellmut Ahne ,  Eberhard Kuhn ,  Roland Rubner

IPC分类号： G03C1/72 ,  C08G73/00 ,  C08G73/06 ,  C08G73/22 ,  G03F7/022 ,  G03F7/023 ,  H01L21/302 ,  G03C5/00

CPC分类号： G03F7/0233

摘要： The invention relates to heat-resistant positive resists based upon precursor stages of highly heat-resistant polymers and light-sensitive diazoquinones, as well as to a method for preparing heat-resistant relief structures of such positive resists. The positive resists of the type mentioned are developed in such a manner that they are heat-resistant as well as have a long storage life and are easily processed. The invention provides for the use of oligomer and/or polymer precursor stages of polyoxazoles in the form of polycondensation products of aromatic and/or heterocyclic dihydroxydiamino compounds and dicarboxylic acid chlorides or esters. The positive resists according to the invention are suitable especially for applications in microelectronics.

摘要翻译： 本发明涉及基于高耐热聚合物和光敏重氮醌的前体阶段的耐热正性抗蚀剂，以及制备这种正性抗蚀剂的耐热浮雕结构的方法。 上述类型的正型抗蚀剂的开发方式使得它们具有耐热性并且具有长的储存寿命并且易于加工。 本发明提供了芳族和/或杂环二羟基二氨基化合物和二羧酸氯化物或酯的缩聚产物形式的聚恶唑的低聚物和/或聚合物前体段的用途。 根据本发明的正型抗蚀剂特别适用于微电子学领域。

公开(公告)号：US4292398A

公开(公告)日：1981-09-29

申请号：US148143

申请日：1980-05-09

申请人： Roland Rubner ,  Eberhard Kuhn ,  Hellmut Ahne

发明人： Roland Rubner ,  Eberhard Kuhn ,  Hellmut Ahne

IPC分类号： G03F7/038 ,  G03F7/008 ,  H01L21/027 ,  G03C5/00

CPC分类号： G03F7/008 ,  Y10S430/12

摘要： The invention relates to a method for making more efficient the preparation of relief structures by phototechniques from mixtures containing acrylate- and/or methacrylate-group-containing polymers and photo-initiators. For this purpose, the invention provides the use of aromatic azides free of maleinimide groups as photo-initiators. The method according to the invention is suitable particularly for the structurization by phototechniques of insulating materials as well as of semiconductor and conductor materials.

摘要翻译： 本发明涉及一种通过光学技术从含有含丙烯酸酯和/或甲基丙烯酸酯基的聚合物和光引发剂的混合物制备浮雕结构更有效的方法。 为此，本发明提供了不含马来酰亚胺基团的芳族叠氮基作为光引发剂的用途。 根据本发明的方法特别适用于通过绝缘材料以及半导体和导体材料的光电技术的结构化。

公开(公告)号：US4371685A

公开(公告)日：1983-02-01

申请号：US270637

申请日：1981-06-04

申请人： Hellmut Ahne ,  Eberhard Kuhn ,  Roland Rubner

发明人： Hellmut Ahne ,  Eberhard Kuhn ,  Roland Rubner

IPC分类号： C08F299/02 ,  C08F290/00 ,  C08G73/00 ,  C08G73/06 ,  C08G73/10 ,  C08G73/18 ,  C08G73/22 ,  C08L79/08 ,  G03F7/038 ,  G03C1/68

CPC分类号： C08L79/08 ,  C08G73/0633 ,  C08G73/0644 ,  C08G73/0672 ,  C08G73/0694 ,  G03F7/0387

摘要： The invention relates to oligomeric and/or polymeric radiation-reactive precursor stages of polymers on the basis of heterocycles and has the objective to make available radiation-reactive precursor stages of this kind in which the problems arising due to the need of using organic solvents are eliminated. For this purpose, the invention provides addition products of cyclic carboxylic-acid anhydrides with hydroxyl group-containing compounds, where the hydroxyl group-containing compounds represent addition products of olefinically unsaturated monoepoxides on carboxyl group-containing prepolymers of polyimides, polyisoindoloquinazoline diones, polyoxazine diones and polyquinazoline diones or on amino group-containing prepolymers of polyimidazoles and polyimidazopyrrolones or on hydroxyl group-containing prepolymers of polyoxazoles. The radiation-reactive precursor stages according to the invention are suited, for example, for the manufacture of highly heat-resistant relief structues.

摘要翻译： 本发明涉及基于杂环的聚合物的低聚和/或聚合物辐射反应性前体级，并且其目的是制备这种类型的辐射反应性前体级，其中由于需要使用有机溶剂引起的问题是 消除了 为此，本发明提供环状羧酸酐与含羟基化合物的添加产物，其中含羟基的化合物代表烯属不饱和单环氧化物在聚酰亚胺，聚多吲哚并喹唑啉二酮，聚恶嗪二酮的含羧基预聚物上的加成产物 和聚喹唑啉二酮或聚咪唑和聚咪唑吡咯啉酮的含氨基的预聚物或聚羟基的含羟基预聚物。 根据本发明的辐射反应性前体级适用于例如制造高耐热浮雕结构。

公开(公告)号：US4332882A

公开(公告)日：1982-06-01

申请号：US179463

申请日：1980-08-19

申请人： Hellmut Ahne ,  Eberhard Kuhn ,  Roland Rubner

发明人： Hellmut Ahne ,  Eberhard Kuhn ,  Roland Rubner

IPC分类号： G02F1/1337 ,  G03F7/038 ,  H01L21/027 ,  G03C5/00

CPC分类号： G03F7/0387

摘要： The present invention relates to a method for the preparation of highly heat-resistant relief structures by applying radiation-sensitive soluble polymer precursor stages in the form of a film or a foil to a substrate; irradiating the film or the foil through negative patterns with actinic light or by deflecting a light, electron or ion beam; removing the non-irradiated film or foil portions; and optionally, by subsequent annealing; as well as to the use of the relief structures made in this manner. It is provided for this purpose to use precursor stages of polyimidazoles and polyimidazopyrrolones in the form of addition products of olefinically unsaturated monoepoxides on amino group-containing polycondensation products of aromatic and/or heterocyclic tetraamino compounds with dicarboxylic-acid chlorides or esters, or on amino group-containing polyaddition products of the tetraamino compounds and tetracarboxylic-acid dianhydrides. The relief structures prepared by the method according to the invention are suited particularly for use as resists, surface coating material and insulating material.

摘要翻译： 本发明涉及通过将膜或箔形式的辐射敏感的可溶性聚合物前体级施加到基底来制备高耐热浮雕结构的方法; 通过具有光化光的负图案或通过偏转光，电子或离子束照射膜或箔; 去除未照射的膜或箔部分; 任选地，通过随后的退火; 以及使用以这种方式制造的救济结构。 为此目的，为了使芳族和/或杂环四氨基化合物与二羧酸氯化物或酯的氨基的缩合产物上的烯属不饱和单环氧化物的加成产物形式的聚咪唑和聚咪唑吡咯啉酮的前体段，或氨基 含四氨基化合物和四羧酸二酐的含有基团的加成产物。 通过根据本发明的方法制备的浮雕结构特别适合用作抗蚀剂，表面涂层材料和绝缘材料。

公开(公告)号：US4287294A

公开(公告)日：1981-09-01

申请号：US148129

申请日：1980-05-09

申请人： Roland Rubner ,  Eberhard Kuhn ,  Hellmut Ahne

发明人： Roland Rubner ,  Eberhard Kuhn ,  Hellmut Ahne

IPC分类号： C08F299/00 ,  C08F290/00 ,  G03F7/008 ,  H01L21/027 ,  G03C5/00

CPC分类号： G03F7/008 ,  Y10S430/12

摘要： The invention relates to a method for making more efficient the preparation of relief structures by phototechniques from mixtures containing olefinically unsaturated polymers and azides as photo initiators. For this purpose, the invention provides the use of aromatic azidomaleinimides as photo initiators. The method according to the invention is suitable particularly for the structuring by phototechniques of insulating materials as well as of semiconductor and conductor materials.

摘要翻译： 本发明涉及一种通过光学技术从包含烯属不饱和聚合物和叠氮化物作为光引发剂的混合物制备浮雕结构更有效的方法。 为此，本发明提供了芳族叠氮基亚胺作为光引发剂的用途。 根据本发明的方法特别适用于通过绝缘材料以及半导体和导体材料的光电技术的结构化。

公开(公告)号：US4398009A

公开(公告)日：1983-08-09

申请号：US179462

申请日：1980-08-19

申请人： Hellmut Ahne ,  Eberhard Kuhn ,  Roland Rubner

发明人： Hellmut Ahne ,  Eberhard Kuhn ,  Roland Rubner

IPC分类号： G02B6/44 ,  C07C67/00 ,  C07C231/00 ,  C07C231/02 ,  C07C231/12 ,  C07C233/35 ,  C07C233/43 ,  C07C233/75 ,  C07C233/78 ,  C08G69/26 ,  C08G69/32 ,  C08G73/00 ,  C08G73/02 ,  C08G73/22 ,  G03F7/027 ,  G03F7/038 ,  C08G65/40

CPC分类号： G03F7/0387 ,  C08G73/0233 ,  Y10T428/2933 ,  Y10T428/31511 ,  Y10T428/31725

摘要： The invention relates to oligomeric and/or polymeric precursor stages of polyoxazoles, as well as to a method for the preparation of these precursor stages. New radiation-reactive polymer precursor stages are provided comprised of addition products of olefinically unsaturated monoepoxides on hydroxyl group-containing polycondensation products of aromatic and/or heterocyclic dihydroxy diamino compounds with dicarboxylic-acid chlorides or esters. The radiation-reactive precursor stages according to the invention are suitable, for example, for the preparation of highly heat-resistant relief structures and as coatings for the optical fibers of light waveguides.

摘要翻译： 本发明涉及聚恶唑的低聚和/或聚合前体阶段，以及制备这些前体阶段的方法。 由芳族和/或杂环二羟基二氨基化合物与二羧酸氯化物或酯的含羟基缩聚产物上的烯属不饱和单环氧化物的加成产物提供了新的辐射反应性聚合物前体。 根据本发明的辐射反应性前体层适用于例如制备高耐热浮雕结构和作为光波导光纤的涂层。