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6 条记录 (耗时 0.016 秒)

    Electron-beam-sensitive resist material for microstructures in electronics
    2.
    发明授权
    Electron-beam-sensitive resist material for microstructures in electronics 失效
    电子束微结构的电子束敏感抗蚀剂材料

    公开(公告)号：US4837125A

    公开(公告)日：1989-06-06

    申请号：US17982

    申请日：1987-02-24

    申请人： Erwin Knapek ,  Helmut Formanek

    发明人： Erwin Knapek ,  Helmut Formanek

    IPC分类号： G03C1/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039

    CPC分类号： G03F7/039 ,  Y10S430/114 ,  Y10S430/126

    摘要： An electron-beam-sensitive resist material is provided that includes film having high-polymers and includes dopings. The material is made into a solution that is added to the substrate so that the resist material can be produced on the semiconductive or piezoelectric substrates by drying. The doping additives of the resist material can include: halogens, halogen compounds, peroxides, kaotropic salts and xanthates. The resist material is used for the production of electron-beam-written microstructures with high structural resolution and, in comparison to the known methods, eliminates the error-affected developing process.

    摘要翻译： 提供了一种电子束敏感的抗蚀剂材料，其包括具有高聚合物的膜并且包括掺杂物。 将该材料制成添加到基底中的溶液，使得抗蚀剂材料可以通过干燥在半导体或压电基底上产生。 抗蚀剂材料的掺杂添加剂可以包括：卤素，卤素化合物，过氧化物，高岭土盐和黄原酸盐。 抗蚀剂材料用于生产具有高结构分辨率的电子束书写微结构，并且与已知方法相比，消除了错误影响的显影过程。

    Conductive clearing frame for a semiconductor component
    3.
    发明授权
    Conductive clearing frame for a semiconductor component 失效
    用于半导体元件的导电清除框架

    公开(公告)号：US5260599A

    公开(公告)日：1993-11-09

    申请号：US611732

    申请日：1990-11-13

    申请人： Frederik Ponse ,  Gabrielle Belle ,  Erwin Knapek

    发明人： Frederik Ponse ,  Gabrielle Belle ,  Erwin Knapek

    IPC分类号： H01L21/304 ,  H01L23/544 ,  H01L27/02

    CPC分类号： H01L23/544 ,  H01L21/304 ,  H01L2223/5442 ,  H01L2924/0002

    摘要： A clearing frame for a semiconductor component is provided to enable a sufficient positioning of a particle beam. The clearing frame has a higher electrical conductivity than the environment thereof. The clearing frame also enables the determination of the layer resistance of the implantation via the high-frequency loss resistance measurement free from contact and destruction. The clearing frame can be placed at a fixed external DC potential, for example source or drain potential and therefore side gating effects can be avoided.

    摘要翻译： 提供了一种用于半导体部件的清除框架，以便能够对粒子束进行充分的定位。 清灰框具有比其环境更高的导电性。 清除框架还能够通过高频损耗电阻测量来确定植入层的电阻，不受接触和破坏。 清除框架可以放置在固定的外部直流电位，例如源极或漏极电位，因此可以避免侧面门控效应。

    Method and apparatus for localizing weak points within an electrical circuit
    4.
    发明授权
    Method and apparatus for localizing weak points within an electrical circuit 失效
    用于定位电路内的弱点的方法和装置

    公开(公告)号：US4640626A

    公开(公告)日：1987-02-03

    申请号：US757445

    申请日：1985-07-22

    申请人： Ralf Schmid ,  Johann Otto ,  Daniela Bernklau ,  Erwin Knapek

    发明人： Ralf Schmid ,  Johann Otto ,  Daniela Bernklau ,  Erwin Knapek

    IPC分类号： G01N25/72 ,  G01Q30/02 ,  G01Q30/10 ,  G01R31/308 ,  G01R31/00

    CPC分类号： G01R31/308

    摘要： A method and apparatus localize weak points within an electrical circuit. The electrical circuit is covered with a liquid crystal and is heated to a temperature just below the clearing point of the liquid crystal. The liquid crystal converts into its unordered condition given a temperature increase and leakage channel within the integrated circuit are completely localized. By irradiating a three-dimensional region, at least one current is induced in the region by generating electron-hole pairs within the electrical circuit, this at least one current causing a temperature increase at at least one weak point of the electrical circuit.

    摘要翻译： 一种方法和装置将电路内的弱点定位。 电路用液晶覆盖，并被加热到刚好低于液晶的清除点的温度。 鉴于温度升高，液晶转换为无序状态，集成电路内的泄漏通道完全定位。 通过照射三维区域，通过在电路内产生电子 - 空穴对，在该区域中感应至少一个电流，该至少一个电流在电路的至少一个弱点处引起温度升高。

    Magnetic lens arrangement for corpuscular radiation equipment working under a vacuum
    6.
    发明授权
    Magnetic lens arrangement for corpuscular radiation equipment working under a vacuum 失效
    用于在真空下工作的红外辐射设备的磁性透镜装置

    公开(公告)号：US4209701A

    公开(公告)日：1980-06-24

    申请号：US891894

    申请日：1978-03-30

    申请人： Isolde Dietrich ,  Fred Fox ,  Erwin Knapek ,  Karl Nachtrieb ,  Reinhard Weyl ,  Helmut Zerbst ,  Guy LeFranc

    发明人： Isolde Dietrich ,  Fred Fox ,  Erwin Knapek ,  Karl Nachtrieb ,  Reinhard Weyl ,  Helmut Zerbst ,  Guy LeFranc

    IPC分类号： H01J37/141 ,  H01J37/26 ,  H01J37/00

    CPC分类号： H01J37/1416 ,  Y10S505/871

    摘要： A magnetic lens arrangement for corpuscular radiation equipment working under a vacuum, in particular an objective lens for high voltage electron microscopes, which permits having objects to be examined disposed in a vacuum chamber at room temperature, is achieved by an arrangement which includes a vacuum chamber having a lens coil winding, a superconductive shielding device which is of cup-shaped design and encloses the winding, two superconductive shielding cylinders disposed one behind the other with mutual spacing enclosed by the winding, with a vacuum chamber for the object to be examined disposed in front of the open side of the shielding device and the first shielding cylinder.

    摘要翻译： 一种用于在真空下工作的微粒辐射设备的磁性透镜装置，特别是用于高压电子显微镜的物镜，其允许在室温下设置在真空室中的物体被检查，其包括真空室 具有透镜线圈绕组，具有杯形设计并且围绕绕组的超导屏蔽装置，两个超导屏蔽圆筒彼此隔开布置，相互间隔由绕组包围，并设置用于待检测物体的真空室 在屏蔽装置的开口侧和第一屏蔽筒之前。