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    Storage device with slider with sacrificial lapping extension
    2.
    发明申请
    Storage device with slider with sacrificial lapping extension 失效
    带有牺牲研磨延伸的滑块的存储设备

    公开(公告)号：US20080007872A1

    公开(公告)日：2008-01-10

    申请号：US11901748

    申请日：2007-09-19

    申请人： Richard Bunch ,  Jeffrey Lille ,  Huey-Ming Tzeng

    发明人： Richard Bunch ,  Jeffrey Lille ,  Huey-Ming Tzeng

    IPC分类号： G11B5/60

    CPC分类号： G11B5/6005 ,  B24B37/048 ,  G11B5/3106 ,  G11B5/314 ,  G11B5/3163 ,  G11B5/3166 ,  G11B5/3169 ,  G11B5/3173 ,  G11B5/6082 ,  Y10T29/49037

    摘要： A process for fabricating sliders with one or more sacrificial structures (extensions) that facilitate lapping to create the air-bearing surface (ABS) is described. Prior to separating individual sliders from a wafer, a mask outlines a sacrificial extension around portions of the magnetic transducer elements that are nearest the predetermined plane which will become the ABS. The sacrificial extension extends below the predetermined ABS plane. When the sliders are individually separated by DRIE, the shape of the mask including the sacrificial extension is projected down into and along the slider body. In one embodiment, a channel is disposed on the side of the slider opposite the ABS to provide space for the sacrificial extension of the adjacent slider and allow the sliders to be spaced closer together on the wafer surface for more efficient use of the wafer during head fabrication.

    摘要翻译： 描述了一种用于制造具有一个或多个牺牲结构（延伸部分）的滑块的方法，其便于研磨以产生空气轴承表面（ABS）。 在将各个滑块与晶片分开之前，掩模围绕最靠近将成为ABS的预定平面的磁换能器元件周围的牺牲延伸。 牺牲延伸部延伸到预定的ABS平面以下。 当滑块由DRIE单独分开时，包括牺牲延伸部分的面罩的形状向下突出并沿着滑块体。 在一个实施例中，通道设置在与ABS相对的滑块的侧面上，以为相邻滑块的牺牲延伸提供空间，并允许滑块在晶片表面上更靠近在一起，以在头部期间更有效地使用晶片 制造。

    Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure
    5.
    发明申请
    Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure 失效
    具有叠层纵向偏置层结构的三端磁传感器

    公开(公告)号：US20060152859A1

    公开(公告)日：2006-07-13

    申请号：US11032598

    申请日：2005-01-10

    申请人： Jeffrey Childress ,  Robert Fontana ,  Jeffrey Lille

    发明人： Jeffrey Childress ,  Robert Fontana ,  Jeffrey Lille

    IPC分类号： G11B5/33 ,  G11B5/127 ,  G11B5/147 ,  H01L29/82 ,  H01L43/00

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  H01L29/66984 ,  H01L43/08

    摘要： A three terminal magnetic sensor (TTM) suitable for use in a magnetic head has a base region, a collector region, and an emitter region. A first barrier layer is located between the emitter region and the base region, and a second barrier layer is located between the collector region and the base region. An air bearing surface (ABS) sensing plane of the TTM is defined along sides of the base region, the collector region, and the emitter region. The base region includes a free layer structure, a pinned layer structure, a first non-magnetic spacer layer formed between the free layer structure and the pinned layer structure, an in-stack longitudinal biasing layer (LBL) structure which magnetically biases the free layer structure, and a second non-magnetic spacer layer formed between the free layer structure and the in-stack longitudinal biasing layer structure. In one variation, the layers in the base region are inverted. The TTM may comprise a spin valve transistor (SVT), a magnetic tunnel transistor (MTT), or a double junction structure.

    摘要翻译： 适用于磁头的三端磁传感器（TTM）具有基极区域，集电极区域和发射极区域。 第一阻挡层位于发射极区域和基极区域之间，第二阻挡层位于集电极区域和基极区域之间。 TTM的空气轴承表面（ABS）感测平面沿着基极区域，集电极区域和发射极区域的侧面被限定。 基极区域包括自由层结构，钉扎层结构，形成在自由层结构和被钉扎层结构之间的第一非磁性间隔层，叠层纵向偏置层（LBL）结构，其磁性地偏置自由层 结构，以及形成在自由层结构和叠层间纵向偏置层结构之间的第二非磁性间隔层。 在一个变型中，基区中的层被倒置。 TTM可以包括自旋阀晶体管（SVT），磁隧道晶体管（MTT）或双结结构。

    Three terminal magnetic sensor for magnetic heads with a semiconductor junction and process for producing same
    7.
    发明申请
    Three terminal magnetic sensor for magnetic heads with a semiconductor junction and process for producing same 失效
    具有半导体结的磁头的三端磁传感器及其制造方法

    公开(公告)号：US20060023370A1

    公开(公告)日：2006-02-02

    申请号：US10902995

    申请日：2004-07-30

    申请人： Jeffrey Lille

    发明人： Jeffrey Lille

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/06 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044

    摘要： The TTM sensor includes a semiconductor structure and a spin valve structure, where the semiconductor structure includes at least two layers. Two of the three leads of the TTM sensor are engaged to the semiconductor layers, where a semiconductor junction between the layers is disposed between the two leads. Generally, the junction may comprise a P-N junction between a P-type layer and an N-type layer and in an embodiment of the present invention the collector lead is engaged to the P-type semiconductor layer and the base lead is connected to the N-type semiconductor layer. The spin valve structure is fabricated upon the semiconductor structure and the emitter is engaged to the spin valve structure. In this configuration, a free magnetic layer of the spin valve structure is fabricated upon the semiconductor material, such that a schottky barrier is formed between the metallic free magnetic layer material and the semiconductor material.

    摘要翻译： TTM传感器包括半导体结构和自旋阀结构，其中半导体结构包括至少两层。 TTM传感器的三个引线中的两个接合到半导体层，其中层之间的半导体结被设置在两个引线之间。 通常，结可以包括P型层和N型层之间的PN结，并且在本发明的实施例中，集电极引线接合到P型半导体层，并且基极连接到N型层 型半导体层。 自旋阀结构被制造在半导体结构上，并且发射极接合到自旋阀结构。 在该结构中，在半导体材料上制造自旋阀结构的自由磁性层，使得在金属自由磁性层材料和半导体材料之间形成肖特基势垒。

    Methods of forming an electrical connection in a magnetic head using a damascene process
    8.
    发明申请
    Methods of forming an electrical connection in a magnetic head using a damascene process 失效
    使用镶嵌工艺在磁头中形成电连接的方法

    公开(公告)号：US20050047013A1

    公开(公告)日：2005-03-03

    申请号：US10651532

    申请日：2003-08-29

    申请人： Quang Le ,  Jeffrey Lille

    发明人： Quang Le ,  Jeffrey Lille

    IPC分类号： G11B5/127 ,  G11B5/147

    CPC分类号： G11B5/127 ,  Y10T29/49021 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49071

    摘要： In one illustrative example disclosed, a method for use in making a magnetic head involves forming a thermal-assist heater for the magnetic head; forming a plurality of coil layers of a write coil using a damascene process; and simultaneously forming an electrical connection to the thermal-assist heater in the same damascene process used to form the write coil. Advantageously, fabrication steps are reduced using a parallel process that provides for relatively small dimensions and reduces the possibility of electrical shorting. The method may be alternatively used to form an electrical connection to any other suitable electrical device for the magnetic head, such as an electrical lapping guide (ELG) or other component.

    摘要翻译： 在所公开的一个说明性示例中，用于制造磁头的方法包括形成用于磁头的热辅助加热器; 使用镶嵌工艺形成写入线圈的多个线圈层; 并且在用于形成写入线圈的相同的镶嵌工艺中同时形成与热辅助加热器的电连接。 有利的是，使用提供相对小的尺寸并减少电短路的可能性的并行工艺来减少制造步骤。 该方法可以替代地用于形成用于磁头的任何其它合适的电气装置的电连接，例如电研磨引导件（ELG）或其它部件。

    Storage device slider with sacrificial lapping extension
    9.
    发明申请
    Storage device slider with sacrificial lapping extension 审中-公开
    存储设备滑块与牺牲研磨延伸

    公开(公告)号：US20050030669A1

    公开(公告)日：2005-02-10

    申请号：US10938236

    申请日：2004-09-10

    申请人： Richard Bunch ,  Jeffrey Lille ,  Huey-Ming Tzeng

    发明人： Richard Bunch ,  Jeffrey Lille ,  Huey-Ming Tzeng

    IPC分类号： B24B37/04 ,  G11B5/10 ,  G11B5/31 ,  G11B5/60 ,  G11B21/21

    CPC分类号： G11B5/6005 ,  B24B37/048 ,  G11B5/3106 ,  G11B5/314 ,  G11B5/3163 ,  G11B5/3166 ,  G11B5/3169 ,  G11B5/3173 ,  G11B5/6082 ,  Y10T29/49037

    摘要： A process for fabricating sliders with one or more sacrificial structures (extensions) that facilitate lapping to create the air-bearing surface (ABS) is described. Prior to separating individual sliders from a wafer, a mask of material that is not removable by deep reactive ion etching (DRIE) is patterned on the surface of the sliders. The mask outlines a sacrificial extension around portions of the magnetic transducer elements that are nearest the predetermined plane which will become the ABS. The sacrificial extension makes the surface of the slider which will be lapped non-planar. The sacrificial extension extends below the predetermined ABS plane. When the sliders are individually separated by DRIE, the shape of the mask including the sacrificial extension is projected down into and along the slider body.

    摘要翻译： 描述了一种用于制造具有一个或多个牺牲结构（延伸部分）的滑块的方法，其便于研磨以产生空气轴承表面（ABS）。 在将单独的滑块与晶片分离之前，通过深度反应离子蚀刻（DRIE）不可移除的材料掩模被图案化在滑块的表面上。 掩模围绕最接近将成为ABS的预定平面的磁换能器元件周围的牺牲延伸。 牺牲延伸使得滑块的表面将被非平面研磨。 牺牲延伸部延伸到预定的ABS平面以下。 当滑块由DRIE单独分开时，包括牺牲延伸部分的面罩的形状向下突出并沿着滑块体。

    Magnetic head having thermally assisted write head with encapsulated heater element, and method of fabrication thereof
    10.
    发明申请
    Magnetic head having thermally assisted write head with encapsulated heater element, and method of fabrication thereof 失效
    具有具有封装加热元件的热​​辅助写头的磁头及其制造方法

    公开(公告)号：US20050024774A1

    公开(公告)日：2005-02-03

    申请号：US10631885

    申请日：2003-07-30

    申请人： Robert Fontana ,  Jeffrey Lille

    发明人： Robert Fontana ,  Jeffrey Lille

    IPC分类号： G11B5/127

    CPC分类号： G11B5/127 ,  Y10T29/49032 ,  Y10T29/49082 ,  Y10T29/49083

    摘要： A magnetic head including a media heating device. Following the fabrication of the heating device, a sacrificial layer of material is deposited to protect the heating device during subsequent process steps. Thereafter, write head components, such as write head induction coils and/or a P1 pole pedestal are fabricated above the heating device, and the sacrificial layer is substantially consumed in protecting the heating device during the aggressive etching and milling steps used to create those components. Further components, including a second magnetic pole are thereafter fabricated to complete the fabrication of the write head portion of the magnetic head. The sacrificial layer may be comprised of alumina, or a material such as NiFe that can act as a seed layer for a subsequent head components such as the P1 pole pedestal.

    摘要翻译： 一种包括介质加热装置的磁头。 在加热装置的制造之后，沉积牺牲层材料以在随后的工艺步骤中保护加热装置。 此后，在加热装置之上制造诸如写头感应线圈和/或P1极基座的写头部件，并且在用于产生这些部件的腐蚀性蚀刻和铣削步骤期间，牺牲层基本上被消耗以保护加热装置 。 此后，制造包括第二磁极的其它部件以完成磁头的写入头部的制造。 牺牲层可以由氧化铝或诸如NiFe的材料组成，其可以用作后续头部部件如P1极基座的种子层。