公开(公告)号：US09852792B2

公开(公告)日：2017-12-26

申请号：US14764135

申请日：2013-01-31

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Naveen Muralimanohar ,  Han Bin Yoon ,  Norman Paul Jouppi

IPC: G11C11/34 ,  G11C13/00 ,  G11C16/26 ,  G06F12/02 ,  G11C11/56 ,  G11C16/10

CPC classification number: G11C13/0061 ,  G06F12/0246 ,  G11C11/5628 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C16/10 ,  G11C16/26 ,  G11C2207/2272 ,  Y02D10/13

Abstract: A non-volatile multi-level cell (“MLC”) memory device is disclosed. The memory device has an array of non-volatile memory cells, an array of non-volatile memory cells, with each non-volatile memory cell storing multiple groups of bits. A row buffer in the memory device has multiple buffer portions, each buffer portion storing one or more bits from the memory cells and having different read and write latencies and energies.

公开(公告)号：US20150364191A1

公开(公告)日：2015-12-17

申请号：US14764135

申请日：2013-01-31

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Naveen Muralimanohar ,  Han Bin Yoon ,  Norman Paul Jouppi

IPC: G11C13/00

CPC classification number: G11C13/0061 ,  G06F12/0246 ,  G11C11/5628 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C16/10 ,  G11C16/26 ,  G11C2207/2272 ,  Y02D10/13

Abstract: A non-volatile multi-level cell (“MLC”) memory device is disclosed. The memory device has an array of non-volatile memory cells, an array of non-volatile memory cells, with each non-volatile memory cell storing multiple groups of bits. A row buffer in the memory device has multiple buffer portions, each buffer portion storing one or more bits from the memory cells and having different read and write latencies and energies.

Abstract translation: 公开了一种非易失性多级单元（“MLC”）存储器件。 存储器件具有非易失性存储器单元阵列，非易失性存储器单元阵列，每个非易失性存储器单元存储多组位。 存储器件中的行缓冲器具有多个缓冲器部分，每个缓冲器部分存储来自存储器单元的一个或多个位，并且具有不同的读取和写入延迟和能量。