摘要:
A mixed cleaning solvent containing dichlorotrifluoroethane and dimethoxymethane without containing Flon #113, which is suitable for cleaning and degreasing printed circuit boards and for eliminating flux residues and dust particles adhering thereon and which reveals high cleaning ability without occurrence of whity specks of volatilization residues including ionic residues on the treated surface with possible attainment of high stability to decomposition of the solvent component.
摘要:
A workpiece mounting table (20) for an electric discharge machine, which machines a workpiece (12) by discharging electricity between an electrode and the workpiece (12) in an interior of a work tank (6) and removing a surface of the workpiece (12), includes a surface-plate mounting table (3) made of a conductive material and arranged at the bottom of the work tank (6), a plurality of insulating materials (2), each of which has a flat shape and is arranged and fixed on the surface-plate mounting table (3) with a gap (4) between the insulating materials (2) to constitute an insulating flat plate (30), and a surface plate (1) made of a metal material, fixed on the insulating flat plate (30) and insulated from the surface-plate mounting table (3) by the insulating flat plate (30), for fixing thereon the workpiece (12).
摘要:
A fuel cell system includes a fuel cell stack, a gas liquid separator, a first drain channel, and a second drain channel. The gas liquid separator is connected to a fuel gas discharge passage of the fuel cell stack through a fuel gas discharge channel. The first drain channel is connected to the fuel gas discharge passage separately from the fuel gas discharge channel, and connected to the gas liquid separator through a valve unit. The second drain channel chiefly discharges liquid droplets from the gas liquid separator.
摘要:
There is provided a coolant manifold that is installed to a fuel cell stack so as to distribute coolant through the fuel cell stack, which is constituted by stacking a plurality of unit cells and has more than one communication holes for coolant supply and at least one communication hole for coolant discharge, in which the coolant flows in an order from the communication holes for coolant supply through a plurality of the unit cells to the communication hole for coolant discharge. The coolant manifold includes a manifold body having a manifold chamber that extends along an alignment direction of the communication holes for coolant supply, and an external communication part having an external communication hole for communicating the manifold chamber with external. A center axis of the external communication hole is placed unparallel and non-vertical relative to a center axis of each communication hole for coolant supply.
摘要:
A fuel cell stack having stacked unit fuel cells, each having a pair of separators between which a membrane electrode assembly is provided, which includes an anode and a cathode. Each separator has protruding lines arranged vertically in a zigzag manner, which protrude in a direction going away from the membrane electrode assembly. A space between the anode and the protruding lines of the separator facing the anode is used as a fuel gas passage. A space between the cathode and the protruding lines of the separator facing the cathode is used as an oxidant gas passage. At least part of the separators are each arranged in close contact with another separator so that a coolant passage through which a coolant flows horizontally is formed between both separators. A lower area of the coolant passage has a larger flow resistance than that of an upper area thereof.
摘要:
A silicide film is formed between a ferroelectric capacitor structure, which is formed by sandwiching a ferroelectric film between a lower electrode and an upper electrode, and a conductive plug (the conductive material constituting the plug is tungsten (W) for example). Here, an example is shown in which a base film of the conductive plug is the silicide film.
摘要:
In a semiconductor device manufacturing method having the etching step of an electrode material film constituting a capacitor using ferroelectric substance or high- dielectric substance, etching of a conductive film that acts as an electrode of the capacitor formed over a semiconductor substrate is carried out in an atmosphere containing bromine, and a heating temperature of the semiconductor substrate is set in a range of 300° C. to 600° C., otherwise etching of at least the conductive film is carried out in an atmosphere to which only hydrogen bromide and oxygen are supplied from an outside.
摘要:
The present invention relates to a solvent composition for removing radioactive substance, characterized by comprising at least one selected from hydrofluorocarbon, hydrofluoroether, and perfluoroketone as a medium for transporting the radioactive substance, and a method for removing a radioactive substance characterized by using the solvent composition for removing.
摘要:
A side plate of a casing includes bracket members and a surface member. Each of the bracket members includes three second coupling portions and a plate-shaped attachment portion provided integrally with the second coupling portions. A coupling pin is inserted into the second coupling portions. The surface member is joined to the plate-shaped attachment portion. The bracket member includes a step fitted to an end of the surface member. The plate-shaped attachment portion and the surface member are jointed at a spot welding section including spots in a zigzag pattern.
摘要:
An Al2O3 film with a thickness greater than that of a wiring is formed as a protective film, and then the Al2O3 film is polished by CMP until a conductive barrier film is exposed. Namely, CMP is applied to the Al2O3 film by utilizing the conductive barrier film as a stopper film. Next, a silicon oxide film is formed over the entire surface by, for example, a high-density plasma method, and then the surface thereof is flattened. Subsequently, another Al2O3 film is formed on the silicon oxide film as a protective film for preventing intrusion of hydrogen or moisture. Further, another silicon oxide film is formed on the Al2O3 film, for example, by a high-density plasma method. Then, a via hole reaching the conductive barrier film is formed through the silicon oxide film, the Al2O3 film and the silicon oxide film, and then a W plug is embedded therein.
摘要翻译:形成厚度大于布线的Al 2 O 3膜作为保护膜,然后通过CMP对Al 2 O 3膜进行抛光直至导电阻挡膜露出。 即,通过利用导电阻挡膜作为阻挡膜将CMP施加到Al 2 O 3膜上。 接下来,通过例如高密度等离子体法在整个表面上形成氧化硅膜,然后将其表面变平。 随后,在氧化硅膜上形成另一种Al 2 O 3膜作为防止氢或水分侵入的保护膜。 此外,例如通过高密度等离子体法在Al 2 O 3膜上形成另一氧化硅膜。 然后,通过氧化硅膜,Al 2 O 3膜和氧化硅膜形成到达导电阻挡膜的通孔,然后埋入W插头。